smd zd 15
Abstract: Rogers 4350 8B10B
Text: ERmet ZD High Speed Differential Hard Metric Connector System www.erni.com Proposal for a System Simulation including the ERNI ERmet ZD Connector This is a proposal for a system simulation scenario of a high speed data communication backplane system. The goal of this investigation is to
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smd diode c615
Abstract: sanyo electrolytic capacitors schematic SMPS 12V 20A AN1135 L6911B SO20 6MV1000GX T44-52 smps using SCR smps 5v Power Supply Schematic Diagram
Text: AN1135 APPLICATION NOTE DESIGNING WITH L6911B, 5 BIT STEP DOWN CONTROLLER The increase of computing capability and the consequential rising in complexity of modern microprocessors have lead to the reduction of the supply voltages, the increase of the clock frequency and of
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AN1135
L6911B,
L6911B
smd diode c615
sanyo electrolytic capacitors
schematic SMPS 12V 20A
AN1135
SO20
6MV1000GX
T44-52
smps using SCR
smps 5v Power Supply Schematic Diagram
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Untitled
Abstract: No abstract text available
Text: Soldering Tools Soldering Tips for EP5 and ZD-937 TIP/ZD-93708 Part No. JFS 12V/30W Soldering Pencil with cigarette lighter connector. Suitable tip: Startec 3mm. Dimensions: diameter 19mm lenght 220mm Power: 30 W Power Supply: 12 VDC TIP/ZD-93716 Ord.No. Description
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ZD-937
TIP/ZD-93708
2V/30W
220mm
TIP/ZD-93716
2V/30W
ZD-200N
HROT/ZD-93732
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2SA1945
Abstract: marking z*d
Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter
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2SA1945
150MHz
600mA
-100mA
-200mA
-10mA
2SA1945
marking z*d
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Untitled
Abstract: No abstract text available
Text: IC SMD Type Product specification 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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2SA1945
150MHz
600mA
-100mA
-200mA
-10mA
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Untitled
Abstract: No abstract text available
Text: ERmet ZD Application Note Version 1.1 Technical Features The ERmet ZD is specifically designed for high speed differential signaling in telecom applications at data rates of up to 5 Gbit/s. This robust, high performance, modular connector system is also designed to be used in conjunction with the 2mm
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Untitled
Abstract: No abstract text available
Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date: 7/15/2003 REV. NO: 1
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TZ0235A
FR-71S03-01
30sec.
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ersa ms 8000
Abstract: ersa SMD-8002 8002 smd 9612-PROZFP1 E 97877 fmkanc 32-005 ersa 60 13SIE rework 80
Text: Prozeßbeschreibung: FINE-PITCH INSTALLATION ¬ 212 MS ERSA Micro Wave Lötspitze Originalgröße Prozeßbeschreibung: 1. Stecken Sie die ERSA Micro Wave Lötspitze ¬ auf Ihren Micro tool (bzw. CTA 20) und stellen Sie eine Spitzentemperatur von 285-295°C ein.
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15MM0100HF
ersa ms 8000
ersa
SMD-8002
8002 smd
9612-PROZFP1
E 97877
fmkanc 32-005
ersa 60
13SIE
rework 80
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16v8d
Abstract: gal 20v8 programming specification gal programming specification 16v8 PLD 74xx244 PLD programming gal programming 22v10 pal 24 input GAL lattice 22v10 programming
Text: Introduction to GAL Devices February 2002 Overview Lattice, the inventor of the Generic Array Logic GAL family of low density, E2CMOS® PLDs is the leading supplier of low density CMOS PLDs in the world. Features such as industry leading performance, full reprogrammability, low power consumption, 100% testability and 100% programming yields make the GAL family the preferred
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MIL-STD-883)
GAL20V8
GAL20VP8
GAL22V10
GAL20XV10
ispGAL22V10
GAL26CV12
GAL6001
GAL6002
16v8d
gal 20v8 programming specification
gal programming specification
16v8 PLD
74xx244
PLD programming
gal programming
22v10 pal
24 input GAL
lattice 22v10 programming
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74xx244
Abstract: 16v8d GAL16LV8 GAL16LV8ZD GAL16VP8 GAL20LV8 GAL20LV8ZD GAL20VP8
Text: Introduction to Generic Array Logic GAL6001/6002 , 64mA high output drive GAL16VP8 and GAL20VP8), “zero power” operation (GAL16V8Z/ZD and GAL20V8Z/ZD), and in-system programmability (ispGAL22V10). Overview Lattice Semiconductor Corporation (LSC), the inventor
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GAL6001/6002)
GAL16VP8
GAL20VP8)
GAL16V8Z/ZD
GAL20V8Z/ZD)
ispGAL22V10)
GAL20V8
GAL20VP8
GAL20XV10
GAL22V10
74xx244
16v8d
GAL16LV8
GAL16LV8ZD
GAL20LV8
GAL20LV8ZD
GAL20VP8
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introduction gal pal lattice
Abstract: 16v8d smd zd 15 16LV8D PAL20L10 LATTICE
Text: Introduction to GAL and PAL Devices ® output drive GAL16VP8 and GAL20VP8 , “zero power” operation (GAL16V8Z/ZD and GAL20V8Z/ZD), and insystem programmability (ispGAL22V10). Overview Lattice, the inventor of the Generic Array Logic (GAL®) and Programmable Array Logic™ (PAL®) families of low
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MIL-STD-883)
GAL16VP8
GAL20VP8)
883/Military
GAL16V8Z
ispGAL22V10
ispGAL22LV10
introduction gal pal lattice
16v8d
smd zd 15
16LV8D
PAL20L10 LATTICE
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smd transistor 7D
Abstract: No abstract text available
Text: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4269 Version 2.0 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low down to VQ = 1 V Overtemperature protection Reverse polarity proof
