SMD DIODE MARKING 26 Search Results

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA8S03G RoHS Device Voltage: 10Volts Current: 50 mA Package (SOT-23) Feature Marking “ CDA8 “ Schematic This diode network is designed to provide an integrated solution for the active termination of

Contextual Info: Diode Network / ESD Suppressor COMCHIP SMD DIODE SPECIALIST CDA4S14G RoHS Device Voltage: 13 Volts Current: 50 mA Package (SOT-143) Feature Marking “ CDA4 “ This diode network is designed to provide two channels for active termination of highspeed data signals to eliminate signal

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designed to provide six channels for active termination of high-speed data signals to eliminate signal undershoot and

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08-G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designedto provide six channels for active termination of high-speed data signals to eliminate signal undershootand

A82 SMD

Abstract: marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3
Contextual Info: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V

smd diode A82

Abstract: smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6
Contextual Info: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V

smd code marking 777

Abstract: BB155 SMD MARKING CODE 1C marking code pe
Contextual Info: Philips Semiconductors Product specification Low-voltage variable capacitance diode BB155 FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance -n - • Very small plastic SMD package. APPLICATIONS Marking code: PE. • Voltage controlled oscillators

8M SMD

Abstract: BAS116
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS

BAS116

Abstract: MARKING JS sot-23 smd marking NC package sot23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS

ZENER DIODE marking l2

Abstract: zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B
Contextual Info: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.

1N50xx

Abstract: SMD zener marking code 102
Contextual Info: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.

SMD DIODE 512

Abstract: smd sot23 marking l6 SMD MARKING CODE L6 smd schottky diode marking BP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT720 Schottky barrier diode Product specification Supersedes data of 1999 May 26 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier diode FEATURES BAT720 PINNING • Ultra high switching speed

Contextual Info: Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist CDBD8060-G Thru. CDBD8100-G Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device TO-263/D2PAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

diode NXP marking code N1

Contextual Info: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.

z12 smd code sot23

Abstract: SMD MARKING code 613 sot23 smd code Z70 SMD marking Z4 SMD MARKING CODE Z2 smd code z16 Y11 smd code smd z17 z67 smd marking Z58
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 18 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation:

A08K

Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
Contextual Info: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4

BAP51-06W

Abstract: Diode smd w7 diode s4 53 smd diode marking 111 BAP51
Contextual Info: BAP51-06W General purpose PIN diode Rev. 01 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package. 1.2 Features • Two elements in common anode configuration in a small SMD plastic package

DIODE smd marking pl

Abstract: UHF variable capacitance diode SC76 SC-76 smd DIODE code marking Q
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BB149A/TM UHF variable capacitance diode Product specification 2002 Mar 26 Philips Semiconductors Product specification UHF variable capacitance diode BB149A/TM FEATURES PINNING • High linearity PIN

cdbhd2100-g

Abstract: B 220G MDS210 CDBHD240-G TO-269AA CDBHD220-G TO269AA mds26 mds24 marking 691
Contextual Info: COMCHIP Low VF SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBHD220-G Thru. CDBHD2100-G Reverse Voltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device Features TO-269AA Schottky barrier chips in TO-269AA bridge. Metal semiconductor junction with guard ring.

PH 17G

Abstract: PH marking code str 40115 ph-17j PH17G st smd diode marking code DE ph-17g marking code PH 817 marking 122 PHILIPS ph-17m
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD17 series General purpose controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 26 1999 Nov 11 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers

TO-269AA

Abstract: MDS210 smd DIODE code marking 20A TO269AA CDBHD2100-G
Contextual Info: COMCHIP Low VF SMD Schottky Bridge Rectifiers SMD Diodes Specialist ~ S MDXX X CDBHD220-G Thru. CDBHD2100-G + Reverse Voltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device ~ - Features TO-269AA Schottky barrier chips in TO-269AA bridge. Metal semiconductor junction with guard ring.

SMD diode MARKING P2

Abstract: BB132 diode marking P2 BB132 diode CD smd diode
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF Variable Capacitance Diode BB132 1 FEATURES • High linearity · Excellent matching to 1% DMA · Very small plastic SMD package · C28: 2.5 pF; ratio: 26. APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz

Contextual Info: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 VDS V = -30V 0.4 3 Features 1 RDS(ON) 180 m (VGS = -4.5V) RDS(ON) 260m (VGS = -2.5V) 2 +0.1 0.95-0.1 +0.1