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    SMD TRANSISTOR G1 Search Results

    SMD TRANSISTOR G1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR G1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    TRANSISTOR SMD MARKING g1

    Abstract: CMBT5551 smd transistor g1
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT5551 C-120 TRANSISTOR SMD MARKING g1 CMBT5551 smd transistor g1

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT5551 C-120

    TRANSISTOR SMD MARKING g1

    Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120 TRANSISTOR SMD MARKING g1 SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMCXB900UE DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAKS OT363 SC-88)

    TSSOP-6

    Abstract: marking 34 TSSOP6 NXP smd marking Yd
    Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 18 April 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMGD290UCEA OT363 AEC-Q101 TSSOP-6 marking 34 TSSOP6 NXP smd marking Yd

    smd diode marking 2U

    Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
    Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB95XNE DFN2020-6 OT1118) smd diode marking 2U smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd

    Untitled

    Abstract: No abstract text available
    Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMGD290UCEA OT363 AEC-Q101

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: PMDPB38UNE 20 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB38UNE DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    smd transistor marking g1

    Abstract: TRANSISTOR SMD MARKING g1 smd transistor g1
    Text: Transistors Transistor T SMD Type Product specification KMBT5551 MMBT5551 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Pb-Free Packages are Available 1 0.55 High Voltage Transistors +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base


    Original     		PDF KMBT5551 MMBT5551) OT-23 100MHz smd transistor marking g1 TRANSISTOR SMD MARKING g1 smd transistor g1

    TSSOP-8 footprint

    Abstract: KI8205A g1 smd transistor SMD TRANSISTOR G1 MOSFET TSSOP-8 dual n-channel smd transistor S1 1A smd mosfet 78 DIODE SMD MOSFET TSSOP-8 smd diode JC
    Text: MOSFET SMD Type Dual N-Channel Enhancement Mode Field Effect Transistor KI8205A TSSOP-8 Features Unit: mm ● Small footprint due to small and thin package ● Low drain-source ON resistance: r DS on = 0.025 @ VGS = 4.5 V Max rDS(on) = 0.029 @ VGS = 2.5V Max


    Original     		PDF KI8205A TSSOP-8 footprint KI8205A g1 smd transistor SMD TRANSISTOR G1 MOSFET TSSOP-8 dual n-channel smd transistor S1 1A smd mosfet 78 DIODE SMD MOSFET TSSOP-8 smd diode JC

    TRANSISTOR SMD MARKING CODE 1v

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB30XN DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE 1v NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF NX7002BKXB DFN1010B-6 OT1216)

    mosfet SMD MARKING CODE 352

    Abstract: No abstract text available
    Text: PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMGD130UN OT363 mosfet SMD MARKING CODE 352

    Untitled

    Abstract: No abstract text available
    Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAKS OT363 SC-88)

    MOSFET TRANSISTOR SMD MARKING CODE 11

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB950UPE DFN1010B-6 OT1216)

    nxp pmgd780sn

    Abstract: PMGD780SN
    Text: PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF PMGD780SN OT363 SC-88) PMGD780SN nxp pmgd780sn

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB760EN DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    SMD Transistor g16

    Abstract: marking G16 marking g16 sot23 g16 sot23 smd transistor marking 26 smd transistor 26 2SK1590 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1590 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply. 0.4


    Original     		PDF 2SK1590 OT-23 SMD Transistor g16 marking G16 marking g16 sot23 g16 sot23 smd transistor marking 26 smd transistor 26 2SK1590 5V GATE TO SOURCE VOLTAGE MOSFET

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKV OT666 AEC-Q101