SMD TRANSISTOR YH Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

marking s20 SMD Transistor

Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
Contextual Info: 62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

transistor SMD g 28

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

ROGERS DUROID 6002

Contextual Info: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 2 — 10 February 2014 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range.

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

Contextual Info: BLP10H605 Broadband LDMOS driver transistor Rev. 2 — 18 April 2014 Objective data sheet 1. Product profile 1.1 General description A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1.

Contextual Info: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications at 1030 MHz. Table 1. Test information

Contextual Info: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.

Contextual Info: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.

Technical Specifications of DVB-T2 Transmitter

Contextual Info: BLP10H610 Broadband LDMOS driver transistor Rev. 2 — 22 April 2014 Objective data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1.

Contextual Info: BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

Contextual Info: BLF888D; BLF888DS UHF power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter

Contextual Info: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 2 — 22 April 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Contextual Info: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 3 — 26 June 2013 Product data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

transistor 742

Abstract: j494 transistor blf8g22ls
Contextual Info: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

transistor j241

Abstract: transistor j239 J241 transistor
Contextual Info: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 2 — 10 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

PCE3667CT-ND

Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

SOT1227A

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

GRM32ER71H106KA88L

Contextual Info: BLP7G22-10 LDMOS driver transistor Rev. 2 — 30 May 2013 Product data sheet 1. Product profile 1.1 General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance multiple frequencies

Contextual Info: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

ATC 600F

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 3 — 27 March 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.