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    SMT A1 TRANSISTOR Search Results

    SMT A1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMT A1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smt a1 transistor

    Abstract: A1234 G200 PTF 10021
    Text: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is


    Original     		PDF 1-877-GOLDMOS 1301-PTF smt a1 transistor A1234 G200 PTF 10021

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    smt a1 transistor

    Abstract: G200
    Text: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency


    Original     		PDF 1-877-GOLDMOS 1522-PTF smt a1 transistor G200

    J201 Replacement

    Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
    Text: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current


    Original     		PDF IT130A IT130 IT131 IT132 250mW 500mW J201 Replacement JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"

    sot 26 Dual N-Channel MOSFET

    Abstract: 10mA JFET LS358
    Text: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C


    Original     		PDF LS358 250mW 500mW sot 26 Dual N-Channel MOSFET 10mA JFET

    jfet differential transistor

    Abstract: JFET 401 U402 N CHANNEL FET
    Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature


    Original     		PDF LS318 250mW 500mW LS318 jfet differential transistor JFET 401 U402 N CHANNEL FET

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


    Original     		PDF IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement"

    Current Regulator Diode

    Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS350 LS351 LS352 275MHz 250mW 500mW LS352 Current Regulator Diode J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    Untitled

    Abstract: No abstract text available
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS301 LS302 LS303 100MHz 250mW 500mW LS301ithic

    Untitled

    Abstract: No abstract text available
    Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current


    Original     		PDF IT120A IT120 IT121 IT122 250mW 500mW

    Dual pnp Dual npn Transistor

    Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
    Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3550 OT-23 Dual pnp Dual npn Transistor n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310

    capacitor siemens 4700 35

    Abstract: L15 800 G200 K1206 PTF10049 SMT 181 resistor SIEMENS B 58 371 470-860 mhz Power amplifier w PTF 10049
    Text: PTF 10049 85 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10049 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts


    Original     		PDF K1206 UT-85-25 1-877-GOLDMOS 1301-PTF capacitor siemens 4700 35 L15 800 G200 K1206 PTF10049 SMT 181 resistor SIEMENS B 58 371 470-860 mhz Power amplifier w PTF 10049

    bt 1696

    Abstract: 12x12 bga thermal resistance 35x35 bga BGA 23X23 BGA 27X27 pitch TsoP 20 Package XILINX xilinx CS144 thermal resistance CF1144 BGA thermal resistance 6x8 smt a1 transistor
    Text: Xilinx Advanced Packaging Electronic packages are the interconnect housings for semiconductor devices. They provide electrical interconnections between the IC and the board, and they efficiently remove the heat generated by the device. Device feature sizes are


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UMA1N / UMB1N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1N / UMB1N / FMA1A / IMB1A / IMB5A !External dimensions (Units : mm) !Feature 1) Two DTA124E chips in a UMT or SMT package. −55 ~ +150 1.3 2.0 (2) 0.9 0.7 UMB1N


    Original     		PDF DTA124E 120mW 200mW SC-88A

    IC t148

    Abstract: DTA124E T110 T148
    Text: UMA1N / UMB1N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1N / UMB1N / FMA1A / IMB1A / IMB5A !External dimensions (Units : mm) !Feature 1) Two DTA124E chips in a UMT or SMT package. −55 ~ +150 1.3 2.0 (2) 0.9 0.7 UMB1N


    Original     		PDF DTA124E 120mW 200mW SC-88A SC-74 5mA/-10mA IC t148 T110 T148

    smt a1 transistor

    Abstract: smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix
    Text: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 BOTTOM VIEW TO-78


    Original     		PDF 500mW smt a1 transistor smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix

    ericsson 10159

    Abstract: PTF10159 470-860 mhz Power amplifier w
    Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power


    Original     		PDF UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF10159 470-860 mhz Power amplifier w

    ericsson 10159

    Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
    Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and


    Original     		PDF UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 470-860 mhz Power amplifier w UT85-25

    UMT3N

    Abstract: T108 T109 T110
    Text: UMT3N/IMT3A h ÿ > v 7s £ /Transistors UMT3N IMT3A 7 4 V U -— T “ y K -X — K x / W X Isolated Mini-Mold Device -JK 'J'ft^Jlfifll/G eneral Small Signal Amp. • W fiv fîi ¡2/Dimensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t i L'«o 2) UMT, SMT CDÉ


    OCR Scan     		PDF SC-70) SC-59) 15OLLECTOR UMT3N T108 T109 T110

    Untitled

    Abstract: No abstract text available
    Text: IMB4 /Transistors t' I M 4 B 'Sis— T V O / ’v— ^ K ^ ^ /V ln v e rte r Driver Isolated Mini-Mold Device • • ^ J g -^ J H /D im e n s io n s Unit : mm 2( OT h Vt>J VtVvJlcr 1) SMT (SC-59) fclD — , ,+0.2 7 > '/ X j i if A o T i'J o '• - 0 . '


    OCR Scan     		PDF SC-59)

    Untitled

    Abstract: No abstract text available
    Text: IMX1 /Transistors I M X 1 7 < 7 1 / - T 7 K ^ - ;E - ^ K t / H 7 —fix/H f ^ * a lflIffl/G eneral Small Signal Amp. Isolated Mini-Mold Device • • ^. g-^->i@ /Dim ensions U n it: mm) 1) SMT (SC-59) t m — f t t H c 2 f@(7) h 7 > - > ' X 5 i ! A o Zi'&o


    OCR Scan     		PDF SC-59)

    UM81N

    Abstract: sc-88a si DTA124E SML-210 SML-210FT SML-210MT T110 T148
    Text: UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1NI UMB1NI UMB5NI FMA1A/ IMB1AI IMB5A •External dimensions (U nits: mm) •Features 1) Two DTA124E chips in a UMT or SMT package. •Absolute maximum ratings (Ta = 25°C)


    OCR Scan     		PDF DTA124E UM81N 210M7 sc-88a si SML-210 SML-210FT SML-210MT T110 T148