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Q67000-A9190
067006-A9173
Q67006-A9288
P-DSO-14-8
006-A9192
P-DSO-20-6
smd transistor 7D
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smd transistor 7D
Abstract: SMD TRANSISTOR MARKING A7
Text: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4279 Version 2.0 Features Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low down to VQ = 1 V Overtemperature protection Reverse polarity proof Settable reset threshold
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067006-A9225
Q67006-A9307
P-DSO-14-8
P-DSQ-20-6
Q67006-A9306
P-DSO-20-6
smd transistor 7D
SMD TRANSISTOR MARKING A7
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Untitled
Abstract: No abstract text available
Text: l o g i_ 7 c io 8 /io 9 128K x 8 Static RAM Low Power i c D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum
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L7C108/109)
108-L/109-L)
MIL-STD-883,
CY7C108/109,
IDT710
24/71B024,
MT5C1008,
226A/62L26A,
CXK581020
32-pin
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Untitled
Abstract: No abstract text available
Text: L7C108/109 128K x 8 Static RAM Low Power ;• v .• s [. : j ;i’[ : <a DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum
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L7C108/109
L7C108
L7C109
L7C109KC25*
L7C109KC20*
L7C109KC17*
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Untitled
Abstract: No abstract text available
Text: L7C197 25 6K x 1 Static R A M FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 165 mW typical at 35 ns Standby: 5 mW typical
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L7C197
MIL-STD-883,
IDT71257,
CY7C197
24-pin
28-pin
L7C197
L7C197CM20
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MARKING CODE SMD JW
Abstract: P600 S8000 time-zone network identification module s8000 DP950
Text: System 8000 ZEUS Administrator Manual 03-3246-04 October, 1983 Copyright 1983 by Zilog Inc. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means, elec tronic, mechanical, photocopying, recording, or otherwise,
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Untitled
Abstract: No abstract text available
Text: L7C194/195 *- — • — - - L 7 C 1 3 4 /1 S E 6 4 K x 4 Static RAM JbVUI-S ■ : XJHHO -■AI h □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation
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L7C194/195
L7C194
L7C195
MIL-STD-883,
CY7C194/195
24/28-pin
28-pin
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transistor kA2 smd
Abstract: AEP01481
Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms
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Q67000-A9153
P-T0220-7-3
67006-A
P-T0220-7-180
Q67000-A9246
P-T0220-7-230
GPT05887
transistor kA2 smd
AEP01481
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93c46 wm
Abstract: 22 pin ccd, dip, bar code HBCR2311 MSI IC decoder SMD 5 PIN CODE ad2 AD438 IC LA 4044 AUDIO
Text: W m HEW LETT WL'liM P A C K A R D Program m able Bar Code D ecode ICs Technical Data HBCR-2310 HBCR-2311 HBCR-2312 F eatu res • Supports 8 Bar Code Sym bologies • Ideal for Hand, CCD, and Laser Scanning Applications • Autom atic Code Recognition • Serial or Parallel I/O
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HBCR-2310
HBCR-2311
HBCR-2312
5964-1554E
93c46 wm
22 pin ccd, dip, bar code
HBCR2311
MSI IC decoder
SMD 5 PIN CODE ad2
AD438
IC LA 4044 AUDIO
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siemens 4261-2
Abstract: a4s smd transistor smd transistor A4S smd transistor zd MARKING SMD PNP TRANSISTOR FR TRANSISTOR smd FQ siemens 4261 smd transistor marking 327 siemens automotive air temperature sensors TLE 4271 G
Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4261-2 Preliminary Data Bipolar 1C Features • • • • • • • • • • • • • • High accuracy 5 V + 2% Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity
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P-T0220-7-1
Q67000-A9110
Q67000-A9140
Q67006-A9193
P-DSO-20-6
P-T0220-7-8
S35bOS
23SbDS
siemens 4261-2
a4s smd transistor
smd transistor A4S
smd transistor zd
MARKING SMD PNP TRANSISTOR FR
TRANSISTOR smd FQ
siemens 4261
smd transistor marking 327
siemens automotive air temperature sensors
TLE 4271 G
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98-LD
Abstract: No abstract text available
Text: L7C1 n a/m g L 7 C 1 0 3 /1 OS IJbVIÜI-S INuuHHÜKA I H □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 10 ns maximum □Low Power Operation Active: 570 mW typical at 15 ns
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MIL-STD-883,
CY7C108/109,
IDT71024/71B024,
MT5C1008,
MCM6226A/62L26A,
CXK581020
32-pin
98-LD
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EZ722
Abstract: A7t smd EZ524 smd code A7t smd A6t zd 409 5962-88525 07 xa Select 642 UX A14C AT28C256
Text: Features • Fast Read Access Time -150 ns • Automatic Page Write Operation - Internal Address and Data Latches for 64 Bytes - Internal Control Timer • Fast Write Cycle Times - Page Write Cycle Time: 3 ms or 10 ms Maximum - 1 to 64-Byte Page Write Operation
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64-Byte
AT28C256
EZ722
A7t smd
EZ524
smd code A7t
smd A6t
zd 409
5962-88525 07 xa
Select 642 UX
A14C
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smd marking Yd
Abstract: No abstract text available
Text: SIEMENS 8 X Digital Sensor Interface FZE 1658G Features • Input protection against 2000 V burst/500 V surge pulse according to IEC 801 4/5 • Input characteristic according to IEC 65 A, type 2 24 V DC • Digital filter • Serial in/out for easy cascading
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1658G
burst/500
Q67000-A8361
P-DSO-24-1
1658G
35x45'
smd marking Yd
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