SMD DIODE GG 45 Search Results

smd diode marking zf

Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Contextual Info: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •

SMD diode NC

Abstract: smd JS SMD 2002 TO-254AA Package smd js t 74 HC 00 smd 2003 SMD IC
Contextual Info: SEMTECH CORP E1E D • D0D52S3 & ■ 7-3?-// SEMTECH CORPORATION MICROELECTRONICS DIVISION SMD 2001 N-Channel Power MOSFETs, IN HERMETIC ISOLATED TO -254AA PACKAGE Ideally suited for applications such as switching pow er supplies, m otor controls, inverters, choppers, audio

oled display driver

Contextual Info: MXED101 30V, 192-Channel OLED Display Driver Features • CMOS technology • 192 output channels • Programmable output current control • The option of using 3.3V or 5V logic supply voltage • 55 MHz clock frequency • A function for cascading more than one device

smd diode code b54

Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
Contextual Info: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current

gc 5.5V 1.0F

Abstract: AN 17823 17823 OLED driver IC MXED101 MXED101DI MXED101TP 5.5V 1.0f GC
Contextual Info: MXED101 30V, 192-Channel OLED Display Driver General Description Features: • CMOS technology • 192 Precision outputs • Programmable output current control • Optimized adjacent channel and chip-to-chip output matching • 3.3V or 5V logic supply voltage

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MXED101

Abstract: oled display driver oled row driver
Contextual Info: MXED101 30V, 192-Channel OLED Display Driver Features • • • • • • • • • • • CMOS technology 192 output channels Programmable output current control The option of using 3.3V or 5V logic supply voltage 55MHz clock frequency A function for cascading more than one device

smd transistor marking 7j

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
Contextual Info: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current

diode smd marking BUZ

Abstract: TRANSISTOR 023 3010 Q67040-S4003-A2 G1337 diode smd m7 BUZ111S E3045 TRANSISTOR AO SMD MARKING smd code book smd marking ACH
Contextual Info: BUZ 111S Infineon t«chnologi«$ SIPMOS Power Transit Product Summary Features V 55 • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current fîDS on> 0.008 i i 80 A b • dv/df rated

Contextual Info: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current

transistor 8BB smd

Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
Contextual Info: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated

Contextual Info: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated

09n05

Abstract: D 92 M - 02 DIODE
Contextual Info: Infineon ^ p r o v c d R technologie* SPD^ ° 5 » - '1 SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS 55 • Enhancement mode Drain-Source on-state resistance f l DS on 0.1 Q. • Avalanche rated Continuous drain current

BUZ100

Contextual Info: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A

Contextual Info: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« | High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q

Contextual Info: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6

Transistor SMD SM 942

Contextual Info: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30

XC+872

Contextual Info: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current

smd transistor marking dj

Abstract: SMD Transistor PIT BUZ103SL E3045 Q67040-S4008-A2 P-T0263-3-2
Contextual Info: ,•— BUZ 103SL Infineon \m p fO ',c d l w • e fi n o I o g I e $ ’ SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

23N05

Contextual Info: SPD 23N05 Infineon t« c h n o l o g ¡ o s i m p * o V e d R o ,°"’ SIPMOS PowerTransistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

Contextual Info: SPD 28N03 I nf ine on technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R DS on • Avalanche rated Continuous drain current V 30 0.023 Q A 28 • üv/üt rated

BTS110

Contextual Info: SIEMENS TEMPFET BTS110 Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type BTS 110 100 V 1 2 3 G D S ID ^DS or Package Ordering Code 10 A 0.2 £2

transistor SMD 1gs

Abstract: 46n03l smd 1Gs SD-46 Diode
Contextual Info: , • - SPP 46N03L Inf ineon technology SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel ^D S Drain-Source on-state resistance . Enhancement mode f l D S o n Continuous drain current • Avalanche rated 30 V 0 .0 1 2

ISD203

Abstract: IS201 IS202 IS203 IS204 ISD201 ISD202 ISD204 ISQ201 ISQ202
Contextual Info: IS201, IS202, IS203, IS204, ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISQ203, ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Package Code " GG " or " FF " IS201 IS202 IS203 IS204 7.0 6.0 'X' SPECIFICATIONAPPROVALS