SME6G10US60 IGBT Search Results

SME6G10US60 IGBT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
GT30N135SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1350 V, 30 A, Built-in Diodes, TO-247
GT30J65MRB		Toshiba Electronic Devices & Storage Corporation	IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

SME6G10US60 IGBT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SME6G10US60 IGBT Abstract: igbt 300V 10A datasheet SME6G10US60 Contextual Info: Preliminary SME6G10US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * General Purpose Inverters * UPS, CVCF * Robotics , Servo Controls	Original	SME6G10US60 17-PM-BA SME6G10US60 IGBT igbt 300V 10A datasheet SME6G10US60	PDF
Contextual Info: Preliminary SME6G10US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * * * * General Purpose Inverters UPS, CVCF	OCR Scan	SME6G10US60 17-PM-BA	PDF
SME6G10US60 Contextual Info: Preliminary SME6G10US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS atTc=100°C APPLICATIONS * * * * Package code : 17-PM-BA General Purpose Inverters	OCR Scan	SME6G10US60 17-PM-BA SME6G10US60	PDF
SME6G10US60 Abstract: SME6G10US60 IGBT Contextual Info: Prelim inary SME6G10US60 C O M P A C T IG B T M O D U L E FE A TU R ES * High Speed Switching * Low Conduction Loss : V CE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S * * * * Package code : 17-PM-BA	OCR Scan	SME6G10US60 17-PM-BA SME6G10US60 SME6G10US60 IGBT	PDF
ss8050 d 331 Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34	PDF