SMD TRANSISTOR MARKING IP Search Results

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

04N03LA

Abstract: IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

"marking E1"

Abstract: BFS17R BFS17 d 1556 transistor
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

SMD TRANSISTOR MARKING code TC

Abstract: SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE IPP65R190C6 IPB65R190C6 Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6

65E6190

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6

65E6190

Abstract: diode smd E6 smd diode E6 Diode SMD SJ 19 Diode type SMD marking SJ IPW65R190E6 IPP65R190E6 MOSFET TRANSISTOR SMD MARKING CODE 11 smd marking code E6 ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R310E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R310E6 1Description ThinPAK8x8

IPL65R660E6

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R660E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R660E6 1Description ThinPAK8x8

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R165CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R165CFD 1Description

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R340CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R340CFD 1Description

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R420E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R420E6 1Description ThinPAK8x8

65E6190

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R190E6 DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R190E6 1Description ThinPAK8x8

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R460CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R460CFD 1Description

Contextual Info: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

6r3k3c6

Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

6r2k0c6

Abstract: IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

6r1k4c6

Abstract: IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R1K4C6 Data Sheet Rev. 2.0, 2010-07-19 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,