SO 2503 Search Results

Contextual Info: M1N51264DSH8B1G / M1N25664DSH4B1G M1S51264DSH8B1G / M1S25664DSH4B1G 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B

M2N51264DSH8B1G-6K

Abstract: pc2700 memory M2N51264DSH8B1G
Contextual Info: M2N51264DSH8B1G 512MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B device, organized as 32Mx16 DDR SDRAM

M1S51264DSH8B1G-6K

Contextual Info: M1N1G64DS8HB0F / M1N51264DSH8B1G / M1N25664DSH4B1G M1S1G64DS8HB0F / M1S51264DSH8B1G / M1S25664DSH4B1G 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM

Contextual Info: NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM

nt512d64sh8b0gn-6k

Abstract: NANYA NT256D64SH4B0GN-6K NT1G NT512D64SH8B PC2700 DDR333 256mb ddr333 200 pin
Contextual Info: NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM

nt512d64sh8b0gn-6k

Contextual Info: NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM

NT512D64SH8B0GM-75B

Contextual Info: NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB PC2700 and PC2100 200 pin Unbuffered DDR SO-DIMM Based on DDR333/266 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM

25032f

Abstract: pt100 measurement relay circuit to drive heater LCM 4002 Thermocouple circuit EN50081-2 EN50082-2 EN61000-6-2 EN61326-1 spdt 12v 150 OHM relay
Contextual Info: 1.2.1 All procedures in this Manual should be performed only by personnel competent and authorised to do so. All local and national regulations pertaining to electrical installations must be rigidly observed. 1 INSTALLATION - MECHANICAL 1.1 1.1.1 SITE PRE-REQUISITES

keramische Werke Hermsdorf

Abstract: cc 2514 Scans-048 hescho hermsdorf DSAGER000245 Werke Hermsdorf scheibentrimmer
Contextual Info: H E S C H O -Trimmer Die Scheibentrimmer der Firma Hescho Keramische Werke Hermsdorf sind in historischen Geräten der enddreisiger und vierziger Jahre sehr verbreitet. Leider ist die Silberschicht meist oxidiert, so dass die Trimmer entweder ausgewechselt oder mit Kondensatoren bzw.

keramische Werke Hermsdorf

Abstract: hescho scheibentrimmer hermsdorf Werke Hermsdorf TK 2518
Contextual Info: H E S C H O –Trimmer Die Scheibentrimmer der Firma Hescho Keramische Werke Hermsdorf sind in historischen Geräten der enddreisiger und vierziger Jahre sehr verbreitet. Leider ist die Silberschicht meist oxidiert, so dass die Trimmer entweder ausgewechselt oder mit Kondensatoren bzw.

84-1LMI epoxy adhesive

Abstract: 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS
Contextual Info: GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note # 54 - Rev. A May 2000 1.0 ESD Considerations A GaAs IC can be destroyed electrically by a static or other discharge through the device. It must therefore be handled so these effects cannot occur.

NEC VFD Display

Abstract: tdk vfd power supply module tdk vfd power module digital wrist watch lcd display detail 78K/0 Series Users Manual Instruction DIGITAL VFD CLOCK IC NEC FIP vfd a14 digital wrist watch circuit FIP VFD
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD78P018F A 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µ PD78P018F(A) comes under a more severe quality assurance program than the µ PD78P018F (standard grade), so it is classified as special grade in NEC’s quality grade classification.

mPD78016F

Abstract: CRYSTAL RESONATOR CERAMIC 78018FY 78P018FGC C11531E uPD78018F uPD78P018F uPD78P018FCW PD78015
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT mPD78P018F A 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The m PD78P018F(A) comes under a more severe quality assurance program than the m PD78P018F (standard grade), so it is classified as special grade in NEC’s quality grade classification.

Contextual Info: CCMQ2 Mk II Connectors For applications where the reader usage is high and the life span of the card is a key consideration, a connector with contacts which land on the card, ratherthan slide over it, should be specified so as to minimise card wear. The CCM02 has

D78058

Abstract: UPD 74H NEC Electronics uPD Series NEC JAPAN IC D780 78p018fgc 1404EE NEC D780
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 7 8 P 0 1 8 F A 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /¿PD78P018F(A) comes under a more severe quality assurance program than the /xPD78P018F (standard grade), so it is classified as special grade in N EC ’s quality grade classification.

NEC R4400

Abstract: VR4000 VR4100 VR4300TM NEC VR4300
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD30100 VR4100TM 64-BIT MICROPROCESSOR The µPD30100 VR4100 is a high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessor employing the RISC architecture developed by MIPS. The VR4100 is compact and consumes little power so that it can be used in battery-driven, high-performance

Contextual Info: M ic r o c h ip PACKAGE TYPES DEVICE SELECTION TABLE Part Number Vcc Range Max Clock Frequency Temp Ranges 25C320 4.5-5.5V 3 MHz C.I.E PDIP, SOIC C5 C 1 SO c 2 FEATURES WP C 3 • Low power CMOS technology - Write current: 3 mA maximum - Read current: 500 |iA typical

155154

Contextual Info: uuJ H igh D ynam ic Range Am plifier * * * * * * » 250-3000 M H z Bandwidth 41 dBm O utput IP3 2.8 dB N oise Figure 12 dB Gain 21 dBm P 1dB H igh Reliability SO T-89 Surface M ount Package Frequency Range Gain S ll S22 Output IP3 Noise Figure Output PI dB

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

WATKINS JOHNSON

Abstract: WATKINS JOHNSON amplifier
Contextual Info: uuU GaAs MMIC Amplifier 250-3000 MHz Bandwidth 3 6 dB m O u tp u t IP3 2 .6 dB N oise Figure 13 dB Gain 18 dBm PldB H igh R eliability SO T -89 Surface M oun t Package Frequency The Watkins Johnson A M I is a general purpose gain block that offers good dynamic range in a

2SB835

Abstract: 2SB835 R
Contextual Info: 2SB835 2SB835 '> V zi > P N P x 4r'> t * ; u 7 V •^"Jf^/Si P N P Epitaxial Planar Power Amplifier • # » /F e a tu r e s V cE sat VcE(sat) • P S C S i S S t l So M type package suitable for automatic insertion, easier manual inser­ tion, self-standing on PC boad.

MIL-C-39012 SMA SPEC

Abstract: m39012.55-4007 amphenol 74868 amphenol 69 SERIES Amphenol Assembly instructions Amphenol - Assembly instructions Amphenol 349-50114 Amphenol 901-128-11 QQ-S-571 250-36UNS-2B
Contextual Info: REVISIONS 901-128-11 NOTES- REV DRAWING NO. DESCRIPTION 1. ASTER ISK Cm INDICATES C A B LE ENTRY DIM'S OF METAL PA R TS ONLY. 2. CUSTOMER NdTE> WHEN SOLDERING CONTACT TO CABLE. ROSIN CORE SO FT SOLDER PER Q Q -S -571 COMPOSITION Sn6G IS RECOMMENDED. 3. INSULATOR ITEM 2) MUST NOT EXC E ED .003 MAX ABO VE METAL SHOULDER OF BODY <ITEM i>.

rgn 1064

Abstract: vergleichsliste mo465 telefunken hr 660 tungsram Ubf 11 TK4100 RGN2004 Telefunken g-2504 Telefunken ebf 11
Contextual Info: ' RÖHRENDATEN für Schule u, Werkstatt y ^ 1. VergleichstabeSIe F 2, Austauschliste Ausgabe 1928— 1945 . ' *en W ü n schen v ie le r Interessenten, en tsp rech en d , bringen w ir mit n ach fo lg e n d e r A ufstellung eine Vergleichsliste d e r e u ro p äisch en Röhren so w ie eine Austaüschrtste* die

M3911

Abstract: AWG826 molex 5578 series molex mxj 500 SD-5320-NB
Contextual Info: 5 3 4 2 NOTES 1. M A TER IA L HOUSING TERM INAL CONTACT AREA : G .F . 15Z. P B T P U L9 4 V -0 : PHOSPHOR BRONZE 2. FOR USE WITH AWG*26 & * 2 8 STRANDED WIRE (C O N SISTS OF 7 CONDUCTORS) 2.95REF, AND *2 8 SO LID W IRE. 1.14(.045) D IA. MAX. IN SU LA TIO N RIBBON C A B LE WITH