SMD 6A TRANSISTOR Search Results

Contextual Info: Transistors IC SMD Type Product specification FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50

MARKING SMD PNP TRANSISTOR 2a

Abstract: MARKING SMD pnp TRANSISTOR 790 vce 24 icm 1a SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR TRANSISTOR SMD 1a 9 TRANSISTOR SMD PNP 1A FCX790A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

MARKING SMD npn TRANSISTOR 1a

Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Transistors IC SMD Type Product specification FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.

Contextual Info: Transistors IC SMD Type Product specification FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.

Contextual Info: Transistors IC SMD Type Product specification FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 45 V Collector-emitter voltage

smd marking 619

Abstract: npn smd 2a transistor smd 6a MARKING SMD npn TRANSISTOR 1a FCX619 transistor marking 6A 6a smd transistor
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.

KZT2955

Abstract: CZT2955
Contextual Info: Transistors IC SMD Type 2.0W Surface Mount Complementary PNP Silicon Power Transistor KZT2955 CZT2955 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A).

CZT3055

Abstract: 30ma 40v npn KZT3055
Contextual Info: Transistors IC SMD Type 2.0W Surface Mount Complementary NPN Silicon Power Transistor KZT3055 CZT3055 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A).

smd transistor 718

Abstract: MARKING SMD PNP TRANSISTOR 718 MARKING SMD PNP TRANSISTOR 2a FCX718 transistor smd 6a 6a smd transistor MARKING SMD PNP TRANSISTOR smd 6a transistor
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.

BC817 cdil

Abstract: BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B

BC817

Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

BC817

Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E

DNS04S0A0S06PFD

Abstract: T491D107M016AS
Contextual Info: FEATURES High efficiency: 94% @ 5.0Vin, 3.3V/6A out Small size and low profile: SMD 27.9x 11.4x 7.1mm (1.10”x 0.45”x 0.28”) Surface mount packaging Standard footprint Voltage and resistor-based trim Pre-bias startup Output voltage tracking No minimum load required

DNS04S0A0R06P

Abstract: Tantalum Capacitor kemet 10 uF
Contextual Info: FEATURES High efficiency: 94% @ 5.0Vin, 3.3V/6A out Small size and low profile: SMD 27.9x 11.4x 7.1mm (1.10”x 0.45”x 0.28”) Surface mount packaging Standard footprint Voltage and resistor-based trim Pre-bias startup Output voltage tracking No minimum load required

Contextual Info: FEATURES High efficiency: 89.5%@ 12Vin, 3.3V/6A out Small size and low profile: SMD 27.90x 11.4x 7.1mm (1.10” x 0.45” x 0.28”) Surface mount packaging Standard footprint Voltage and resistor-based trim Pre-bias startup Output Voltage tracking No minimum load required

SMD 8A TRANSISTOR

Abstract: smd transistor 8A transistor SMD 8A diode 60V 8A 2SJ302
Contextual Info: MOSFET SMD Type Mos Field Effect Power Transistor 2SJ302 TO-263 +0.1 1.27-0.1 RDS on 0.24 (VGS=-4V,ID=-6A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss Ciss=1200PF TYP. 5.60 (VGS=-10V,ID=-8A) +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 RDS(on) 0.1 +0.2 8.7-0.2

Contextual Info: FEATURES High efficiency: 89.5%@ 12Vin, 3.3V/6A out Small size and low profile: SMD 27.9x 11.4x 7.1mm (1.10” x 0.45” x 0.28”) Surface mount packaging Standard footprint Voltage and resistor-based trim Pre-bias startup Output Voltage tracking No minimum load required

DNS12S0A

Abstract: DNS12S0A0S06PFA DNS12S0A0S06 ps2 CIRCUIT power diagram ps2 CIRCUIT diagram
Contextual Info: FEATURES High efficiency: 89.5%@ 12Vin, 3.3V/6A out Small size and low profile: SMD 27.9x 11.4x 7.1mm (1.10” x 0.45” x 0.28”) Surface mount packaging Standard footprint Voltage and resistor-based trim Pre-bias startup Output Voltage tracking No minimum load required

DNS04S0A0S06

Abstract: DNS04S0A0R06P
Contextual Info: FEATURES Š High efficiency: 94% @ 5.0Vin, 3.3V/6A out Š Small size and low profile: SMD 27.9x 11.4x 7.1mm (1.10”x 0.45”x 0.28”) Š Surface mount packaging Š Standard footprint Š Voltage and resistor-based trim Š Pre-bias startup Š Output voltage tracking

fan 6224

Abstract: DNS04S0A0S06PFD T491D107M016AS
Contextual Info: FEATURES Š High efficiency: 94% @ 5.0Vin, 3.3V/6A out Š Small size and low profile: SMD 27.9x 11.4x 7.1mm (1.10”x 0.45”x 0.28”) Š Surface mount packaging Š Standard footprint Š Voltage and resistor-based trim Š Pre-bias startup Š Output voltage tracking

Contextual Info: FEATURES Š High efficiency: 89.5%@ 12Vin, 3.3V/6A out Š Small size and low profile: SMD 27.90x 11.4x 7.1mm (1.10” x 0.45” x 0.28”) Š Surface mount packaging Š Standard footprint Š Voltage and resistor-based trim Š Pre-bias startup Š Output Voltage tracking

fan 6224

Contextual Info: FEATURES Š High efficiency: 89.5%@ 12Vin, 3.3V/6A out Š Small size and low profile: SMD 27.90x 11.4x 7.1mm (1.10” x 0.45” x 0.28”) Š Surface mount packaging Š Standard footprint Š Voltage and resistor-based trim Š Pre-bias startup Š Output Voltage tracking