SMD DIODE JC 68 Search Results

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other

Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate

st smd diode marking code

Abstract: STPS20100S1 smd diode B3 STMicroelectronics smd DIODE marking code STPS20100AFSYHRB 5106 smd diode code B2 smd diode order marking code stmicroelectronics STPS20100HR STPS20100SHRB
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses

6 pin TRANSISTOR SMD CODE PA

Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Contextual Info: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol

transistor smd MJ 145

Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Contextual Info: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter

A7 SMD TRANSISTOR

Abstract: smd JH transistor smd diode a7 smd transistor A7 SMD a7 Transistor 6 pin TRANSISTOR SMD CODE 21 smd transistor js BUZ21 smd diode os smd transistor A7 s 50
Contextual Info: Infineon technologies BUZ 21 SMD SIPMOS Power T ransistor • N channel • Enhancement mode tab • Avalanche-rated Pin 1 Pin 2 Pin 3 c? (/> D Type BUZ 21 SMD 100 V 1D R OS(on) 21 A 0.085 Í2 Package d 2p a k Ordering Code Q67042-S4132 Maximum Ratings

1FW smd

Abstract: SMD 1FW 1FW 55 1FW 14 smd 1FW 75 1FW 85 1FW 29 BTS100 1FW 60 smd code 12.00 Jn
Contextual Info: SIEMENS Smart Highside Power Switch TEMPFET Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type Vos h BTS 100 -5 0 V -8 A ^DS<on 0.3 £2 Package Ordering Code

Drive circuit for IGBT using IR2130

Abstract: Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1
Contextual Info: International ion R e c tifie r D e sig n T ips DT 93-6B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 MINIATURIZATION OF THE POWER ELECTRONICS FOR MOTOR DRIVES By G erry Limjuco & Dana Wilhelm

ld smd transistor

Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax

400v p-channel mosfet

Abstract: P-Channel mosfet 400v KQB4P40
Contextual Info: Transistors IC SMD Type 400V P-Channel MOSFET KQB4P40 1 .2 7 -0+ 0.1.1 TO-263 Features 3.5A, -400V, RDS on = 3.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 @VGS = -10 V 5 .2 8 -0+ 0.2.2 100% avalanche tested Improved dv/dt capability 0.1max +0.1 1.27-0.1 Fast switching

smd 1C

Abstract: 1b smd transistor smd diode JC
Contextual Info: IC IC SMD Type 60V N-Channel PowerTrenchTM MOSFET KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: IC IC MOSFET SMD Type Product specification KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability

Contextual Info: Transistors IC SMD Type Product specification KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 +0.1

1b.1 smd transistor

Abstract: smd transistor nc 61 1B 4 SMD 1b smd transistor smd diode JC 7 SMD Transistor nc KDD3680
Contextual Info: Transistors IC SMD Type 100V N-Channel Power Trench MOSFET KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15

3phase MOSFET INVERTER

Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
Contextual Info: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.

diode SMD CODE sm 17

Abstract: C67078-A5007-A2 E3045 GPT05155 C67078-A5007 smd rgs BTS100
Contextual Info: Smart Highside Power Switch TEMPFET BTS 100 Features ● ● ● ● P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type VDS ID RDS on Package Ordering Code BTS 100

A4t 29 smd

Abstract: smd a4t
Contextual Info: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current

Contextual Info: SIEM ENS TEMPFET BTS115A Features • • • • • N channel Logic level Enhancem ent mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Inform ation

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

4606 MOSFET INVERTER

Abstract: SMD MOSFET DRIVE DATASHEET 4606 mosfet cross reference inverter 4606 A12A 4606 inverter ic eltek flatpack LED DRIVER ana 618 uc3843 inverter circuit 4606 inverter KA3843
Contextual Info: Shortform Catalog February 2001 http://www.micrel.com/ Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • +1 408 944-0800 • +1 408 944-0970 Micrel Shortform Catalog February 2001 2001 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any

transistor buz 104

Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package

C67078-A5007-A2

Abstract: E3045 GPT05155 C67078-A5007 diode SMD CODE sm 17 C67078-A5007-A7 TEMPFET
Contextual Info: TEMPFET BTS 100 Smart Highside Power Switch Features ● ● ● ● P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type VDS ID RDS on Package Ordering Code BTS 100