smd diode code B2
Abstract: diode marking b2 CDBER00340 SMD marking b2 DIODE SMD CODE MARKING 35
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER00340 RoHs Device Io = 30 mA V R = 40 Volts Features 0503(1308) Designed for mounting on small surface. 0.053(1.35) 0.045(1.15) Extremely thin package. Low stored charge. Majority carrier conduction.
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CDBER00340
MIL-STD-750
ER/0503
QW-A1088
smd diode code B2
diode marking b2
CDBER00340
SMD marking b2
DIODE SMD CODE MARKING 35
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BAS21H
Abstract: MARKING JSp
Text: BAS21H Single high-voltage switching diode Rev. 02 — 3 November Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device SMD plastic package.
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BAS21H
OD123F
BAS21H
MARKING JSp
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Untitled
Abstract: No abstract text available
Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Hyper Orange Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.
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AA3535SEL1Z1S-AMT
2000pcs
EIAJED4701/100
150mA
DSAL4014
MAR/22/2012
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smd Marking OU
Abstract: B05S-G B05S smd marking NE B10S B10SG
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)
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B05S-G
B10S-G
O269AA
125grams.
QW-BBR01
smd Marking OU
B05S
smd marking NE
B10S
B10SG
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smd diode code B2
Abstract: SMD diode B2 CDBER00340-HF Device marking code 1m diode diode marking b2 smd diode code b2 smd 1m SMD diode SMD marking b2 SMD MARKING CODE B2 diode marking b2
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER00340-HF RoHS Device Io = 30 mA V R = 40 Volts Features 0503(1308) Halogen free. 0.053(1.35) 0.045(1.15) Designed for mounting on small surface. Extremely thin package. Low stored charge. 0.034(0.85)
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CDBER00340-HF
MIL-STD-750
ER/0503
QW-G1001
smd diode code B2
SMD diode B2
CDBER00340-HF
Device marking code 1m diode
diode marking b2 smd
diode code b2 smd
1m SMD diode
SMD marking b2
SMD MARKING CODE B2
diode marking b2
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SOD123F footprint
Abstract: data sheet for all smd components smd diode code B2 SOD123F DIODE Sp marking code single power diode package SMD Packages BAS21H philips package information
Text: BAS21H Single high-voltage switching diode in small SOD123F package Rev. 01 — 11 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead SMD plastic package.
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BAS21H
OD123F
OD123F
SOD123F footprint
data sheet for all smd components
smd diode code B2
SOD123F
DIODE Sp marking code
single power diode package
SMD Packages
BAS21H
philips package information
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Untitled
Abstract: No abstract text available
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. -Ideal for printed circuit board. 0.031 0.80 0.019 (0.50)
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B05S-G
B10S-G
125grams.
QW-BBR01
82MIN
032MIN
55REF
100REF
92MIN
036MIN
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QW-G1106
Abstract: smd diode code B2 diode marking b2 SMD Schottky Barrier Diode 0402 SMD MARKING CODE B2
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR00340-HF RoHS Device Io = 30 mA V R = 40 Volts Features 0402(1005) Halogen free. 0.041(1.05) 0.037(0.95) Designed for mounting on small surface. Extremely thin package. 0.026(0.65) 0.022(0.55) Low stored charge.
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CDBQR00340-HF
MIL-STD-750
QR/0402
QW-G1106
QW-G1106
smd diode code B2
diode marking b2
SMD Schottky Barrier Diode 0402
SMD MARKING CODE B2
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smd diode code B2
Abstract: Device marking code 1m diode sMD diode B2 diode marking b2 diode code b2 smd diode marking b2 smd Diode marking CODE 1M SMD marking b2 smd schottky diode b2 QW-G1002
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBU00340-HF RoHS Device Io = 30 mA V R = 40 Volts Features 0603(1608) Halogen free. 0.071(1.80) 0.063(1.60) Designed for mounting on small surface. Extremely thin package. 0.039(1.00) 0.031(0.80) Low stored charge.
