44n50
Abstract: 48N50
Text: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30
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SMOS44/48N50D2,
SMOS44/48N50D3
OT-227
5ID25
300us,
00A/us;
80A/us;
44n50
48N50
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16PIN
Abstract: MPC17533 OUT2B
Text: Freescale Semiconductor, Inc. M Product Preview SMARTMOS R MPC17533 Freescale Semiconductor, Inc. 2 Channel H-Bridge Driver IC MPC17533 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU.
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MPC17533
MPC17533
16PIN
OUT2B
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Untitled
Abstract: No abstract text available
Text: Systems in Silicon Contact Information: S-MOS Systems, Inc. 408-922-0200 or 800-228-9958 150 River Oaks Parkway San Jose, California 95134 Fax: 408 922-0238 E-mail: literature@smos.com URL: www.smos.com AMD Embedded Processor Division, FusionE86 Support
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FusionE86
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TMS626162A
Abstract: No abstract text available
Text: TMS626162A 524ā288 BY 16ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS692B − JULY 1997 − REVISED MARCH 1998 D Organization D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)
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TMS626162A
16BIT
SMOS692B
100-MHz
TMS626162A
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Untitled
Abstract: No abstract text available
Text: M Product Preview SMARTMOS MPC17529 R 2 Channel H-Bridge Driver IC MPC17529 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU. This IC can control 4 mode output function
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MPC17529
MPC17529
20PIN
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SMOS44N80
Abstract: PD100A
Text: SMOS44N80 Power MOSFETs S S D Dimensions SOT-227 ISOTOP Dim. G G=Gate, D=Drain,S=Source Test Conditions Symbol Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09
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SMOS44N80
OT-227
5ID25;
5ID25
300us,
00A/us;
SMOS44N80
PD100A
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TMS626812
Abstract: No abstract text available
Text: TMS626812 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS687A –JULY 1996 – REVISED APRIL 1997 D D D D D D D D D D D D D D D D D Organization . . . 1M x 8 × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving
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TMS626812
SMOS687A
83-MHz
TMS626812
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TMS626812
Abstract: No abstract text available
Text: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)
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TMS626812A
SMOS691B
100-MHz
TMS626812
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48N50
Abstract: 44n50 SMOS44N50 SMOS48N50
Text: SMOS44N50, SMOS48N50 Power MOSFETs S S D Dimensions SOT-227 ISOTOP Dim. G G=Gate, D=Drain,S=Source Test Conditions Symbol VDSS 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595
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SMOS44N50,
SMOS48N50
OT-227
5ID25;
5ID25
300us,
00A/us;
48N50
44n50
SMOS44N50
SMOS48N50
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SOT-227 Package
Abstract: SOT-227 TO-247ad SMOS21N50 SMOS26N50 SMOS44N50 SMOS44N50D2 SMOS44N50D3 SMOS44N80 SMOS48N50
Text: Power MOSFETs Electrical Characteristics Òype VDSS ID25 @TC=25°C RDS ON VGSS Ñircuit Package Style  A SMOS21N50 500 21.0 250 " 20 0.45 1 TO-247AD SMOS26N50 500 26.0 200 " 20 0.50 1 TO-247AD SMOS44N50 500 44.0 120 " 20 0.24 1 SOT-227 SMOS44N50D2 500 44.0
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SMOS21N50
O-247AD
SMOS26N50
SMOS44N50
OT-227
SMOS44N50D2
SMOS44N50D3
SOT-227 Package
SOT-227
TO-247ad
SMOS21N50
SMOS26N50
SMOS44N50
SMOS44N50D2
SMOS44N50D3
SMOS44N80
SMOS48N50
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SMOS182
Abstract: No abstract text available
Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1
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TMS626802,
TMS636802
1048576-WORD
SMOS182
100-MHz
S626802
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C2238
Abstract: TMS626812
Text: TM S626412A , TM S626812A 2 0 9 7 1 5 2 B Y 4 -B IT B Y 2 -B A N K , 1 0 4 8 5 7 6 B Y 8 -B IT B Y 2 -B A N K S Y N C H R O N O U S D Y N A M IC R A N D O M -A C C E S S M E M O R IE S _ SMOS691A-JULY 1997 - REVISED OCTOBER 1997 SYNCHRONOUS
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S626412A
S626812A
SMOS691A-JULY
626x12A-10
626x12A-12
TheTMS626x12A
16777216-bit
C2238
TMS626812
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TMS626812
Abstract: No abstract text available
Text: TMS626812 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY _ SMOS687A -JULY 1 9 9 6- REVISED APRIL 1997 • • • Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving
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TMS626812
1048576-WORD
SMOS687A
83-MHz
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Untitled
Abstract: No abstract text available
Text: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)
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TMS664414,
TMS664814,
TMS664164
64M-BIT
SMOS69Q
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MC141501P
Abstract: voice recording chip VOICE RECording MC141501 3.58 Mhz Crystal
Text: M M O T O R O L A MC141501P Product Preview Single Chip Voice Memory System Low power Silicon-Gate CMOS The voice memory system is a SMOS integrated circuit specially designed for voice recording/reproduction application. e.g. Telephone Answering Machine.
