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    SMD TRANSISTOR 2D Search Results

    SMD TRANSISTOR 2D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 2D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2d SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor 2d SMD TRANSISTOR MARKING 2D smd TRANSISTOR code marking 05 sot23 MARKING CODE SMD IC smd TRANSISTOR code marking 2d 2D SMD TRANSISTOR TRANSISTOR SMD MARKING CODE transistor smd marking 2d
    Text: SMD High Voltage Transistor PNP MMBTA92 SMD High Voltage Transistor (PNP) Features • This device is designed for high voltage driver applications • RoHS compliance SOT-23 Mechanical Data SOT-23, Plastic Package Case: Terminals: Weight: Solderable per MIL-STD-202G, Method 208


    Original     		PDF MMBTA92 OT-23 OT-23, MIL-STD-202G, 2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d smd transistor 2d SMD TRANSISTOR MARKING 2D smd TRANSISTOR code marking 05 sot23 MARKING CODE SMD IC smd TRANSISTOR code marking 2d 2D SMD TRANSISTOR TRANSISTOR SMD MARKING CODE transistor smd marking 2d

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2d SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89
    Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PXTA92 SC-62) PXTA42. AEC-Q101 2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89

    2d SMD PNP TRANSISTOR

    Abstract: 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d
    Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PXTA92 SC-62) PXTA42. AEC-Q101 2d SMD PNP TRANSISTOR 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PXTA92 SC-62) PXTA42. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4130PAN DFN2020-6 OT1118) PBSS4130PANP. PBSS5130PAP. AEC-Q101

    2d SMD PNP TRANSISTOR

    Abstract: SMD TRANSISTOR MARKING 2D a93 smd smd transistor 2d transistor A92 smd marking cb SOT23 transistor smd TRANSISTOR 2D SOT23 SMD TRANSISTOR MARKING 2e 2d SMD TRANSISTOR CMBT A92 2d sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBTA92 CMBTA93 C-120 2d SMD PNP TRANSISTOR SMD TRANSISTOR MARKING 2D a93 smd smd transistor 2d transistor A92 smd marking cb SOT23 transistor smd TRANSISTOR 2D SOT23 SMD TRANSISTOR MARKING 2e 2d SMD TRANSISTOR CMBT A92 2d sot-23

    2d SMD PNP TRANSISTOR

    Abstract: smd a92 A93 SMD SMD TRANSISTOR MARKING 2D 2d SMD TRANSISTOR smd transistor marking A92 A92 SMD SMD TRANSISTOR MARKING 2e transistor smd marking 2d transistor A92
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBTA92 CMBTA93 C-120 2d SMD PNP TRANSISTOR smd a92 A93 SMD SMD TRANSISTOR MARKING 2D 2d SMD TRANSISTOR smd transistor marking A92 A92 SMD SMD TRANSISTOR MARKING 2e transistor smd marking 2d transistor A92

    2d SMD PNP TRANSISTOR

    Abstract: SMD TRANSISTOR MARKING 2D A93 SMD smd marking cb SOT23 transistor CMBTA92 CMBTA93 marking A93 2D SMD TRANSISTOR smd a92
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D


    Original     		PDF OT-23 CMBTA92 CMBTA93 C-120 2d SMD PNP TRANSISTOR SMD TRANSISTOR MARKING 2D A93 SMD smd marking cb SOT23 transistor CMBTA92 CMBTA93 marking A93 2D SMD TRANSISTOR smd a92

    FMMT5087

    Abstract: marking 2M
    Text: Transistors IC SMD Type Small Signal Transistor FMMT5087 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF FMMT5087 OT-23 -10mA, -100mA, -500mA, 20MHz 15KHz 140MHz, FMMT5087 marking 2M

    Q67042-S4057

    Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
    Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking


    Original     		PDF SPP100N03S2-03 SPB100N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4058 PN0303 P-TO263-3-2 Q67042-S4057 Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303

    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB200EN 100 V N-channel Trench MOSFET 30 May 2013 Objective data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB200EN DFN2020MD-6 OT1220)

    2N0605

    Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
    Text: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55


    Original     		PDF SPI80N06S2-05 SPP80N06S2-05 SPB80N06S2-05 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N06S2-05 Q67040-S4245 2N0605 2N0605 SPI80N06S2-05 SPB80N06S2-05 2N060

    Q67042-S4057

    Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPP100N03S2-03 Q67042-S4058 Q67042-S4057 PN0303 Q67042-S4116 Q67042-S4057 ANPS071E SPB100N03S2-03 SPI100N03S2-03 PN0303 Q67042-S4058

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    Q67060-S6038

    Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
    Text: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID


    Original     		PDF SPP100N04S2L-03 SPB100N04S2L-03 P-TO263-3-2 P-TO220-3-1 SPP100N04S2L-03 Q67060-S6038 PN04L03 SPB100N04S2L-03 Q67060-S6038 Diode 1_b SMD PN04L03

    pn06l05

    Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
    Text: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4


    Original     		PDF SPP100N06S2L-05 SPB100N06S2L-05 P-TO263-3-2 P-TO220-3-1 SPP100N06S2L-05 Q67060-S6043 PN06L05 SPB100N06S2L-05 pn06l05 SPB100N06S2L05 Q67060-S6042

    2n0303

    Abstract: INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03 SPP80N03S2-03
    Text: SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance


    Original     		PDF SPI80N03S2-03 SPP80N03S2-03 SPB80N03S2-03 SPP80N03S2-03 Q67040-S4247 Q67040-S4258 2N0303 Q67042-S4079 2n0303 INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03

    Q67042-S4057

    Abstract: No abstract text available
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS  N-Channel RDS on  Enhancement mode ID  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance max. SMD version P- TO262 -3-1 V m


    Original     		PDF SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPB100N03S2-03 Q67042-S4058 Q67042-S4057 Q67042-S4116 PN0303

    2N04L03

    Abstract: SPB80N04S2L-03 SPP80N04S2L-03
    Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1


    Original     		PDF SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 Q67040-S4261 Q67040-S4262 2N04L03 SPB80N04S2L-03 SPP80N04S2L-03

    2n0404

    Abstract: ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 SPP80N04S2-04 DSA003760
    Text: SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS on max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2


    Original     		PDF SPI80N04S2-04 SPP80N04S2-04 SPB80N04S2-04 SPP80N04S2-04 Q67040-S4260 2N0404 Q67040-S4257 2n0404 ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 DSA003760

    2n0404

    Abstract: SPB80N04S2-04 SPP80N04S2-04
    Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1


    Original     		PDF SPP80N04S2-04 SPB80N04S2-04 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4260 P-TO263-3-2 Q67040-S4257 2n0404 SPB80N04S2-04 SPP80N04S2-04

    Untitled

    Abstract: No abstract text available
    Text: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA


    OCR Scan     		PDF b53T31 BLT80