SMD DIODE JC 7 Search Results

smd diode marking JC

Abstract: marking JC diode smd diode JC smd marking T1 marking JTp JC SMD marking JC BAL74W JTp smd JC SMD DIODE
Contextual Info: Diodes SMD Type High-speed diode BAL74W Features Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V Continuous reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. Absolute Maximum Ratings Ta = 25

DIODE SMD 10A

Abstract: smd diode 0.5A fast diode super fast smd marking XF diode T3 Marking DC AC SINE WAVE CONVERTER smd mk SMD DIODE BOOK
Contextual Info: Super Fast Recovery Diode Twin Diode m tm OUTLINE Package : STO-220 DF10LC30 U n it-m m W eight 1.5g T y p U '^àLÌ°-(M ) 10.2 300V 10A Feature • SMD • SMD •e y -rx • Low Noise • trr=30ns • trr=30ns 4.7 Main Use ’ 7 ,-f • Switching Regulator

KO3402

Abstract: equivalent smd mosfet N-CHANNEL MOSFET 30V 2A SOT-23 DIODE smd 434 smd 4A data smd diode JC smd transistor ja AO3402 mosfet vgs 5v iGSS 80 nA Vgs 0v
Contextual Info: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3402 AO3402 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 RDS(ON) 0.55 ID = 4 A

smd diode marking JC

Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Contextual Info: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g

smd transistor 2A

Abstract: SMD Transistor nc
Contextual Info: Transistors IC SMD Type 300V N-Channel MOSFET KQB3N30 TO-263 3.2A, 300 V. RDS ON = 2.2 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2

diode ja

Abstract: smd transistor nc 61 78 DIODE SMD SMD Transistor nc KQB630
Contextual Info: Transistors IC SMD Type 200V N-Channel MOSFET KQB630 TO-263 9A, 200 V. RDS ON = 0.4 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 19nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1

SMD Transistor nc

Contextual Info: Transistors IC SMD Type 500V N-Channel MOSFET KQB4N50 1 .2 7 -0+ 0.1.1 TO-263 Features 3.4A, 500 V. RDS ON = 2.7 @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 100% avalanche tested lmproved dv/dt capability 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1

smd transistor 2A

Abstract: SMD Transistor nc
Contextual Info: Transistors IC SMD Type 600V N-Channel MOSFET KQB2N60 TO-263 2.4A, 600 V. RDS ON = 4.7 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2

smd transistor 26

Abstract: SMD Transistor nc L378
Contextual Info: Transistors IC SMD Type 300V N-Channel MOSFET KQB2N30 TO-263 2.1A, 300 V. RDS ON = 3.7 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 100% avalanche tested +0.1 0.81-0.1

SMD Transistor nc

Abstract: VOLTAGE SUPPRESSOR SMD KDB7045L suppressor diode smd
Contextual Info: Transistors IC SMD Type N-Channel Logic Level PowerTrench MOSFET KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS ON = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON)

Contextual Info: Transistors IC SMD Type Product specification KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS ON = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON)

SMD Transistor nc

Abstract: TLV300
Contextual Info: Transistors IC SMD Type 200V N-Channel MOSFET KQB5N20 TO-263 4.5A, 200 V. RDS ON = 1.2 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 100% avalanche tested +0.1 0.81-0.1

diode 6t6

Abstract: SMD TRANSISTOR 12a P5 smd transistor STTA1206M diode smd 600V soft recovery smd diode 600v 1a smd transistor xf SMD a7 Transistor smd transistor A7 s 22
Contextual Info: f Z ^ 7 7 # S G S -T H O M S O N STTA _ 1206M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 12A V rrm 600V trr (typ) 28ns V f (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.

20L60U

Contextual Info: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DF20L60U U nit: nun Package : STO-220 Weight lü g Typ 10.2 600V 20A Dale code ^ Control No Feature • SMD • SMD • Low Noise • trr-35ns • trr-3 5 n s m & Main Use • T .'f '7 y V i 7 ;®

Contextual Info: Transistors IC SMD Type N-Channel PowerTrenchTMMOSFET KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features @ VGS = 10 V 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS ON .

SMD Transistor nc

Contextual Info: Transistors IC SMD Type 500V N-Channel MOSFET KQB9N50 TO-263 9A, 500 V. RDS ON = 0.73 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2

Contextual Info: Transistors IC SMD Type 500V N-Channel MOSFET KQB2N50 TO-263 2.1A, 500 V. RDS ON = 5.3 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 6.0nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1

Contextual Info: Transistors IC SMD Type 600V N-Channel MOSFET KQB5N60 TO-263 Unit: mm 5.0A, 600 V. RDS ON = 2.0 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Low gate charge (typical 16nC) +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability

F00002A

Abstract: SFF70N04
Contextual Info: SFF70N04 SERIES SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 70 AMP / 40 VOLTS 0.010 Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET Part Number /Ordering Information

Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF1302S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Operating Temperature 0.1max +0.1 1.27-0.1 Repetitive Avalanche Allowed up to Tjmax +0.1 0.81-0.1 2.54 2.54

ld smd transistor

Abstract: dsa0023459 KRF9610S
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF9610S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount +0.1 1.27-0.1 +0.2 4.57-0.2 Available in Tape & Reel 5 .2 8 -0+ 0.2.2 Simple Drive Requirements 0.1max +0.1 1.27-0.1 Fast Switching +0.1 0.81-0.1 2.54

Contextual Info: Transistors IC SMD Type 400V N-Channel MOSFET KQB3N40 TO-263 Features @ VGS = 10 V 1 .2 7 -0+ 0.1.1 2.5A, 400 V. RDS ON = 3.4 Low gate charge (typical 6.0nC) Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54

Contextual Info: Transistors IC SMD Type 700V N-Channel MOSFET KQB6N70 TO-263 Unit: mm 6.2A, 700 V. RDS ON = 1.5 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Low gate charge (typical 130nC) +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54

smd diode JC

Abstract: SMD Transistor nc
Contextual Info: Transistors IC SMD Type 800V N-Channel MOSFET KQB2N80 1 .2 7 -0+ 0.1.1 TO-263 Features 2.4A, 800 V. RDS ON = 6.3 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 10 V 5 .2 8 -0+ 0.2.2 100% avalanche tested lmproved dv/dt capability 0.1max +0.1 1.27-0.1 Fast switching