697 SMD
Abstract: No abstract text available
Text: SCOPE: MICROPROCESSOR SUPERVISORY CIRCUITS Device Type 01 02 Generic Number MAX696 x /883B MAX697(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 Case Outline Package Code MAXIM SMD
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MAX696
/883B
MAX697
/883B
Mil-Std-1835
GDIP1-T16
CDIP2-T16
CQCC1-N20
Mil-Std-883:
697 SMD
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697 SMD
Abstract: 5962-9312501MEA CQCC1-N20 GDIP1-T16 MAX696 MAX697
Text: SCOPE: MICROPROCESSOR SUPERVISORY CIRCUITS Device Type 01 02 Generic Number MAX696 x /883B MAX697(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Case Outline Package Code Outline Letter Mil-Std-1835 MAXIM SMD
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MAX696
/883B
MAX697
Mil-Std-1835
Mil-Std-1835
GDIP1-T16
CDIP2-T16
CQCC1-N20
Mil-Std-883:
697 SMD
5962-9312501MEA
CQCC1-N20
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ed12 smd diode
Abstract: smd parts nomenclature tutorial ed13 smd diode ed28 smd diode ed19 smd diode 1-Aug-2008 EA7 SMD Code
Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661
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SMJ320C6701SP
SGUS030C
89MeV-cm2/mg
SMJ320C6701
32-Bit
C6201
MIL-PRF-38535
ed12 smd diode
smd parts nomenclature tutorial
ed13 smd diode
ed28 smd diode
ed19 smd diode
1-Aug-2008
EA7 SMD Code
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ed15 smd diode
Abstract: ed28 smd diode ed31 smd diode ed22 smd diode
Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661
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SMJ320C6701SP
SGUS030C
89MeV-cm2/mg
SMJ320C6701
32-Bit
C6201
MIL-PRF-38535
ed15 smd diode
ed28 smd diode
ed31 smd diode
ed22 smd diode
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DIODE SMD t4
Abstract: No abstract text available
Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661
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SMJ320C6701SP
SGUS030C
89MeV-cm2/mg
SMJ320C6701
32-Bit
C6201
MIL-PRF-38535
DIODE SMD t4
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ed18 smd diode
Abstract: ed15 smd diode ed22 smd diode ED31 smd ed12 smd diode
Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661
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SMJ320C6701SP
SGUS030C
89MeV-cm2/mg
SMJ320C6701
32-Bit
C6201
MIL-PRF-38535
ed18 smd diode
ed15 smd diode
ed22 smd diode
ED31 smd
ed12 smd diode
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ed15 smd diode
Abstract: smd code EA2 MCBG004
Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661
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SMJ320C6701SP
SGUS030C
89MeV-cm2/mg
SMJ320C6701
32-Bit
C6201
MIL-PRF-38535
ed15 smd diode
smd code EA2
MCBG004
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MAX690
Abstract: 5962-9071102M2C 5962-9071202M2C SMD 5 PIN CODE F10 59629071102m2c 5962-9071202MPA 5962-9071201M2C
Text: SCOPE: MICROPROCESSOR SUPERVISORY CIRCUITS Device Type 01 02 03 04 05 06 Generic Number MAX690 x /883B MAX691(x)/883B MAX692(x)/883B MAX693(x)/883B MAX694(x)/883B MAX695(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:
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MAX690
/883B
MAX691
MAX692
MAX693
MAX694
5962-9071102M2C
5962-9071202M2C
SMD 5 PIN CODE F10
59629071102m2c
5962-9071202MPA
5962-9071201M2C
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MAX690
Abstract: 5962-9071101M2C 5962-9071102M2C MAX690MJA 5962-9071202M2C 5962-9071201MPA 5962-9071203MPA transistor SMD t08 transistor t08 smd MAX691
Text: SCOPE: MICROPROCESSOR SUPERVISORY CIRCUITS Device Type 01 02 03 04 05 06 Generic Number MAX690 x /883B MAX691(x)/883B MAX692(x)/883B MAX693(x)/883B MAX694(x)/883B MAX695(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:
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MAX690
/883B
MAX691
MAX692
MAX693
MAX694
5962-9071101M2C
5962-9071102M2C
MAX690MJA
5962-9071202M2C
5962-9071201MPA
5962-9071203MPA
transistor SMD t08
transistor t08 smd
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sub70n03
Abstract: L6919C L6919CD L6919CDTR smd diode S4 6A
Text: L6919C 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT
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L6919C
200kHz
SO-28
sub70n03
L6919C
L6919CD
L6919CDTR
smd diode S4 6A
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800V 40A mosfet
Abstract: rubycon CDF sub70n03 CDF-AEC-Q100-002 L6919E L6919ED L6919EDTR ls 07
Text: L6919E 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT
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L6919E
200kHz
SO-28
800V 40A mosfet
rubycon CDF
sub70n03
CDF-AEC-Q100-002
L6919E
L6919ED
L6919EDTR
ls 07
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sub70n03
Abstract: CDF-AEC-Q100-002 L6919E L6919ETR
Text: L6919E 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT
