SMT MARKING AP Search Results

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking

CAPACITOR marking code 2A

Abstract: CAPACITOR 560uf j 6.3 capacitor 220uF 63vdc capacitor color code CAPACITOR MARKING electrolytic capacitor date code capacitor 2.2uF 63vdc 1500uF 40VDC 150uf 450vdc capacitor 25 v 1000uF electrolytic capacitor
Contextual Info: 07/10 www.niccomp.com | Tech support: TPMG@niccomp.com COMPONENT MARKING SMT VERTICAL CAN ≥ 4mm Ø LIQUID ELECTROLYTE ALUMINUM ELECTROLYTIC CAPACITOR (MARKING SYSTEM EFFECTIVE OCTOBER 1999) YEAR CODE Example shown: NACZ102M6.3V8X10.5TR13F Produced May 2009

siemens SFH nm

Abstract: I03f
Contextual Info: SIEMENS GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAIAs Infrared Emitter in SMT Package 3 < o0 a 3.0 0.1 typ 0.18 J | I 0.12 / JO .6 0.4 SFH 421 TO PLEDq Cathode/Collector Approx. weight 0.03 g Collector SFH 421 SFH 426 GPL06724 Emitter Collector/Cathode marking

Contextual Info: Data Sheet 1.14.002.-MICON 5 short-travel keyswitches SMT standard version Terminals Plunger / height [mm] SMT low version Operating force F1 [N] +- 20% Switching travel S2 [mm] Operating life [operations] THT standard version Product (type) marking Order no.

bpw filter

Abstract: 34FAS BPW 34 FAS
Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT Silicon PIN Photodiode with Daylight Filter New: in SMT BPW 34 FA BPW 34 FAS LO r*- o to o o 0 Cathode marking ,4.0, spacing Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GE006643

Contextual Info: SMT Power Inductors SMT-Power-Induktivitäten 11 max. Marking 10.4 ref. 13.1 max. 2.3 ref. SMT power inductors B82559 h • Sizes: 13.1 x 11 x 4.95 mm ■ Baugrößen: 13.1 x 11 x 4.95 (mm) 13.1 x 11 x 5.95 (mm) ■ Core material: ferrite ■ Helically wound

Q62702-P1055

Abstract: GPL06880 GPL06724 Q62703-P0331
Contextual Info: 3.0 2.6 2.3 2.1 2.1 1.7 3.7 3.3 0.9 0.7 1.1 0.5 3.4 3.0 2.4 0.1 typ SFH 421 SFH 426 fpl06724 GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector Approx. weight 0.03 g

GPL06724

Abstract: GPL06880 Q62702-P0330 Q62702-P1690
Contextual Info: 3.0 2.6 2.3 2.1 2.1 1.7 0.1 typ 0.9 0.7 1.1 0.5 3.7 3.3 2.4 3.4 3.0 SFH 420 SFH 425 fpl06724 GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector Approx. weight 0.03 g

Q62702-P1610

Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639
Contextual Info: SFH 325 SFH 325 FA fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package 0.7 2.8 2.4 4.2 3.8 2.4 (R1) fplf6867 (1.4) 3.8 3.4 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing (2.85) 1.1

GEO06643

Abstract: GEO06863 Q62702-P1129 Q62702-P463 BPW 34 FAS
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 FA BPW 34 FAS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT Silicon PIN Photodiode with Daylight Filter New: in SMT 0.6 0.4

bpw 104

Abstract: GEO06643 GEO06863 Q62702-P1604 Q62702-P929 bpw+104 BPW34F
Contextual Info: 0.8 0.6 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 F BPW 34 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8

GEO06075

Abstract: GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BP 104 F BP 104 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8

Contextual Info: Opto Semiconductors GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package 0.3 min 2.1 1.7 1.0 0.9 5.4 5.0 1.7 1.5 3.4 3.0 2.4 0.3 max 3.0 2.6 2.3 2.1 SFH 4281 0.0.1 Cathode/ Collector SFH 4281 TOPLED RG fpl06899 Cathode/Collector marking

x050

Abstract: MIL-PRF-123
Contextual Info: STANDARD SMT CHIP P/N BREAKDOWN 1206 N 472 J 101 N X050 H T M - HB Marking Case Size M = Marked None = Unmarked Marking not available on sizes 0603 and below Dielectric Code Code EIA Class Packaging N B X Y COG/NP0 X7R BX Y5V Ultra Stable Stable MIL General Purpose

mil spec capacitor catalog

Contextual Info: STANDARD SMT CHIP P/N BREAKDOWN 1206 N 823 J 101 N X050 H T M Marking Case Size M = Marked None = Unmarked Marking not available on sizes 0603 and below Dielectric Code Code EIA Packaging Class T= Tape and Reel W = Waffle Pack None = Bulk N B X Y COG/NP0 X7R

Contextual Info: Opto Semiconductors 0.3 min 2.1 1.7 1.0 0.9 5.4 5.0 1.7 1.5 2.4 3.4 3.0 0.3 max 3.0 2.6 2.3 2.1 SFH 3211 SFH 3211 FA fpl06899 NPN-Silizium-Fototransistor im  SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in  SMT TOPLED RG-Package 0.0.1 Cathode/Collector marking

074004

Abstract: KMS231G b 124004
Contextual Info: KMS Series Microminiature Side Actuated Tact Switch for SMT Features/Benefits • Compact size • Excellent tactile feel • ESD protection • Date code marking • Positioning pegs for stability • IP 40 sealing • RoHS compliant and compatible Typical Applications

BPW34S

Abstract: E9087 GEO06643 GEO06863 GEO06916 Q62702-P1602 Q62702-P1790 Q62702-P73 S8050
Contextual Info: feo06643 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing

feo06643

Abstract: GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 BPW 34 S feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 . 5˚ 5.08 mm

8050S

Abstract: 8550S IMZ88
Contextual Info: UTC IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Both a 8550S chip and 8050S chip in a SMT package APPLICATIONS *Class B push-pull audio amplifier *General purpose applications MARKING 4 5 EQUIVALENT CIRCUITS 6 4 (5) (6) SOT-26 Tr2 Z 8

Contextual Info: DTB123TK Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package package marking: DTB123TK; E92 a built-in bias resistor allows inverter circuit configuration without external input resistors DTB123TK (SMT3)

marking code SG transistors

Abstract: ic MARKING FZ 2SC4713K 2SC4774 marking code SG transistor
Contextual Info: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM *, where ★ is hFE code • very low output on state resistance • low capacitance Applications • radio frequency amplifier

8550S

Abstract: 8050s equivalent 8050S IMZ88 ic 8050s
Contextual Info: UTC IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Both a 8550S chip and 8050S chip in a SMT package APPLICATIONS *Class B push-pull audio amplifier *General purpose applications MARKING 4 5 EQUIVALENT CIRCUITS 6 4 (5) (6) SOT-26 Tr2 Z 8

transistor MARKING CODE RJ

Abstract: transistor 531
Contextual Info: DTB123YK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package package marking: DTB123YK; F52 DTB123YK (SMT3) a built-in bias resistor allows inverter circuit configuration without external input resistors