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256K/1M
MC141501P
SG407/D
MC141501P
voice recording chip
VOICE RECording
MC141501
3.58 Mhz Crystal
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2U97
Abstract: No abstract text available
Text: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS642A- FEBRUARY 1994 - REVISED JUNE 1995 DGEPACKAGE TOP VIEW • Organization . . . 2M x 4 x 2 Banks • 3.3-V Power Supply (±10% Tolerance) • TWo Banks for On-Chip Interleaving
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TMS626402
2097152-WORD
SMOS642A-
100-MHz
2U97
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TMS6264
Abstract: TMS626812
Text: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving
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TMS626412A,
TMS626812A
SMOS691A
100-MHz
R-PDSO-G44)
TMS6264
TMS626812
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TMS6264
Abstract: No abstract text available
Text: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS842A - FEBRUARY 1994 - REVISED JUNE 1995 • Organization . . . 2M x 4 x 2 Banks DGE PACKAGE TOP VIEW • 3.3-V Power Supply (±10% Tolerance) • Two Banks fo r On-Chip Interleaving
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TMS626402
2097152-WORD
SMOS842A
100-MHz
TMS6264
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texas instruments 77261
Abstract: TEXAS 77261 N03J
Text: TMS626802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS182A - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) High Bandwidth - Up to 100-MHz Data
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TMS626802
1048576-WORD
SMOS182A
100-MHz
texas instruments 77261
TEXAS 77261
N03J
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Untitled
Abstract: No abstract text available
Text: TMS626162A 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS692B - JULY 1997 - REVISED MARCH 1998 Organization 512K x 16 Bits x 2 Banks 3.3-V Power Supply ±10% Tolerance DGEPACKAGE (T O P V IE W ) VCC £ 1 DQOt 2 DQ1 [ 3 VSSQ t 4
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TMS626162A
16-BIT
SMOS692B
100-MHz
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S626802-12
Abstract: No abstract text available
Text: T M S 6 2 6 1 62 5 2 4 2 8 8 - W O R D BY 1 6- B I T B Y 2 - B A N K SYNCHRO NO US DYNAMIC RA N D O M -A C C E S S MEMORY SMOS683D - FEBRUARY 1995 - REVISED JULY 1996 Or ga ni z a t i on . . . 512K x 1 6 x 2 B a n k s DGEPACKAGE TOP V IE W 3.3-V P o w e r S u p p l y (±10% Tol erance)
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SMOS683D
83-MHz
S626802-12
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Untitled
Abstract: No abstract text available
Text: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693 - OCTOBER 1997 TMS626412B DGEPACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses)
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TMS626412B,
TMS626812B
SMOS693
100-MHz
R-PDSO-G44)
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V210AB
Abstract: V210B
Text: V210B/V210AB HIGH VOLTAGE, PHOTO SMOS RELAY cosmo FEATURES • • • • • • • Normally Open,Single Pole Single Throw Control 350VAC or DC Voltage Switch 130mA Loads LED control Current, 5mA Low ON-Resistance dv/dt, >500V/ms Isolation Test Voltage, 3750VACrms
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V210B/V210AB
V210B
350VAC
130mA
00V/ms
3750VACrms
V210AB
V210AB
V210B
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V214S
Abstract: No abstract text available
Text: V214S HIGH VOLTAGE, PHOTO SMOS RELAY cosmo FEATURES • • • • • • • Normally Open,Single Pole Single Throw Control 400VAC or DC Voltage Switch 130mA Loads LED control Current, 5mA Low ON-Resistance dv/dt, >500V/ms Isolation Test Voltage, 1500VACrms
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V214S
400VAC
130mA
00V/ms
1500VACrms
V214S
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