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CDBU00340-HF
MIL-STD-750
U/0603
QW-G1002
smd diode code B2
Device marking code 1m diode
sMD diode B2
diode marking b2
diode code b2 smd
diode marking b2 smd
Diode marking CODE 1M
SMD marking b2
smd schottky diode b2
QW-G1002
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smd diode code B2
Abstract: SMD Schottky Barrier Diode 0402 SMD marking b2 diode code b2 smd SMD Schottky Barrier Diode 0402 D1 diode marking b2 SMD diode B2 smd b2 marking
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR00340 RoHS Device Io = 30 mA V R = 40 Volts Features 0402(1005) Designed for mounting on small surface. 0.041(1.05) 0.037(0.95) Extremely thin package. Low stored charge. 0.026(0.65) 0.022(0.55) Majority carrier conduction.
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CDBQR00340
MIL-STD-750
QR/0402
QW-A1131
smd diode code B2
SMD Schottky Barrier Diode 0402
SMD marking b2
diode code b2 smd
SMD Schottky Barrier Diode 0402 D1
diode marking b2
SMD diode B2
smd b2 marking
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smd diode code B2
Abstract: SMD MARKING CODE 102 diode code b2 smd 1m SMD diode SMD diode B2 smd code marking pd SMD MARKING CODE 009 SMD MARKING CODE D1 marking code SMD 30 MARKING CODE SMD diode
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBF00340-HF RoHS Device Io = 30 mA V R = 40 Volts Features 1005(2512) Halogen free. 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin package. 0.051(1.30) 0.043(1.10) Low stored charge.
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CDBF00340-HF
MIL-STD-750
F/1005
QW-G1004
smd diode code B2
SMD MARKING CODE 102
diode code b2 smd
1m SMD diode
SMD diode B2
smd code marking pd
SMD MARKING CODE 009
SMD MARKING CODE D1
marking code SMD 30
MARKING CODE SMD diode
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general purpose bridge rectifier
Abstract: comchip rectifier bridge low smd diode bridge
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-HF Thru B10S-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Halogen Free MBS Features -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board.
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B05S-HF
B10S-HF
125grams.
QW-JBR03
82MIN
55REF
92MIN
00MAX
032MIN
100REF
general purpose bridge rectifier
comchip rectifier bridge low
smd diode bridge
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Untitled
Abstract: No abstract text available
Text: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)
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B01S-G
B05S-G
B10S-G
O269AA
125grams.
QW-BBR01
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KPL-3015PWF-A
Abstract: IR 5MM LED smd diode B4 9000K
Text: 3.0mmx1.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: KPL-3015PWF-A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features z3.0mmx1.5mm zLOW SMT LED, 1.4mm THICKNESS. Emitting Diode. POWER CONSUMPTION.
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KPL-3015PWF-A
2000PCS
7000k
5600k
4600k
DSAG4565
APR/02/2007
KPL-3015PWF-A
IR 5MM LED
smd diode B4
9000K
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1203-005570
Abstract: CIE1931
Text: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APHH1005RWF/A
2000PCS
4600k
DSAG6504
JUN/04/2007
1203-005570
CIE1931
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diode schottky 40v 30ma
Abstract: No abstract text available
Text: ASB00340 SMD Schottky Barrier Diode Preliminary Features General Description IO = 30mA VR = 40V 0603(1608) 0.071(1.80) 0.063(1.60) - Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) - Extremely thin package. - Low capacitance. 0.033(0.85)
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ASB00340
MIL-STD-750,
diode schottky 40v 30ma
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IDC2000
Abstract: CIE1931
Text: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APH1608RWF/A
2000PCS
4600k
DSAG3635
JUN/29/2007
IDC2000
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APHH1005RWF/A
2000pcs
DSAG6504
AUG/15/2008
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APH1608RWF/A
2000pcs
DSAG3635
AUG/16/2008
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APT1608RWF/A
2000pcs
DSAG3636
AUG/16/2008
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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APJKA4008RWC/A
2000pcs
DSAG3649
AUG/15/2008
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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APA1606RWF/A
2000PCS
4600k
DSAG3638
MAY/17/2007
CIE1931
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1PS184
Abstract: A2 diode smd SC59
Text: Philips Semiconductors Product specification High-speed double diode 1PS184 FEATURES DESCRIPTION • Small plastic SMD package The 1PS184 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small plastic SMD SC59
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OCR Scan
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PDF
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1PS184
1PS184
711062fa
A2 diode smd
SC59
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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OCR Scan
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PDF
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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