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    SMD TRANSISTOR 720 Search Results

    SMD TRANSISTOR 720 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 720 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PBSS4580PA

    Abstract: No abstract text available
    Text: PBSS4580PA 80 V, 5.6 A NPN low VCEsat BISS transistor Rev. 01 — 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4580PA OT1061 PBSS5580PA. PBSS4580PA

    Untitled

    Abstract: No abstract text available
    Text: PBSS4580PA 80 V, 5.6 A NPN low VCEsat BISS transistor Rev. 01 — 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4580PA OT1061 PBSS5580PA. PBSS4580PA

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKT OT416 SC-75)

    NX3020NAK

    Abstract: No abstract text available
    Text: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKW OT323 SC-70) NX3020NAK

    nx3020

    Abstract: No abstract text available
    Text: NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKT OT416 SC-75) nx3020

    Untitled

    Abstract: No abstract text available
    Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAKS OT363 SC-88)

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKW OT323 SC-70)

    720 TRANSISTOR smd sot-223

    Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
    Text: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2


    Original     		PDF KSP92 OT-223 720 TRANSISTOR smd sot-223 KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd

    MYXS00650-07DA0

    Abstract: silicon carbide
    Text: SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 Product Overview Features y r a in Benefits • High voltage 650V • Low on resistance RDS On • High current 7A • Voltage controlled • High temperature 210°C • Low gate charge


    Original     		PDF MYXS00650-07DA0 MIL-PRF-19500 MYXS00650-07DA0 silicon carbide

    Untitled

    Abstract: No abstract text available
    Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAKS OT363 SC-88)

    transistor 720 smd

    Abstract: FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot
    Text: Transistors IC SMD Type Switching Transistor FMMT720 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 IC CONT 2.5A. 1 0.55 625mW power dissipation. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 IC up to 10A peak pulse current. +0.05 0.1-0.01


    Original     		PDF FMMT720 OT-23 625mW -50mA -100mA -75mA -10mA, -50mA 100MHz -20mA transistor 720 smd FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot

    2n03l

    Abstract: 2n03l03 2N03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4259
    Text: SPP80N03S2L-03 SPB80N03S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on max. SMD version 2.8 mΩ ID 80 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM)


    Original     		PDF SPP80N03S2L-03 SPB80N03S2L-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4248 2N03L03 P-TO263-3-2 2n03l 2n03l03 2N03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4259

    C67078-S1355-A2

    Abstract: BUZ 32 SMD
    Text: BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS on


    Original     		PDF O-220 C67078-S1355-A2 C67078-S1355-A2 BUZ 32 SMD

    DIODE SMD 10A

    Abstract: 2SJ599 78 DIODE SMD smd transistor 26 S6075
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ599 Features TO-252 Low on-resistance +0.15 6.50-0.15 +0.2 5.30-0.2 MAX. VGS =-10 V, ID = -10 A RDS(on)2 = 110 m +0.15 1.50-0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 MAX. (VGS = -4.0 V, ID =-10 A) 2.3 +0.1


    Original     		PDF 2SJ599 O-252 --10A DIODE SMD 10A 2SJ599 78 DIODE SMD smd transistor 26 S6075

    SMD Transistors nc

    Abstract: SMD Transistor nc smd transistor QG smd diode Mu smd transistor ds 65 2SK3295 smd diode 18.A SMD Transistor MU
    Text: Transistors IC SMD Type MOS Field Effect Transistor 2SK3295 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 QG = 16 nC TYP. ID = 35 A, VDD = 16 V, VGS = 10 V 0.1max +0.1 1.27-0.1 Surface mount device available


    Original     		PDF 2SK3295 O-263 SMD Transistors nc SMD Transistor nc smd transistor QG smd diode Mu smd transistor ds 65 2SK3295 smd diode 18.A SMD Transistor MU

    6a smd transistor

    Abstract: transistor smd 6a equivalent smd mosfet PD-23 2SJ598 smd 6a transistor smd transistor 720 102-130 mosfet VDS 30V ID 6A TO 252
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ598 TO-252 RDS on 2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A) Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.28 1.50-0.1 Built-in gate protection diode +0.15 0.50-0.15


    Original     		PDF 2SJ598 O-252 6a smd transistor transistor smd 6a equivalent smd mosfet PD-23 2SJ598 smd 6a transistor smd transistor 720 102-130 mosfet VDS 30V ID 6A TO 252

    74 hc 59581

    Abstract: b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16
    Text: 717 Technical portal and online community for Design Engineers - www.element-14.com Semiconductor Hardware & Thermal Management Page Page 727 725 725 732 739 732 749 736 725 724 723 723 724 721 720 722 726 752 728 751 Crystal Oscillator Sockets . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 74 hc 59581 b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16

    transistor smd R11

    Abstract: TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23
    Text: NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB High Intensity LED Drivers Using NCP3065/NCV3065 Evaluation Board User's Manual Introduction http://onsemi.com EVAL BOARD USER’S MANUAL High brightness LEDs are a prominent source of light and have better efficiency and reliability than conventional light


    Original     		PDF NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB NCP3065/NCV3065 EVBUM2155/D transistor smd R11 TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23

    smd transistor Q5

    Abstract: SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc
    Text: AND8298 High Intensity LED Drivers Using NCP3065/NCV3065 Prepared by: Petr Konvicny ON Semiconductor http://onsemi.com Introduction High brightness LEDs are a prominent source of light and have better efficiency and reliability than conventional light sources. Improvements in high brightness LEDs present the


    Original     		PDF AND8298 NCP3065/NCV3065 AND8298/D smd transistor Q5 SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc

    smd transistor K2 pnp digital

    Abstract: BC817-LT1G k2 smd transistor EEEVFK1H221P transistor smd j6 AND8298 Nu SmD TRANSISTOR smd transistor J6 smd transistor 015 G 4.7 MF 50v CAPACITOR SMD
    Text: AND8298 High Intensity LED Drivers Using NCP3065/NCV3065 Prepared by: Petr Konvicny ON Semiconductor http://onsemi.com Introduction High brightness LEDs are a prominent source of light and have better efficiency and reliability than conventional light sources. Improvements in high brightness LEDs present the


    Original     		PDF AND8298 NCP3065/NCV3065 AND8298/D smd transistor K2 pnp digital BC817-LT1G k2 smd transistor EEEVFK1H221P transistor smd j6 AND8298 Nu SmD TRANSISTOR smd transistor J6 smd transistor 015 G 4.7 MF 50v CAPACITOR SMD

    702 TRANSISTOR smd

    Abstract: smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code
    Text: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv^di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ101L Vbs 50V *> 29 A RaS on


    OCR Scan     		PDF O-220 BUZ101L C67078-S1355-A2 702 TRANSISTOR smd smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code

    smd diode T42

    Abstract: smd transistor 718
    Text: SIEMENS BUZ 102AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • di//di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL Vds 50 V b flDS on


    OCR Scan     		PDF 102AL O-220 C67078-S1356-A2 l45bfi fl23Sb05 235bOS smd diode T42 smd transistor 718

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dy/d? rated • Low on-resistance • t7 5 °C operating temperature Pin 1 Pin 2 Pin 3 • also in TO-220 SMD available Type BUZ 101L Vds


    OCR Scan     		PDF O-220 C67078-S1355-A2 fl235bD5 00fl455E

    smd transistor 718

    Abstract: 42AL bss 97 transistor
    Text: SIEMENS B U Z 102A L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL VÒS 50 V b 42 A


    OCR Scan     		PDF O-220 102AL C67078-S1356-A2 smd transistor 718 42AL bss 97 transistor