SMD DIODE MARKING SM 34 Search Results

15SC4M

Abstract: DIODE BJE marking JB SCHOTTKY BARRIER DIODE marking JB diode DIODE BJE smd MARKING JM smd marking 5G DF15SC4M SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF15SC4M o u t lin e 40 V 15A Feature • SM D • SMD • PRRSM • P r r sm Rating • High lo Rating-Small-RKG Main Use • • • • Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation Communication, Portable set

smd marking ce5

Abstract: Diode smd code sm Zener diode smd marking WE SMD cf5 SMD MARKING CODE CM5 Zener diode smd marking code am smd marking cj4 diode SMD CODE sm 17 smd diode marking sm 34 smd zener
Contextual Info: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,

smd diode marking sm 34

Contextual Info: Schottky Barrier Diode mtmm Single Diode o u t l in e M2FH3 30V 6A Feature 1Small SMD ' Super-Low V f = 0 .3 6 V • /JvS Ü S M D • tliafîV F = 0.36V Main Use • i K y z r U —jS JS K it • DC/DC n y j { - 5 > • Reverse connect protection for DC power source

6Bp SMD

Abstract: 6BT SMD W17 marking code sot 23 marking w18 sot23-5 marking code E5 SMD ic sot23-5 smd marking e5 5Pin smd marking sot23 W16 smd transistor 6Bp sot marking code w17 Z5238BLT1
Contextual Info: • The user can use the on-board clock source or provide 1.0 Design Description their own clock source and operate the ADC under various sampling frequencies ■ The analog input has two ports, one for single-ended sources and one for differential sources

Zener diode smd marking code WN

Abstract: smd code YC 228 smd zener diode code WH W8 smd code YC 447 z017 zener SMD WA Zener diode smd marking code wa marking code WL SMD zener CZRW5221B Zener diode smd marking code wp
Contextual Info: COAICHII» SMD Zener Diodes SMO D io d es Specialist CZRW52C2V4-G Thru Voltage 2.4 to 39 Volts Power 410 mWatts RoHS Device CZRW52C39-G S O D -1 2 3 Features • 4 10m W Power Dissipation • Zen er Voltages from 2 .4 ~ 3 9 V • P lanar Die Constructions.

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

DIODE smd marking 821

Abstract: smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology

Diode SMA marking code ye

Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
Contextual Info: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)

TRANSISTOR SMD MARKING CODE XI

Abstract: smd code marking LTRA TRANSISTOR SMD MARKING CODE s01 MARKING SMD PNP TRANSISTOR BV 1600H 6 pin TRANSISTOR SMD CODE XI SMD 6 PIN code marking SOM electrolytic capacitor smd code marking regulator smd marking smd code capacitor
Contextual Info: PRELIMINARY Semiconductor D ecem ber 1999 LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low -dropout and low noise in bat­

Contextual Info: Philips Semiconductors Product specification Low-voltage avalanche regulator double diodes FEATURES MARKING • V ery low dynam ic im pedance at low currents: a pproxim ately 1/ 20 of conventional series TYPE NUMBER • Hard breakdow n knee • Low noise: a pproxim ately 1/ 10 of

SMD RESISTOR 100 OHMS

Abstract: 101K capacitor ceramic SMD 1206 RESISTOR 0 OHMS smd schottky diode marking U2 2200 MF CAPACITOR 25v capacitor 2200 uf 25v GRM42-6X7R103M SMD 1206 RESISTOR 100 OHMS resistor smd capacitor 10 uF x 25v
Contextual Info: TL5001EVM-108/109/110 Assembly File Effective Date: 04/30/99 Current EVM Rev: B TEXAS INSTRUMENTS TL5001EVM-108/109/110 Assembly File Table of Contents Introduction. 3

Contextual Info: WL¡m H E W L E T T wLEM P A C K A R D Herm etically Sealed, Very High Speed, Logic Gate Optocouplers HCPL-540X* HCPL-643X 5962-89571 5962-89570 HCPL-543X Technical Data *See matrix for available extensions. Features • Dual Marked w ith Device Part Number and DSCC

Contextual Info: Schottky Barrier Diode Twin Diode mtm DF15SC4M O UTLINE U n it-m m Package : STO-220 W e ig h t 1 .5 g T y p P y K L l°-(ffl) 10.2 40V 1 5A m Feature a • SMD < SM D • T j= 1 5 0 °C 1Tj= 150°C • P rrsm 1 P r r s m R ating 1 High lo R ating -S m a ll-P K G

Contextual Info: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type ^DS b SPPX2N60S5 600 V 11.3 A 380 m il

PN03L03

Abstract: Q67042-S4055 Q67042-S4094
Contextual Info: SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level
Excellent Gate Charge x RDS(on) P- TO262 -3-1 P- TO263 -3-2 V 2.7 m
100 A P- TO220 -3-1

smd schottky diode marking 72

Abstract: smd schottky diode 82 smd diode schottky code marking 63 Diode SM 48 smd code MCC SMD DIODE smd diode marking sm 34
Contextual Info: DISCRETE SEMICONDUCTORS [M m SM EET 1PS79SB10 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES

2n03l08

Abstract: 2N03L08 2N03L08 smd G47 A140H INFINEON PART MARKING to263 D36A
Contextual Info: SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x RDS on P- TO262 -3-1 VDS 30 R DS(on) 8.4 m
ID 73 A P- TO263 -3-2 V P- TO220 -3-1 product (FOM)

Q67042-S4057

Contextual Info: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS
N-Channel RDS on
Enhancement mode ID
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance max. SMD version P- TO262 -3-1 V m

2N0807

Abstract: INFINEON PART MARKING to263
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode ID
175°C operating temperature P- TO262 -3-1
Avalanche rated max. SMD version P- TO263 -3-2 V 7.1 m
80 A P- TO220 -3-1

2N0807

Abstract: Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07 SPP80N08S2-07
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode
175°C operating temperature
Avalanche rated max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 V 7.1 m
80 A P- TO220 -3-1

2N03L13

Abstract: Q67042-S4104 2N03L SPB42N03S2L-13 M3024
Contextual Info: SPI42N03S2L-13 SPP42N03S2L-13,SPB42N03S2L-13 OptiMOS =Power-Transistor Product Summary Feature 30 VDS
N-Channel R DS on
Enhancement mode ID
Logic Level
Excellent Gate Charge x RDS(on) P- TO262 -3-1 V m
12.9 42 P- TO263 -3-2 A P- TO220 -3-1 product (FOM)

2N0807

Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
Contextual Info: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID

l4 tam SOT23

Abstract: smd diode L42 DIODE L44 82
Contextual Info: DISCRETE SEMICONDUCTORS BAT54 series Schottky barrier double diodes Product specification Supersedes data of 1996 Mar 19 Philips Semiconductors 1999 May 06 PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES

smd fl014

Abstract: FL014 FL014 Example transistor SMD FL014 EIA-541 IRFL014 IRFL4310 838 infra red i*l014 MARKING 93 SOT-223
Contextual Info: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier