Untitled
Abstract: No abstract text available
Text: NTMFD4C88N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 24 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses
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NTMFD4C88N
NTMFD4C88N/D
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Untitled
Abstract: No abstract text available
Text: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Q1 Top FET 30 V 6.5 mW @ 10 V Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space
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NTMFD4901NF
NTMFD4901NF/D
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Untitled
Abstract: No abstract text available
Text: NTMFD4C87N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses
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NTMFD4C87N
NTMFD4C87N/D
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4902N
Abstract: No abstract text available
Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky
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NTMFD4902NF
NTMFD4902NF/D
4902N
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Untitled
Abstract: No abstract text available
Text: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky
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NTMFD4901NF
NTMFD4901NF/D
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4902N
Abstract: No abstract text available
Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky
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NTMFD4902NF
NTMFD4902NF/D
4902N
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Untitled
Abstract: No abstract text available
Text: NTMFD4C20N Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, Dual N−Channel SO8FL http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses
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NTMFD4C20N
NTMFD4C20N/D
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Untitled
Abstract: No abstract text available
Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky
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NTMFD4902NF
NTMFD4902NF/D
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Q1/HLA-80
Abstract: No abstract text available
Text: NTMFD4C85N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses
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NTMFD4C85N
NTMFD4C85N/D
Q1/HLA-80
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Untitled
Abstract: No abstract text available
Text: NTMFD4C86N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 32 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses
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NTMFD4C86N
NTMFD4C86N/D
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Untitled
Abstract: No abstract text available
Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF − Wettable Flanks Product
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NVMFS4841N
NVMFS4841NWF
AEC-Q101
NVMFS4841N/D
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Untitled
Abstract: No abstract text available
Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature
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NVMFD5877NL
AEC-Q101
NVMFD5877NL/D
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4901n
Abstract: 4901NF 5-06B NTMFD4901NFT1G
Text: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky
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NTMFD4901NF
NTMFD4901NF/D
4901n
4901NF
5-06B
NTMFD4901NFT1G
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4902NF
Abstract: No abstract text available
Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky
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NTMFD4902NF
NTMFD4902NF/D
4902NF
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Untitled
Abstract: No abstract text available
Text: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Q1 Top FET 30 V 6.5 mW @ 10 V Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space
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NTMFD4901NF
NTMFD4901NF/D
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Untitled
Abstract: No abstract text available
Text: NVMFD5877NL, NVMFD5877NLWF Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product
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NVMFD5877NL,
NVMFD5877NLWF
AEC-Q101
NVMFD5877NL/D
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Untitled
Abstract: No abstract text available
Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature
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NVMFD5877NL
AEC-Q101
NVMFD5877NL/D
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NVMFD5877NLT1G
Abstract: 5877NL
Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature
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NVMFD5877NL
AEC-Q101
NVMFD5877NL/D
NVMFD5877NLT1G
5877NL
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5877NL
Abstract: NVMFD5877NLT1G
Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature
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NVMFD5877NL
AEC-Q101
NVMFD5877NL/D
5877NL
NVMFD5877NLT1G
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v4841
Abstract: NVMFS4841NT1G JESD51-12
Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*
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NVMFS4841N
AEC-Q101
NVMFS4841N/D
v4841
NVMFS4841NT1G
JESD51-12
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Untitled
Abstract: No abstract text available
Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky
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NTMFD4902NF
NTMFD4902NF/D
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Untitled
Abstract: No abstract text available
Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable
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NVMFD5877NL
NVMFD5877NLWF
NVMFD5877NL/D
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NVMFD5877NL
Abstract: No abstract text available
Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature
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NVMFD5877NL
AEC-Q101
NVMFD5877NL/D
NVMFD5877NL
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NVMFD5877NL
Abstract: No abstract text available
Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature
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NVMFD5877NL
AEC-Q101
NVMFD5877NL/D
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