SMD DIODE LC 61 Search Results

SFH6112

Abstract: Siemens optocoupler sfh610 SFH610 Siemens optocoupler sfh610A SFH611A-4 SFH6186T-3 Siemens sfh615 optocoupler SFH611-3 SFH611A-3 sfh610 equivalent
Contextual Info: SFH6106T SFH6116T SFH6156T SFH6186T SFH6206T SFH6286T SIEM EN S 5883 5.3 kV TRIOS HIGH RELIABILITY OPTOCOUPLERS FEATURES • SMD Versions of SFH610, 611,615,618, 620,628 • Available on Tape and Reel Suffix T • TRIOS — tansparent lOn Shield Package Dimensions in Inches (mm)

smd transistor WF

Contextual Info: SFH618A/628A SIEMENS PHOTOTRANSISTOR, 5.3 kV TRIOS LOW CURRENT INPUT OPTOCOUPLER P a c k a g e D im e n sio n s in In ch e s m m .*T ^ l FEATURES • Very High CTR at lF=1 mA, VCE=0.5 V - SFH618A-2, 6 3 -1 2 5 % - S F H 618A -3,100-200% - S F H 618A -4,160-320%

SFH61BA-5

Abstract: 628A SFH62BA-2 Diode SMD SJ 05
Contextual Info: SFH618A/628A SIEMENS PHOTOTRANSISTOR, 5.3 kV TRIOS LOW CURRENT INPUT OPTOCOUPLER FEATURES • Very High CTR at lF=1 mA, VCE=0.5 V • SFH618A-2, 63-125% SFH61 B A -3,100-200% S F H 618A -4,160-320% SFH61BA-S, 250-500% SFH62BA-2, 63-200% S FH 628A -3,100-320%

UMSH-3112JNV-1G

Abstract: smd zener diode mark J2 RFID Entry Door Lock Access Control System DS00710 IND-AIR-10-00189-500V-PTH AN1024 Transponder TPX buzzer CC 1206 umsh SMD SOT23 transistor MARK Y1
Contextual Info: AN1024 PKE System Design Using the PIC16F639 Author: Youbok Lee, Ph.D. Microchip Technology Inc. INTRODUCTION Hands-free Passive Keyless Entry PKE is quickly becoming mainstream in automotive remote keyless entry applications and is a common option on new

Contextual Info: SIEMENS SFH610A/611A/615A/617A 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY FEATURES • High Current Transfer Ratios at 10 mA: 40-3 20% at 1 mA: 60% typical >13 Low CTR Degradation Good CTR Linearity Depending on Forward Current W ithstand Test Voltage, 5300 VACRMS

mcp60221

Abstract: IND-AIR-10-00189-500V-PTH UMSH-3112JNV-1G FAIRCHILD 1n5819 SMD diode Zener 5.1V UNITED RADIANT UMSH-3112JNV-1G yageo 1206 smd 1N5819 smd diode buzzer CC 1206 smd diode B3 SOT23
Contextual Info: AN1024 使用 PIC16F639 的 PKE 系统设计 作者： Youbok Lee, Ph.D. Microchip Technology Inc. 引言 免持式被动无钥门禁 （Passive Keyless Entry， PKE） 正迅速成为汽车远程无钥门禁应用的主流，并成为新型 汽车的普遍选择。使用该系统时，无需用手按发送器按

30N60

Contextual Info: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO

IXSH24N60A

Contextual Info: □ IXYS HiPerFAST IGBT with Diode / IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 / IXSH24N60AU1S V CES ^C25 V C E sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V v CGR T d = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB

smd diode 819

Abstract: 30n60
Contextual Info: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

TO-247 Package y

Contextual Info: □ IXYS Preliminary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S V CES 600 V 60 A 1.8 V 130 ns ^C25 V CE sat Combi Pack TO-247 SMD (30N60BU1S) m Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

IXGH24N60BU1

Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Contextual Info: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600

24N60AU1

Abstract: 24n80
Contextual Info: HiPerFAST IGBT with Diode IXSH24N60U1/IXSH24N60U1S IXSH24N60 AU1 /IXSH24N60 All 1S v CES ^C25 V v CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SO A Capability Symbol Test Conditions V v CGR Tj = 25°C to 150°C Tj = 25°C to 150°C; ROE = 1 M ii

32N60BU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C

smd diode UJ 64 A

Abstract: cz 017 v3
Contextual Info: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90

40N30BD1

Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

.24n50

Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Contextual Info: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C

SMD Transistor 1f

Abstract: 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram
Contextual Info: ZXCD100MOEVAL 100W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Class D architecture The ZXCD100MOEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high

Contextual Info: SIEMENS SFH61OA/611A/615A/617A 5.3 kV TRIOS Optocoupter High Reliability FEATURES • High Current Transfer Ratios at 10 mA: 40-320% al 1 mA: 60% typical >13 • Low CTR Degradation • Good CTR Linearity Depending on Forward Currant • WtthMarKl Tent Voltnp*, $300VACrms

32N50

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C

Contextual Info: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU

617A

Contextual Info: SIEMENS SFH61OA/611A/615A/617A 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY FEATURES • High Currant Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical >13 • Low CTR Degradation • Qood CTR Linearity Depending on Forward Current • • • Withstand Test Voltage, 5300 VACRMs