SMD CEV Search Results
SMD CEV Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLM15PX601BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 600ohm POWRTRN |
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BLE32SN120SH1L | Murata Manufacturing Co Ltd | FB SMD 1210inch 12ohm POWRTRN |
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BLM21HE601BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm POWRTRN |
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BLM15PX471BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 470ohm POWRTRN |
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BLM15PX601SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 600ohm POWRTRN |
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SMD CEV Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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697 SMDContextual Info: SCOPE: MICROPROCESSOR SUPERVISORY CIRCUITS Device Type 01 02 Generic Number MAX696 x /883B MAX697(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 Case Outline Package Code MAXIM SMD |
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MAX696 /883B MAX697 /883B Mil-Std-1835 GDIP1-T16 CDIP2-T16 CQCC1-N20 Mil-Std-883: 697 SMD | |
697 SMD
Abstract: 5962-9312501MEA CQCC1-N20 GDIP1-T16 MAX696 MAX697
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MAX696 /883B MAX697 Mil-Std-1835 Mil-Std-1835 GDIP1-T16 CDIP2-T16 CQCC1-N20 Mil-Std-883: 697 SMD 5962-9312501MEA CQCC1-N20 | |
ed12 smd diode
Abstract: smd parts nomenclature tutorial ed13 smd diode ed28 smd diode ed19 smd diode 1-Aug-2008 EA7 SMD Code
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SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 ed12 smd diode smd parts nomenclature tutorial ed13 smd diode ed28 smd diode ed19 smd diode 1-Aug-2008 EA7 SMD Code | |
ed15 smd diode
Abstract: ed28 smd diode ed31 smd diode ed22 smd diode
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SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 ed15 smd diode ed28 smd diode ed31 smd diode ed22 smd diode | |
DIODE SMD t4Contextual Info: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661 |
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SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 DIODE SMD t4 | |
ed18 smd diode
Abstract: ed15 smd diode ed22 smd diode ED31 smd ed12 smd diode
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SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 ed18 smd diode ed15 smd diode ed22 smd diode ED31 smd ed12 smd diode | |
ed15 smd diode
Abstract: smd code EA2 MCBG004
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SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 ed15 smd diode smd code EA2 MCBG004 | |
Contextual Info: SRAM AS8S512K32 A ustin S em iconductor, Inc._ 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • • 68 Lead CQFP (Q) SMD 5962-94611 MIL-STD-883 j o —l m m ' T L n | i > o z : | ( > o | y M 3 r ' ' . c o c n 2 ' - ) |
OCR Scan |
AS8S512K32 MIL-STD-883 12Kx32 S8S512K32 | |
30N60Contextual Info: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO |
OCR Scan |
IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) IXGH3QN60BU1 IXGH30N6QBU1S 30N60 | |
Contextual Info: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C |
OCR Scan |
12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1 | |
MAX690
Abstract: 5962-9071102M2C 5962-9071202M2C SMD 5 PIN CODE F10 59629071102m2c 5962-9071202MPA 5962-9071201M2C
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MAX690 /883B MAX691 MAX692 MAX693 MAX694 5962-9071102M2C 5962-9071202M2C SMD 5 PIN CODE F10 59629071102m2c 5962-9071202MPA 5962-9071201M2C | |
MAX690
Abstract: 5962-9071101M2C 5962-9071102M2C MAX690MJA 5962-9071202M2C 5962-9071201MPA 5962-9071203MPA transistor SMD t08 transistor t08 smd MAX691
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MAX690 /883B MAX691 MAX692 MAX693 MAX694 5962-9071101M2C 5962-9071102M2C MAX690MJA 5962-9071202M2C 5962-9071201MPA 5962-9071203MPA transistor SMD t08 transistor t08 smd | |
sub70n03
Abstract: L6919C L6919CD L6919CDTR smd diode S4 6A
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L6919C 200kHz SO-28 sub70n03 L6919C L6919CD L6919CDTR smd diode S4 6A | |
800V 40A mosfet
Abstract: rubycon CDF sub70n03 CDF-AEC-Q100-002 L6919E L6919ED L6919EDTR ls 07
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L6919E 200kHz SO-28 800V 40A mosfet rubycon CDF sub70n03 CDF-AEC-Q100-002 L6919E L6919ED L6919EDTR ls 07 | |
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smd diode S4 65aContextual Info: L6919E 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT |
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L6919E 200kHz SO-28 SO-28 L6919E L6919ETR E-L6919ETR smd diode S4 65a | |
BS9075
Abstract: rubycon CDF FB10S MOSFET 800V 3A n1 sot23 SMD code E2 sub70n03 CDF-AEC-Q100-002 L6919E L6919ETR
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L6919E 200kHz SO-28 BS9075 rubycon CDF FB10S MOSFET 800V 3A n1 sot23 SMD code E2 sub70n03 CDF-AEC-Q100-002 L6919E L6919ETR | |
Contextual Info: L6919E 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE |
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L6919E 200kHz SO-28 L6919ETR | |
Contextual Info: O IX Y S Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS VCES = 600 V C = Collector, TAB = Collector Short Circuit SOA Capability Symbol Test Conditions VCES ^ v CGR Maximum Ratings = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MO 600 V v GES |
OCR Scan |
IXSH50N60B IXSH50N60BS | |
transistor 228
Abstract: SMD Transistors code complementary npn-pnp smd transistor sot Surface mount NPN/PNP complementary transistor TRANSISTOR SMD CODE 15 smd transistor 5 lead smd 5 lead transistor dual transistor sot npn-pnp-transistors
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OT-228 CYTA4494D CYTA44D CYT5551D CYT5551HCD OT-223 CYTA44D, CYTA4494D, CYT5551D, transistor 228 SMD Transistors code complementary npn-pnp smd transistor sot Surface mount NPN/PNP complementary transistor TRANSISTOR SMD CODE 15 smd transistor 5 lead smd 5 lead transistor dual transistor sot npn-pnp-transistors | |
ag 20 taiyo
Abstract: Infineon Technologies transistor 4 ghz omnivision BGS12AL7-4 C166 GaAs SPDT
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BGS12AL7-4 ag 20 taiyo Infineon Technologies transistor 4 ghz omnivision BGS12AL7-4 C166 GaAs SPDT | |
Contextual Info: BGS12AL7-4 SPDT RF Switch Data Sheet Revision 1.3, 2009-06-24 Preliminary Industrial & Multimarket Edition 2009-06-24 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or |
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BGS12AL7-4 | |
Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
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BGA231N7 | |
SMD MARKING CODE f2Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
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BGA231N7 SMD MARKING CODE f2 | |
60024 apex
Abstract: 5962-9162101HXX qml-38535 QML-38534 5962-XXXXXZZ MIL-H-38534 MIC-M-38510
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OCR Scan |
596Z-E273 RD047DA 005b3Efl QML-38534. 5962-9162101HXX pa83m/883 TQ0M70Ã 60024 apex qml-38535 QML-38534 5962-XXXXXZZ MIL-H-38534 MIC-M-38510 |