BAP50LX
Abstract: SMD MARKING CODE M 4 Diode
Text: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance
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BAP50LX
OD882T
sym006
BAP50LX
SMD MARKING CODE M 4 Diode
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SB520WT
Abstract: SMD DIODE ULTRA LOW VF
Text: SB520WT SCHOTTKY BARRIER DIODE Features • Ultra small SMD package • Very low forward voltage PINNING Applications • Ultra high speed switching • Voltage clamping • Low current rectification Absolute Maximum Ratings Ta = 25 OC Parameter DESCRIPTION
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SB520WT
OD-523
OD-523
SB520WT
SMD DIODE ULTRA LOW VF
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DIODE S4 08
Abstract: smd diode 891 BA891 DIODE S4 65 smd diode S4 S4 DIODE ultra low forward voltage diode diode s4 smd diode nh smd diode JS
Text: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners
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BA891
OD523
SC-79
DIODE S4 08
smd diode 891
DIODE S4 65
smd diode S4
S4 DIODE
ultra low forward voltage diode
diode s4
smd diode nh
smd diode JS
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very low reverse current
Abstract: ultra low forward voltage diode
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • Very low forward voltage • Very low reverse current • Guard ring protected • Ultra small SMD package. Applications • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes
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1SS06AWT
OD-523
very low reverse current
ultra low forward voltage diode
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Untitled
Abstract: No abstract text available
Text: Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits.
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BA891
OD523
SC-79
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1a6h
Abstract: SF1A600H MARK smd diode general semiconductor
Text: SF1A600H Semiconductor Ultra Fast Recovery Diode Applications • High speed switching and rectification • Switching mode power supply Features • Ultra-fast reverse recovery time: trr=35ns Max. • Small & compact type SMD package • Low reverse current & low switching loss
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SF1A600H
OD-106
KSD-D6A006-000
1a6h
SF1A600H
MARK smd diode general semiconductor
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Untitled
Abstract: No abstract text available
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • • • • Very low forward voltage Very low reverse current Guard ring protected Ultra small SMD package. Applications • • • • • Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes
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1SS06AWT
OD-523
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Untitled
Abstract: No abstract text available
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • • • • Very low forward voltage Very low reverse current Guard ring protected Ultra small SMD package. Applications • • • • • Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes
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1SS06AWT
OD-523
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MARK smd diode general semiconductor
Abstract: SF1A200H
Text: SF1A200H Semiconductor Ultra Fast Recovery Diode Applications • High speed switching and rectification • Switching mode power supply Features • Ultra-fast reverse recovery time: trr=30ns Max. • Small & compact type SMD package • Low forward voltage & low reverse current
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SF1A200H
OD-106
KSD-D6A004-000
MARK smd diode general semiconductor
SF1A200H
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Untitled
Abstract: No abstract text available
Text: SF1A200H Semiconductor Ultra Fast Recovery Diode Applications • High speed switching and rectification • Switching mode power supply Features • Ultra-fast reverse recovery time: trr=30ns Max. • Small & compact type SMD package • Low forward voltage & low reverse current
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SF1A200H
OD-106
KSD-D6A004-000
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NXP date code marking
Abstract: No abstract text available
Text: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits Low diode capacitance Low diode forward resistance
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BAP50LX
OD882D
sym006
BAP50LX
DFN1006D-2
NXP date code marking
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smd code marking book
Abstract: diode SMD MARKING CODE S
Text: 1SS06AWT SCHOTTKY BARRIER DIODE Features • Very low forward voltage • Very low reverse current • Ultra small SMD package PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 J Applications • Ultra high-speed switching • Voltage clamping • Protection circuits
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1SS06AWT
OD-523
OD-523
smd code marking book
diode SMD MARKING CODE S
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SMD MARKING CODE sg
Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Text: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top
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SB520WT
OD-523
OD-523
SMD MARKING CODE sg
diode MARKING CODE sg
smd diode marking sG
MARKING CODE sg 06
diode sg 01
diode smd marking code SG
SG DIODE MARKING
diode smd code SG
sg smd code
smd "code rc" transistor
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
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M3D319
1PS79SB10
SC-79
MAM403
SC-79)
SCA60
115104/00/01/pp8
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diode 1a4h
Abstract: No abstract text available
Text: SF1A400H Semiconductor Ultra Fast Recovery Diode Applications • General rectification • Switching mode power supply Features • Ultra-fast reverse recovery time: trr=30ns Max. • Small & compact type SMD package • Low switching loss Ordering Information
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SF1A400H
SF1A400H
OD-106
KSD-D6A008-001
diode 1a4h
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transistor smd zy
Abstract: BAS116T SC-75 MLB754
Text: BAS116T Single low leakage current switching diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic package.
