14335
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for
|
Original
|
PDF
|
TSML1000/1020/1030/1040
TSML10
TSML1000
TSML1020
TSML1030
TSML1040
D-74025
14335
|
TSML1000
Abstract: TSML1020 TSML1030 TSML1040
Text: TSML1000/1020/1030/1040 Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package Description TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for
|
Original
|
PDF
|
TSML1000/1020/1030/1040
TSML10
TSML1000
TSML1020
TSML1030
TSML1040
D-74025
TSML1000
TSML1020
TSML1030
TSML1040
|
encoder 9985
Abstract: 9985 angular encoder 9985 encoder S 1040 smd TSML1000 TSML1020 TSML1030 TSML1040 9985, encoder
Text: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for
|
Original
|
PDF
|
TSML1000/1020/1030/1040
TSML1000
TSML10
TSML1020
TSML1030
TSML1040
D-74025
28-Nov-00
encoder 9985
9985 angular encoder
9985 encoder
S 1040 smd
TSML1000
TSML1020
TSML1030
TSML1040
9985, encoder
|
Untitled
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for
|
Original
|
PDF
|
TSML1000/1020/1030/1040
TSML1000
TSML10
TSML1020
TSML1030
TSML1040
D-74025
08-Mar-01
|
LBAS516T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523 SC79 SMD plastic package. LBAS516T1G S-LBAS516T1G FEATURES • Ultra small plastic SMD package
|
Original
|
PDF
|
LBAS516T1
OD523
LBAS516T1G
S-LBAS516T1G
OD-523
AEC-Q101
LBAS516T1G
|
Untitled
Abstract: No abstract text available
Text: TSMF1000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSMF1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
PDF
|
TSMF1000
TSMF1000
D-74025
09-Sept-99
|
Untitled
Abstract: No abstract text available
Text: TSMF2000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSMF2000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
PDF
|
TSMF2000
TSMF2000
D-74025
17-Feb-00
|
TSMF1000
Abstract: No abstract text available
Text: TSMF1000 Vishay Telefunken High Speed IR Emitting Diode in ø SMD Package Description TSMF1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
PDF
|
TSMF1000
TSMF1000
D-74025
31-Mar-00
|
Untitled
Abstract: No abstract text available
Text: TSMF2000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSMF2000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
PDF
|
TSMF2000
TSMF2000
D-74025
09-Sept-99
|
Untitled
Abstract: No abstract text available
Text: TSMF1000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSMF1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
PDF
|
TSMF1000
TSMF1000
D-74025
17-Feb-00
|
Untitled
Abstract: No abstract text available
Text: TSML1000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSML1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
PDF
|
TSML1000
TSML1000
D-74025
17-Jan-00
|
Untitled
Abstract: No abstract text available
Text: TSML1000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSML1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
PDF
|
TSML1000
TSML1000
D-74025
09-Sept-99
|
TP-100
Abstract: TSML1000
Text: TSML1000 Vishay Telefunken Extented Power IR Emitting Diode in ø SMD Package Description TSML1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 %
|
Original
|
PDF
|
TSML1000
TSML1000
D-74025
31-Mar-00
TP-100
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology,and encapsulated LBAS516T1G in the SOD523 SC79 SMD plastic package. 1 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
|
Original
|
PDF
|
LBAS516T1
LBAS516T1G
OD523
OD-523
LBAS516T3G
|
|
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
|
Original
|
PDF
|
LBAS516T1G
LBAS516T1
OD523
OD-523
LBAS516T3G
|
BAS116H
Abstract: No abstract text available
Text: BAS116H 75 V, low leakage diode in small SOD123F package Rev. 01 — 11 April 2005 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features • Small and flat lead SMD plastic package
|
Original
|
PDF
|
BAS116H
OD123F
BAS116H
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
|
Original
|
PDF
|
LBAS516T1G
LBAS516T1
OD523
OD523
SC-79
LBAS516T
|
BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
|
Original
|
PDF
|
BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
|
BAS116H
Abstract: No abstract text available
Text: BAS116H 75 V, low leakage diode in small SOD123F package Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features Small and flat lead SMD plastic package
|
Original
|
PDF
|
BAS116H
OD123F
BAS116H
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed diode PMBD6050 PINNING FEATURES DESCRIPTION • Small plastic SMD package The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package.
|
OCR Scan
|
PDF
|
PMBD6050
PMBD6050
BD6050
MBG44S
SD6050
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors High-speed diode BAS32L FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD
|
OCR Scan
|
PDF
|
BAS32L
BAS32L
OD80C
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification H igh-speed diode B A S 16W FEATURES DESCRIPTION • Very small plastic SMD package The BAS16W is a high-speed switching diode fabricated in planar technology, and encapsulated in the very small plastic SMD SOT323
|
OCR Scan
|
PDF
|
BAS16W
OT323
BAS16W
MQA862
|
P5D SMD
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PMBD914 High-speed diode FEATURES DESCRIPTION • Small plastic SMD package The PMBD914 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package. • High switching speed: max. 4 ns
|
OCR Scan
|
PDF
|
PMBD914
PMBD914
BD914
P5D SMD
|
Untitled
Abstract: No abstract text available
Text: P h ilips Sem iconductors Product specification High-speed diode BAL99 FEATURES DESCRIPTION • Small plastic SMD package The BAL99 is a high-speed switching diode fabrjcaiedin planar technology, and encapsulated in the small plastic SMD SOT23 package. • High switching speed: max. 4 ns
|
OCR Scan
|
PDF
|
BAL99
BAL99
MBG446
|
