SMD DIODE MARKING S15 Search Results

Contextual Info: Formosa MS SMD Super Fast Rectifier SFM11-S THRU SFM18-S List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Super Fast Rectifier SFM11 THRU SFM18 List List. 1 Package outline. 2

smd diode marking s18

Abstract: smd diode marking s16 diode SMD CODE s17 smd diode marking s15 marking s15 diode SMD diode s16
Contextual Info: Formosa MS SMD Super Fast Rectifier SFM11 THRU SFM18 List List. 1 Package outline. 2

smd diode marking s16

Abstract: diode SMD CODE s17 smd diode marking s18 smd marking s13 SFM17-L SMD diode s16 smd marking s14 S14 SMD diode smd diode SFM13-L S13 SMD
Contextual Info: Formosa MS SMD Super Fast Rectifier SFM11-L THRU SFM18-L List List. 1 Package outline. 2

diode SMD CODE s17

Abstract: smd diode marking s16 smd diode marking s18
Contextual Info: Formosa MS SMD Super Fast Rectifier SFM11-S THRU SFM18-S List List. 1 Package outline. 2

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

marking s15 diode

Abstract: smd diode marking s15 MARKING S15 HRW0702A
Contextual Info: Diodes SMD Type Silicon Schottky Barrier Diode HRW0702A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 high effifiency rectifying. 0.55 Low forward voltage drop and suitable for +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MPAK package is suittable for high density

Contextual Info: Si8425DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) a, e 0.023 at VGS = -4.5 V -9.3 0.027 at VGS = -2.5 V -6.2 0.040 at VGS = -1.8 V -5.1 Qg (TYP.) 36 nC • Low-on resistance

Contextual Info: Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.0190 at VGS = -4.5 V -10.2 0.0234 at VGS = -2.5 V -9.2 0.0350 at VGS = -1.8 V -7.5 VDS (V) -12 Qg (TYP.) 37 nC 6 1. 7 845xx x m m

Contextual Info: Si8439DB www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.025 at VGS = -4.5 V -9.2 VDS (V) -8 0.030 at VGS = -2.5 V -8.4 0.037 at VGS = -1.8 V -7.6 0.061 at VGS = -1.5 V -5.9 0.125 at VGS = -1.2 V

Contextual Info: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline

Contextual Info: Si8424CDB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 VDS (V) 8

Contextual Info: Si8409DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () ID (A) 0.046 at VGS = -4.5 V -6.3 0.065 at VGS = -2.5 V -5.3 Qg (TYP.) 17 • TrenchFET power MOSFET • MICRO FOOT® chipscale packaging reduces

GC 72 smd diode

Abstract: smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode
Contextual Info: PD - 9.1413C International I R Rectifier IRLMS5703 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vqss = *30V R D S (o n ) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: UPS115U ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER 1.0 AMP, 15 VOLT C OL OR AD O DIVISIO N DESCRIPTION In addition to its size advantages, Powermite package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during

8700 CJ

Abstract: UPS115U
Contextual Info: UPS115U SCOTTSDALE DIVISION ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER 1.0 AMP, 15 VOLT DESCRIPTION In addition to its size advantages, Powermite package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during

15 amp 1000 Volt Diode

Contextual Info: UPS115U ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER 1.0 AMP, 15 VOLT C OL OR AD O DIVISIO N DESCRIPTION In addition to its size advantages, Powermite package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during

TE 2161

Abstract: UPS115U
Contextual Info: UPS115U ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER 1.0 AMP, 15 VOLT C OL OR AD O DIVISIO N DESCRIPTION In addition to its size advantages, Powermite package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during

interfacing rs232 to zigbee

Abstract: P10 led module CONNECT LDR sensor circuit and implementation Light dependent resistor how to connect MAX3232 smd light dependent resistor circuit diagram DSUB9F RC2301 Light Dependent Resistor LDR zigbee interfacing with rs232
Contextual Info: Radiocrafts Embedded Wireless Solutions RC2300DK/RC2301DK RC2300DK/RC2301DK Demonstration Kit User Manual Table of contents TABLE OF CONTENTS .1 INTRODUCTION .2

2D 1002 diode

Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Contextual Info: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier

AS15-U

Abstract: As15u
Contextual Info: UPS115Ue3 Compliant Ultra Low VF Schottky Barrier Rectifier 1.0 Amp, 15 Volt DESCRIPTION In Microsemi’s Powermite 1 SMT Package, these high efficiency Schottky rectifiers offer power handling capabilities previously found only in much larger packages. They are ideal for SMD

TRANSISTOR SMD MARKING CODE sn

Abstract: smd transistor marking code D13 marking code s20 SMD Transistor S19 SMD MARKING CODE smd diode marking s16 smd marking s14 smd transistor marking D10 code marking s20 TRANSISTOR smd marking 634 smd diode marking s18
Contextual Info: INTEGRATED CIRCUITS GTL2000 22-bit bi-directional low voltage translator Product data Supersedes data of 2000 Jan 25 Philips Semiconductors 2003 Apr 01 Philips Semiconductors Product data 22-bit bi-directional low voltage translator GTL2000 FEATURES DESCRIPTION

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

ISP1703

Abstract: smd diode marking s16 smd diode marking s29 smd diode S6 1b smd diode s4 2b P174AVC164245 S14 SMD 2b5 bridge diode Diode smd s6 95 ISP1703B
Contextual Info: ISP1703 Hi-Speed ULPI T&MT eval board UM0781 User Manual Abstract The ISP1703 evaluation eval kit allows system designers to evaluate the functions and features of the ISP1703. CD00246098 Rev 01 2009-11-04 Copyright ST-Ericsson, 2009. All Rights Reserved.