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BAS116T
OT416
SC-75)
AEC-Q101
BAS116T
transistor smd zy
SC-75
MLB754
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1PS79SB10
Abstract: M3D319 1PS79SB10/DG115
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product data sheet 1998 Jul 16 NXP Semiconductors Product data sheet Schottky barrier diode 1PS79SB10 ; FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
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M3D319
1PS79SB10
SC-79
MAM403
SC-79)
115104/00/01/pp7
1PS79SB10
M3D319
1PS79SB10/DG115
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smd schottky diode marking 72
Abstract: ultra low forward voltage diode smd marking marking 72 smd marking 35 smd symbols SMD VR JEDEC SC-70 Low Forward Voltage Diode schottky diode
Text: Diodes SMD Type Schottky barrier diode 1PS70SB20 Features Ultra high switching speed Low forward voltage Guard ring protected Small SMD plastic package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Continuous reverse voltage VR
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1PS70SB20
OT323
SC-70)
smd schottky diode marking 72
ultra low forward voltage diode
smd marking
marking 72
smd marking 35
smd symbols
SMD VR
JEDEC SC-70
Low Forward Voltage Diode
schottky diode
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Untitled
Abstract: No abstract text available
Text: BAT760WS SCHOTTKY BARRIER DIODE Features • Ultra high-speed switching • Very low forward voltage • Very small SMD plastic package Applications • Ultra high-speed switching • Voltage clamping • Protection circuits Absolute Maximum Ratings Ta = 25 OC
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BAT760WS
OD-323
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Untitled
Abstract: No abstract text available
Text: BAT760WS SCHOTTKY BARRIER DIODE Features • Ultra high-speed switching • Very low forward voltage • Very small SMD plastic package Applications • Ultra high-speed switching • Voltage clamping • Protection circuits Absolute Maximum Ratings Ta = 25 OC
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BAT760WS
OD-323
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D319 1PS79SB31 Schottky barrier diode Product data sheet 2002 Jan 11 NXP Semiconductors Product data sheet Schottky barrier diode 1PS79SB31 ; FEATURES • Very low forward voltage • Guard ring protected • Ultra small SMD package.
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M3D319
1PS79SB31
MAM403
OD523
SC-79)
613514/01/pp7
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smd diode marking T1
Abstract: marking t1 1PS79SB63 capacitance diode marking T1 SMD MARKING smd marking 35 smd marking T1 SMD Packages
Text: Diodes SMD Type Schottky barrier diodes 1PS79SB63 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features Very low diode capacitance + +0.1 0.6-0.1 - Very low forward voltage +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Ultra small SMD plastic packages.
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1PS79SB63
OD-523
77max
07max
smd diode marking T1
marking t1
1PS79SB63
capacitance diode marking T1
SMD MARKING
smd marking 35
smd marking T1
SMD Packages
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smd diode a7
Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Text: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output
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OCR Scan
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DF30PC3M
STO-220
smd diode a7
schottky diode marking A7
diode marking H2
5011s
smd marking 5G
smd marking a7
DF30PC3M
marking A7 diode
SHINDENGEN DIODE
A7 diode smd
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm DF40PC3 o u t lin e 30V 40A Feature • SMD • SMD • ÎS <6V f =0.4V • Ultra-Low Vf=0.4V • High lo Rating'Small-PKG Main Use • Reverse connect protection for DC power source • D C tti^ O R Œ • D C /D C o y <-•$>
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OCR Scan
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DF40PC3
50Ilz
J532-1)
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