SMD 8A TRANSISTOR Search Results

SMD 8A TRANSISTOR

Abstract: smd transistor 8A transistor SMD 8A 2SK3484
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3484 TO-252 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.5 V, ID = 8A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 148m Low Ciss: Ciss = 900 pF TYP. Unit: mm +0.1 2.30-0.1 0.127 max +0.25 2.65-0.1 MAX. (VGS = 10 V, ID = 8A)

MARKING SMD PNP TRANSISTOR 2a

Abstract: SMD 8A TRANSISTOR SMD TRANSISTOR MARKING 2A TRANSISTOR SMD PNP 1A SMD BR TRANSISTOR SMD 1a 9 MARKING SMD PNP TRANSISTOR 1a MARKING SMD PNP TRANSISTOR FCX789A smd ic marking 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: Transistors IC SMD Type Product specification FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD 8A TRANSISTOR

Abstract: smd transistor 8A transistor SMD 8A diode 60V 8A 2SJ302
Contextual Info: MOSFET SMD Type Mos Field Effect Power Transistor 2SJ302 TO-263 +0.1 1.27-0.1 RDS on 0.24 (VGS=-4V,ID=-6A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss Ciss=1200PF TYP. 5.60 (VGS=-10V,ID=-8A) +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 RDS(on) 0.1 +0.2 8.7-0.2

SMD 8A TRANSISTOR

Abstract: transistor SMD 8A smd transistor 8A FDB4020P KDB4020P
Contextual Info: MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P FDB4020P TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on).

T0252

Abstract: SMD making code 2f ITS08F06 ITS08F06B ITS08F06G ITS08F06H
Contextual Info: ITS08F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R Advance Information S upersedes February 1998 version, DS4711 -2 .4 The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

1455

Abstract: BCU83
Contextual Info: BCU83–SMD MECHANICAL DATA Dimensions in mm NPN EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .0 2 .5 1 .5 4 .2 5 m a x . 1 .6 0 .4 0 0 .4 0 Ideal for high current driver applications requiring low loss devices FEATURES • LOW VCE SAT • HIGH CURRENT 0 .5 0

2SC4523

Abstract: 8A400
Contextual Info: Transistors SMD Type High-Speed Switching Applications 2SC4523 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max

MARKING SMD PNP TRANSISTOR 2a

Abstract: MARKING SMD PNP TRANSISTOR SMD BR 12 FCX717 SMD 8A TRANSISTOR
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX717 Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE sat 77mÙ at 3A.

Contextual Info: BSO4804 Preliminary data OptiMOS
=Small-Signal-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) 150°C operating temperature  Avalanche rated  dv/dt rated Ideal for fast switching applications

Contextual Info: Transistors IC SMD Type Product specification FCX717 Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE sat 77mÙ at 3A.

smd transistor 8A sot23

Abstract: SMD 8A TRANSISTOR SOT-23 marking 717 FMMT717 SMD BR 17
Contextual Info: Transistors IC SMD Type Switching Transistor FMMT717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 IC up to 10A peak pulse current. 1 0.55 IC CONT 2.5A. +0.1 1.3-0.1 +0.1 2.4-0.1 625mW power dissipation. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Excellent hfe characteristics up to 10A pulsed .

S4097

Abstract: BSO4804 smd 67A switching smd code "67A"
Contextual Info: BSO4804 Preliminary data OptiMOS
=Small-Signal-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) 150°C operating temperature  Avalanche rated  dv/dt rated Ideal for fast switching applications

smd 67A switching

Abstract: smd diode 67A S4097 TRANSISTOR SMD MARKING CODE 7A BSO4804 67a smd smd code 67a
Contextual Info: BSO4804 OptiMOS
=Small-Signal-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) 150°C operating temperature  Avalanche rated  dv/dt rated Ideal for fast switching applications

smd diode code T7

Contextual Info: ITH08F06 ITH08F06 High Speed Powerline N-Channel IGBT DS4988-3.0 May 1999 The ITH08F06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage applications such as power supplies and

Schottky diode TO220 15A 1000V

Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
Contextual Info: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series

IPM04S0A0S10

Abstract: IPM12S0A0S08
Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection

Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection

IPM04S0A0S10

Abstract: 509K
Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection

IPM12S0A0R08FA

Abstract: s08f
Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection

Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection

IPM12S0A0R08FA

Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection

Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/6A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection

ILA03N60

Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
Contextual Info: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET