SMD JM TRANSISTOR Search Results

transistor smd MJ 145

Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Contextual Info: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter

smd transistor 43t

Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
Contextual Info: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018

Contextual Info: CHIP PHOTO-TRANSISTOR CmSENSOR mum ’\ .* y 7 M 7 x ^ :ÿyyx$-c±miBi • Features 1. Developed as a chip type SMD phot-transistor for both reverse and top surface mounting 2. Small and square size, dim ensions : 3 ,2 L x 1.6(W)X1,1 (H)mm 2. ^- -Î;ïl3;3.e(L)xl.6(W)xl.i(H)

smd transistor 2Bs

Abstract: GEm501 smd transistor 68t BLV2040
Contextual Info: Philips Semiconductors Preliminary specification UHF power transistor BLV2040 FEATURES APPLICATIONS • Emitter ballasting resistors for optimum temperature profile • Common emitter class-AB operation in base stations in the 1800 to 1970 MHz frequency range.

GROUND BASED RADAR

Abstract: transistor SMD R1D
Contextual Info: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications

kd smd transistor

Abstract: smd transistor wc LG Philips LM 300 W 01
Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope

lg smd transistor LF

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a plastic envelope suitable for surface mounting using ’trench’ technology. The device

20n60s5

Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751
Contextual Info: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘

VPT09051

Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
Contextual Info: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity

transistor 8BB smd

Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
Contextual Info: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated

diode gee a9

Abstract: HTC one m7
Contextual Info: SPP 47N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level

Transistor SMD SM 942

Contextual Info: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30

FDS 4800

Abstract: smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 BUZ111SL TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457
Contextual Info: BUZ 111SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f l DS on 0.007 n A 80 t> Continuous drain current • Avalanche rated 55 V • Logic Level

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd
Contextual Info: Infineo n |m p ,° v e d technologies f c — BUZ 104SL • SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance f l DS on • Avalanche rated Continuous drain current

HS-OP470ARH

Contextual Info: HS-OP470ARH CB Radiation Hardened, Very Low Noise Quad Operational Amplifier February 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-OP470ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance

smd transistor 43t

Abstract: buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds P-T0263-3-2 infineon 3330 BUZ 1025 E304
Contextual Info: Infineon , m proved te c h n o lo g ie s BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current CO Features 55 V ñ DS on 0.018 Í 2

smd transistor HX

Abstract: TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES
Contextual Info: Ordering Nomenclature Guides 2 2-3 Elantec TYPES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4 5962 SMD/DSCC - QML TYPES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VPT09050

Abstract: *08P06P transistor SMD 352
Contextual Info: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3

Contextual Info: Philips Semiconductors Small-signal Transistors General THERMAL CONSIDERATIONS The elements of thermal resistance shown in Fig.8 are defined as follows: Thermal resistance Circuit performance and long-term reliability are affected by the temperature of the transistor die. Normally, both are

11n06

Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
Contextual Info: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance

Contextual Info: SPD28N03 SPU28N03 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • övlöt rated • 175°C operating temperature Type ^DS SPD28N03 30 V b 28 A Pin 1 Pin 2 Pin 3 G D S Package f f DS on (à) VGS 0.023 Q, ^GS = 10 V P-T0252

Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

SMD Transistor t30

Abstract: transistor SMD t30
Contextual Info: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level

Contextual Info: Product specification Philips Semiconductors N-channel TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Logic level compatible