SN63PB37 TDS Search Results

A4t transistor

Abstract: A09T transistor A4t 5343B transistor A09t A6T TRANSISTOR A6F diode transistor A4t 46 transistor A9t AI203
Contextual Info: Main Features • • • • • • • • • • • • 10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs 2 Vpp Differential Analog Output Swing Output Impedance: 50Ω Single-ended, 100Ω Differential

transistor A09t

Abstract: A09T C7f TRANSISTOR transistor A4t 46 transistor A4t 45 DIODE ga
Contextual Info: TS86101G2B 4:1 10-bit 1.2 Gsps MUXDAC Datasheet Main Features • • • • • • • • • • • • 10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs 2 Vpp Differential Analog Output Swing

A09T

Abstract: transistor A09t transistor A6t 75 C7f TRANSISTOR transistor A9t DIODE ga C6f TRANSISTOR A09F transistor A4t 85 D9F SRAM
Contextual Info: Main Features • • • • • • • • • • • 10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs 2 Vpp Differential Analog Output Swing Output Impedance: 50Ω Single-ended, 100Ω Differential

A09t

Abstract: transistor A4t 46 transistor A09t diode A5F C7f TRANSISTOR TS86101G2B AI203 MC100EP17 NBSG16 TS86101G2BCGL
Contextual Info: Main Features • • • • • • • • • • • • 10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs 2 Vpp Differential Analog Output Swing Output Impedance: 50Ω Single-ended, 100Ω Differential

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

Contextual Info: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  30% Space saving vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

Contextual Info: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  30% Space saving vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

W3E32M64S-XBX

Contextual Info: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,

16M x 16 DDR TSOP-66

Contextual Info: White Electronic Designs W3E32M64SA-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,

W3E16M64S-XBX

Abstract: W3E32M64S-XBX
Contextual Info: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,

Contextual Info: W3E32M64S-XBX 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333Mb/s*  41% SPACE SAVINGS vs. TSOP  Package:  Reduced part count • 219 Plastic Ball Grid Array PBGA , 25mm x 25mm, 625mm2  Reduced trace lengths for lower parasitic capacitance

Sn63pB37 tds

Abstract: W3E32M64S-XSBX TSOP66
Contextual Info: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)

Contextual Info: W3E32M64S-XB3X 256 – 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333*  73% Space Savings vs. FPBGA  Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm  Reduced part count

Contextual Info: W3E32M64SA-XBX 32Mx64 DDR SDRAM FEATURES GENERAL DESCRIPTION  DDR SDRAM rate = 200, 250, 266, 333Mb/s* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

W3E32M72SR-XSBX

Contextual Info: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS „ Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s „ 74% SPACE SAVINGS vs. TSOP „ Reduced part count „ Package: „ 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm

Contextual Info: W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS  Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s  74% SPACE SAVINGS vs. TSOP  Package:  51% I/O reduction vs TSOP  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 25mm

TSOP66

Abstract: W3E32M72SR-XSBX
Contextual Info: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS „ Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s „ 74% SPACE SAVINGS vs. TSOP „ Reduced part count „ Package: „ 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm

Contextual Info: W3E32M72SR-XBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS  Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s  74% SPACE SAVINGS vs. TSOP  Package:  51% I/O reduction vs TSOP  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 25mm

Contextual Info: W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333*  73% Space Savings vs. FPBGA  Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm  Reduced part count  2.5V ±0.2V core power supply

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585