SMD DIODE B3 Search Results

diode tfk s 220

Abstract: TFK BP 3 TFK 140 TFK S KJ SMD DIODE MARKING
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF10SC4M PyKLl°- ffl 40V m Unit-mm Weight 1.5g (Typ) 10.2 DA Feature a • SMD <SMD • Tj=150°C 1Tj=150°C 1 P rrsm Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use 1Switching Regulator

1PS184

Abstract: SC59 MAM084 SMD diode MARKING CODE 03
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 1PS184 High-speed double diode Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed double diode 1PS184 FEATURES DESCRIPTION • Small plastic SMD package

Contextual Info: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

smd DIODE B34

Abstract: DIODE B34 b34 diode B34 diode smd diode smd b34 smd diode s8 TWG4148AC-128W TWG4148AD-125WS TWG4148CD-126WT TWG4148T-16WS
Contextual Info: SMD Switching Diodes Arrays Multiple Terminals Peak Mark- Reverse ing Voltage Code Part No. Max. Reverse Current @ VR Max. Forward Voltage Drop @ IF SMD Diodes Max. Max. Diode Reverse CapaciPackRecovery tance Pinout age Time @1MHz Diag. 0V CT Trr 7" Reel

X4 DIODE SMD

Abstract: smd diode marking LM smd diode marking B3 smd zm diode
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20SC4M P y K L l°- ffl 40V m U n it-m m W e ig h t 1.5g (T y p ) 10.2 DA Feature a <SMD • SMD • Tj= 150°C 1Tj=150°C 1 P rrs m Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use

1PS184

Abstract: SC59
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 1PS184 High-speed double diode Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed double diode 1PS184 FEATURES DESCRIPTION • Small plastic SMD package

1PS301

Abstract: smd diode code ok 96
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 1PS301 High-speed double diode Product specification Supersedes data of 1996 Oct 04 1999 May 06 Philips Semiconductors Product specification High-speed double diode 1PS301 FEATURES DESCRIPTION • Very small plastic SMD package

A82 SMD

Abstract: marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3
Contextual Info: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V

smd diode B3

Abstract: smd diode code b3 b3 smd diode smd marking b3 smd transistor b3 smd code B3 smd marking MM b3 b3 smd transistor CDBU0130-HF smd code book B3 transistor
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0130-HF RoHS Device Io = 100 mA V R = 30 Volts Features 0603(1608) Halogen free. 0.071(1.80) 0.063(1.60) Designed for mounting on small surface. Extremely thin package. 0.039(1.00) 0.031(0.80) Low stored charge.

smd diode A82

Abstract: smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6
Contextual Info: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V

smd diode B3

Abstract: smd diode code b3 smd marking code b3 b3 smd diode smd diode marking B3 smd marking MM b3 smd marking b3 MARKING SMD B3 b3 smd transistor b3 smd marking code
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0130-HF RoHS Device Io = 100 mA V R = 30 Volts Features 1005(2512) Halogen free. 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin package. 0.051(1.30) 0.043(1.10) Low stored charge.

1PS301

Abstract: smd diode code b3 diode MARKING b3 smd code marking WV JTP 8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D187 1PS301 High-speed double diode Product data sheet Supersedes data of 1996 Oct 04 1999 May 06 NXP Semiconductors Product data sheet High-speed double diode 1PS301 FEATURES DESCRIPTION • Very small plastic SMD package

DIODE MARKING CODE B3

Abstract: smd diode B3 sod*323* diode MARKING B3 SMD 5 PIN CODE F10 smd diode code b3 diode smd 25 b3 smd diode DIODE F10 smd code book B3 B0530WS
Contextual Info: B0530WS 200mW, Low V F SMD Schottky Barrier Diode Small Signal Diode SOD-323F B Features C A —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate E —Pb free version and RoHS compliant

Contextual Info: B0530WS 200mW, Low V F SMD Schottky Barrier Diode Small Signal Diode SOD-323F B Features C A ­Fast switching device Trr<4.0nS ­Surface device type mounting D ­Moisture sensitivity level 1 ­Matte Tin(Sn) lead finish with Nickel(Ni) underplate E ­Pb free version and RoHS compliant

KPL-3015PWF-A

Abstract: IR 5MM LED smd diode B4 9000K
Contextual Info: 3.0mmx1.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: KPL-3015PWF-A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features z3.0mmx1.5mm zLOW SMT LED, 1.4mm THICKNESS. Emitting Diode. POWER CONSUMPTION.

KPK-3020QWC-D

Abstract: smd diode B4 4600k
Contextual Info: 3.0x2.0mm SMD CHIP LED LAMP ATTENTION Part Number: KPK-3020QWC-D WHITE OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z3.0mmX2.0mm zLOW SMT LED, 1.3mm THICKNESS. Sapphire Light Emitting Diode. POWER CONSUMPTION.

Contextual Info: Philips Semiconductors Product specification High-speed double diode 1PS301 FEATURES DESCRIPTION • Very small plastic SMD package The 1PS301 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated

Contextual Info: Schottky Barrier Diode Single Diode M2FH3 U n it ‘ m m Package : M2F Weight 0.072« T y p 30V 6A Feature • /JvguSMD •«« V f=0.36V • Small SMD • Super-Low Vf=0.36V • I { "J t U — iiJ S K ih • Reverse connect protection for DC power source

1203-005570

Abstract: CIE1931
Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

IDC2000

Abstract: CIE1931
Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535ZG25Z1S-AMT Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.

CIE1931

Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

LM 385 N

Abstract: CIE1931
Contextual Info: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535ZG25Z1S-AMT Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.