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L6919E
200kHz
SO-28
sub70n03
CDF-AEC-Q100-002
L6919E
L6919ETR
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smd diode S4 65a
Abstract: No abstract text available
Text: L6919E 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT
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L6919E
200kHz
SO-28
SO-28
L6919E
L6919ETR
E-L6919ETR
smd diode S4 65a
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BS9075
Abstract: rubycon CDF FB10S MOSFET 800V 3A n1 sot23 SMD code E2 sub70n03 CDF-AEC-Q100-002 L6919E L6919ETR
Text: L6919E 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE
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L6919E
200kHz
SO-28
BS9075
rubycon CDF
FB10S
MOSFET 800V 3A
n1 sot23
SMD code E2
sub70n03
CDF-AEC-Q100-002
L6919E
L6919ETR
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transistor 228
Abstract: SMD Transistors code complementary npn-pnp smd transistor sot Surface mount NPN/PNP complementary transistor TRANSISTOR SMD CODE 15 smd transistor 5 lead smd 5 lead transistor dual transistor sot npn-pnp-transistors
Text: PRODUCT announcement New SOT-228 Surface Mount Dual Transistors CYTA44D CYT5551D CYT5551HCD 8 7 6 5 1 2 3 4 CYTA4494D 8 7 6 5 1 2 3 4 Dual, Isolated Complementary Transistors Dual, Isolated NPN Transistors features • Dual Transistors in the new SOT-228 eight 8 lead
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OT-228
CYTA4494D
CYTA44D
CYT5551D
CYT5551HCD
OT-223
CYTA44D,
CYTA4494D,
CYT5551D,
transistor 228
SMD Transistors code
complementary npn-pnp
smd transistor sot
Surface mount NPN/PNP complementary transistor
TRANSISTOR SMD CODE 15
smd transistor 5 lead
smd 5 lead transistor
dual transistor sot
npn-pnp-transistors
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ag 20 taiyo
Abstract: Infineon Technologies transistor 4 ghz omnivision BGS12AL7-4 C166 GaAs SPDT
Text: BGS12AL7-4 SPDT RF Switch Data Sheet Revision 1.3, 2009-06-24 Preliminary Industrial & Multimarket Edition 2009-06-24 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGS12AL7-4
ag 20 taiyo
Infineon Technologies transistor 4 ghz
omnivision
BGS12AL7-4
C166
GaAs SPDT
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Untitled
Abstract: No abstract text available
Text: BGS12AL7-4 SPDT RF Switch Data Sheet Revision 1.3, 2009-06-24 Preliminary Industrial & Multimarket Edition 2009-06-24 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGS12AL7-4
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Untitled
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
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SMD MARKING CODE f2
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
SMD MARKING CODE f2
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Untitled
Abstract: No abstract text available
Text: SRAM AS8S512K32 A ustin S em iconductor, Inc._ 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • • 68 Lead CQFP (Q) SMD 5962-94611 MIL-STD-883 j o —l m m ' T L n | i > o z : | ( > o | y M 3 r ' ' . c o c n 2 ' - )
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OCR Scan
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AS8S512K32
MIL-STD-883
12Kx32
S8S512K32
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30N60
Abstract: No abstract text available
Text: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
IXGH3QN60BU1
IXGH30N6QBU1S
30N60
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Untitled
Abstract: No abstract text available
Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C
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OCR Scan
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12N100U1
12N100AU1
O-247
IXGH12N100U1
IXGH12N100AU1
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Untitled
Abstract: No abstract text available
Text: O IX Y S Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS VCES = 600 V C = Collector, TAB = Collector Short Circuit SOA Capability Symbol Test Conditions VCES ^ v CGR Maximum Ratings = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MO 600 V v GES
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IXSH50N60B
IXSH50N60BS
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60024 apex
Abstract: 5962-9162101HXX qml-38535 QML-38534 5962-XXXXXZZ MIL-H-38534 MIC-M-38510
Text: DESC PORM 193 SEP 87 D IS T R IB U T IO N S T A T E M E N T A. . u 5 A p p r o v e d l o r p u b l i c r e l e a s e ; d i s t r i b u t i o n i& u n lim it e d •I clDD47Gfl 0D5b32fl bfl3 ■ OfHCt t W — 596Z-E273 G O V I R N M I K T PR IN T IN G 7 4 * . 1 3 9 /4 0 » ! |
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596Z-E273
RD047DA
005b3Efl
QML-38534.
5962-9162101HXX
pa83m/883
TQ0M70Ã
60024 apex
qml-38535
QML-38534
5962-XXXXXZZ
MIL-H-38534
MIC-M-38510
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