SMD DIODE S 4 J Search Results

Contextual Info: Schottky Barrier Diode Single Diode m tm D3FS4A O UTLINE Unit-mm Weight 0.16g Typ Package : 2F iJV - F v - ^ thode m ark 40V 2.6A Feature • /J v P S M D • Small SMD • Tj=150°C • < S V f = 0 .4 5 V • Tj=150°C • Low V f = 0 . 4 5 V :ffiïiE

Contextual Info: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.

10SC4

Contextual Info: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM

D0214AC

Abstract: D0-214AC b20 diode diode d0214-ac diode sod57 telefunken sod57 l203
Contextual Info: VISHAY Vishay Telefunken ▼ Contents of a Diode in 1W SMD Package D0214AC Mold 50.4% 7 1 ,4 % S i0 2 26.0% epoxy resin 1.6% Sb (as antim ony trioxide) '" > 1.0% B r(n o T B A )* ) Traces of N, Fe, C, Cl Lead fram e, tinned (46.2%) 84.8% copper 9.3% iron

SMU25N05-45L

Abstract: SMD25N05-45L smu25n05 SMD25N05 SMD25N0545L
Contextual Info: Tem ic SMD/SMU25N05-45L Siliconix N-Channel Enhancement-Mode Transistors, Logic Level 175 °C Maximum Junction Temperature Product Summary VDS V 50 rDS(on) (Q) 0.045 Id 3 (A) 25 TO-251 TO -252 D Q o It o o— ^ Drain Connected to Tab G D S Top View Order Number:

DIODE smd marking uh

Abstract: cd4020
Contextual Info: Super Fast Recovery Diode Twin Diode mtm OUTLINE Package : STO-220 DF10LC20U Unit-mm Weight 1.5g Typ 10.2 O'/KB !J(M ) 200V 10A Feature • SMD Type No. • SMD • Low Noise •e y -rx • trr= 3 5 n s Polarity • trr=35ns 4.7 Main Use >DC/DC nytK—S

05N03

Abstract: 05N03LA IPB05N03LA JESD22 IPB05N03LAG
Contextual Info: IPB05N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

06n03la

Abstract: PG-TO-263-3-2 06N03 IPB06N03LA PG-TO263-3-2 06n03la datasheet, download JESD22
Contextual Info: IPB06N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 5.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

04N03LA

Abstract: IPB04N03LA IPI04N03LA IPP04N03LA
Contextual Info: IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level

06n03la

Abstract: 06n03la datasheet, download IPD06N03LA IPU06N03LA JESD22 P-TO252-3-11
Contextual Info: IPD06N03LA IPU06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID 50 A • N-channel • Logic level

diode g4l

Abstract: smd g4l SMD diode JB 4/5/32R2024/25/g4l smd
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE5S6M Unit-mm Weight 0.326g Typ 60V 5A Feature »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K —3>

06n03la

Abstract: 06n03la datasheet, download 06N03 06N03LA equivalent 06n03l IPD06N03LA IPU06N03LA IPS06N03LA IPF06N03LA P-TO252-3-11
Contextual Info: OptiMOS 2 Power-Transistor IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID 50 A • N-channel, logic level

05n03l

Abstract: 05N03 s4141 05N03LA Q67042-S4141 SMD MARKING CODE transistor IPB05N03LA IPI05N03LA IPP05N03LA
Contextual Info: IPB05N03LA IPI05N03LA, IPP05N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level

Contextual Info: Schottky Barrier Diode Twin Diode m w m OUTLINE DF30SC4M 40V 30A Feature • SMD • SMD • P rrsm7 K 5 V v i S ’ Œ • P rrsm Rating • High lo Rating'Small-PKG Main Use • DC/DC n y jt — p • m m .r-k .o A m s s • is m .tf- fz r ju m g • •

MJI-25

Contextual Info: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2

Contextual Info: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU

diode smd marking jy

Abstract: smd marking 9S
Contextual Info: Schottky Barrier Diode Single Diode mtmm M2FM3 o u tlin e 30V 6A Feature »/JvSÜSMD »Small SMD • Tj=150°C > V f=0.46V >Tj=150°C » Low V f=0.46V >S lR = 0 .2 m A ' Low Ir=0.2 itiA Main Use • K ï / J J —jSJÜKilt • Reverse connect protection for

transistor smd c5c

Abstract: transistor SMD R4d SMD diode C5C smd transistor r4D smd transistor R2C smd diode r4a MLQP48 smd transistor r4c r2d SMD Transistor IRS2093
Contextual Info: IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP8 Demo board;

1756 N2

Contextual Info: UM10508 230 V AC 17 W LED driver and dimmer Demo board using the SSL2102 Rev. 1 — 16 January 2012 User manual Document information Info Content Keywords SSL2102, AC mains supply, dimmable LED driver, AC/DC conversion Abstract This User manual describes a demonstration (demo) board for evaluating

smd g4l

Abstract: RC25C
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S6M Unit-mm Weight 0.326g Typ 60V 3A Feature • SM D »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K — 3>

smd diode marking YK

Contextual Info: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use

Contextual Info: VLMB41. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • High efficient InGaN technology • EIA and ICE standard package • Compatible with IR-reflow, vapor phase e3 and wave solder processes acc. to CECC 00802 and J-STD-020C • Available in 8 mm tape reel

MARKING CODE f5

Abstract: PMEG2015EV
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2015EV Low VF MEGA Schottky barrier diode Product specification Supersedes data of 2003 May 21 2003 Jun 03 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG2015EV PINNING

MHC310

Abstract: MHC-310 ua720 SMD MARKING E1 BAT960 EIAJ C-3 marking code b9 MHC311
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 May 01 Philips Semiconductors Product specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability