SOB 214 Search Results

L7 BL12

Abstract: BJ374C-201 raychem 10613 10613 Raychem M17/L7 BL12
Contextual Info: □ASH m “201 -202 -203 -204 -205 -206 -207 -200 -209 -210 -211 -212 -213 -214 -215 -216 -217 -218 -219 -220 -221 -222 -223 INCH .005 .010 .030 .140 .281 .204 .344 .414 .630 .635 .750 .BOO 1.00 1.25 1.416 1.55 1 .75 1 .BO A CABLES A ACCOMMODATED HEX M17/176-00002

sob 214

Abstract: Trompeter 305 7528A
Contextual Info: DWG S IZ E r— L DASH NO -201 -202 -203 -204 -205 -206 -207 -200 -209 -210 -211 -212 -213 -214 -215 -216 -217 -218 -219 -2 2 0 -221 -222 -223 -301 -3 0 2 -3 0 3 -3D4 CAGLES ACCOMMODATED TABLE 1 A HEX M17/176-00002 TVC-70-1 TWC-124-1A 10602,RAYCHEH TVAC-7B-1F2

PL155ACFL-201

Abstract: Trompeter 305 TROMPETER TAI-143 PL155ACFL TAI-173
Contextual Info: RED INDICATES ORIGINAL DASH ND -201 -202 -203 -204 -205 -2QB -207 -208 -205 -210 -211 -212 -213 -214 -215 -216 -217 -21B -219 -220 -221 -222 -223 -224 -225 CABLES ACCOMODATED M17/175-00002 TWC-78-1 TWC-124-1A 10602, RAYCHEM TWAC-7B-1F2 7B2BD0130, RAYCHEM B3310 BELDEN

Contextual Info: ASAHI KASEl AK2312 Preliminary = - 4.8kbps SPEECH CODEC LSI Over View AK2312 is a low cost CELP based 4.8 kbps speech CODEC LSI. As it has a memory interface for three types of memories DRAM, SRAM, ROM and two set sof serial I/O interface, it can be easily applied to telephone answering machine

Trompeter 305

Contextual Info: S D MDICAÏÏS ORKHM . DATA QKTAINB IN THIS DOCUMENT IS PROPRIETARY TD TH H 'liTBK BLBTnSWICS INC, AND SHALL NOT BE DISCLDSH3. Œ P I S DR U S B TOR PRDOJŒHBiT DR MANUFACTURE WTHOJT EXPRESS WRITT» PBMISSION. REV A DASH NO -201 -202 -203 -204 -205 -2DB -207

TVC 2 HB

Contextual Info: I D NttCAÏÏS fflH M L BATA CONTAINED IN THIS □OO HBfT I S PROPRIETARY TT3 T O t 'L ILH & STR 0NICS INC. AMI SHALL NOT BE DISCLOSO, CDPIH3 OR L B S FOR PROCUREMENT OR HANUFACTlfiE WITHOUT EXPRESS M I T T » PERMISSION. REV P □ASH NO -20! -202 -203 -204

Contextual Info: 3 X Kontaktanordnung c o n ta c t arrangement A 31 27 29 23 25 19 21 15 17 11 13 96 E i n p r e ß - K o n t a k t e 96 p r e s s - ¡ n - c o n t a c t s l 7 9 El _a = 2:1 E in p r e ß - K o n t a k t press-in-contact 10,5*0.1 □ = Kontaktposition nicht belegt

sob 214

Contextual Info: SSP10N6ÖA Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gale Charge Extended Safe Operating Area Lower Leakage Current : 25 jiA M ax. @ VDS= 600V

telefunken 152

Contextual Info: Te m ic BZG04. TELEFUNKEN Semiconductors Silicon Transient Voltage Suppressors Features • • • • • Glass passivated junction High reliability Stand-off voltage range 8.2V to 430V Excellent clamping cabability Fast response time typ. â lps from 0 to

Contextual Info: TRANSIENT VOLTAGE SUPRESSORS 400W SURFACE MOUNT TVS DIODES / DO-214AC CASE 2 400W £ ÿi] _ iw>f t i r _ ÆA-fe-lfS Breakdown Voltage @ It V br TYPE TFMAJ5.0 TFMAJ5.0A TFMAJ6.0 TFMAJ6.0A TFMAJ6.5 TFMAJ6.5A TFMAJ7.0 TFMAJ7.0A

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS ^ 600W SERIES TVS DIODES / 'S i ^ Is DO-214AA CASE 3 600W $ ?>] mm Breakdown Voltage V br TYPE P6FMBJ6.8 P6FMBJ6.8A P6FMBJ7.5 P6FMBJ7.5A P6FMBJ8.2 P6FMBJ8.2A P6FMBJ9.1 P6FMBJ9.1A P6FMBJ10 P6FMBJ10A P6FMBJ11 P6FMBJ11A P6FMBJ12

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 400W SERIES TVS DIODES DO-214AC CASE2 400W t ?'] JfcAisLfàS'Sîjil mm v.p. Breakdown Voltage V br TYPE P4FMAJ6.8 P4FMAJ6.8A P4FMAJ7.5 P4FMAJ7.5A P4FMAJ8.2 P4FMAJ8.2A P4FMAJ9.1 P4FMAJ9.1A P4FMAJ10 P4FMAJ10A P4FMAJ11 P4FMAJ11A

icx060ak

Abstract: sdfw0xxx CCD SENSORS OPB 715 44n30
Contextual Info: PRELIMINARY KS7213 CCD TIMING GENERATOR GENERAL DESCRIPTION 80-QFP-1212 The KS7213 is a timing generator IC which generates the timing pulses necessary for color CCD image sensors. ORERING INFORMATION Device KS7213 FEATURES Package 80-QFP-1212 Operating Temperature

1.5FMCJ220

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / DO-214AB CASE 4 1500W & ?>J t J t # #'] t Breakdown Voltage V TYPE 1.5FMCJ6.8 1.5FMCJ6.8A 1.5FMCJ7.5 1.5FMCJ7.5A 1.5FMCJ8.2 1.5FMCJ8.2A 1.5FMCJ9.1

74HCU04

Abstract: 74LV04D 74LV04N 74LVU04 LVU04 3 level inverter schematic diagram
Contextual Info: b3E T> m NAP C/PHILIPS SEniCOND Philips Semiconductors bbS3^2M 0 0 6 3 7 3 6 202 M S I C 3 Product Specification Hex inverter 74LVU04 QUICK REFERENCE DATA FEATURES GND = 0 V; T ^ = 25°C; t, = t, < 2.5 ns • • • • • • Optimized for Low Voltage applications: 1.0 to 3.6 V

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR - BROWN i ADS610 PRELIMINARY INFORMATION SUBJECT TO CHANGE WITHOUT NOTICE 14-Bit 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • HIGH SPURIOUS-FREE DYNAMIC RANGE: 90dB AT Nyquist

MTC-30585

Contextual Info: MTC-30585 SFSK* PLC* MODEM Data Sheet A dvanced Inform ation Features Applications Complies w ith IEC 1 3 3 4 -5 -1 a n d IEC 1 3 3 4 -4 -3 2 ▼ Complete m odem fo r data communication on p o w e r line T Spread Frequency Shift Keying S-FSK m odulation

8582c

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR - BROW N C ADS703 PRELIMINARY INFORMATION SUBJECT TO CHANGE WITHOUT NOTICE 16-Bit 2.5MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • HIGH SPURIOUS-FREE DYNAMIC RANGE: 92dB AT 1MHz

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR - BROWN« ADS704 PRELIMINARY INFORMATION SUBJECT TO CHANGE WITHOUT NOTICE 18-Bit 500kHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • HIGH SPURIOUS-FREE DYNAMIC RANGE: 100dB AT Nyquist

NS32201

Abstract: cgw RESISTORS op840 hamming encoder IC of XOR GATE tl 2345 ml cgw resistor CIL 108 DP8400-2 DP8400N-2 DP8400V-2
Contextual Info: DP8400-2 National Semiconductor DP8400-2—E2C2 Expandable Error Checker/Corrector General Description memory check bits or DP8400-2S than the single-error cor­ rect configurations. The DP8400-2 has a separate syndrome I/O bus which can be used for error logging or error management. In addition,

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
Contextual Info: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2

DPS-400

Abstract: 68995
Contextual Info: DP8400-2 National Semiconductor DP8400-2—E2C2 Expandable Error Checker/Corrector General Description memory check bits or DP8400-2S than the single-error cor­ rect configurations. The DP8400-2 Expandable Error Checker and Corrector E2C2 aids system reliability and integrity by detecting er­

sob 214

Contextual Info: "HYUNDAI HY52B4DD Series V- 5 1 2 K n B-bit CM DS SRAM PHEUMINAHY DESCRIPTION The HYB2B40D is a high-speed, low pow er and 524.2SB x 9-bits CMDS static RAM fabricated using Hyundai's high perform ance tw in tub CMOS pro le s s technology. This high reliability process coupled w ith innovative circuit

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 600W S E R IE S TVS DIODES / DO-15 CASE 8 600W£ ?•] n n m JL "€i Breakdown Voltage v br TYP E P6KE6.8 P6KE6.8A P6KE7.5 P6KE7.5A P6KE8.2 P6KE8.2A P6KE9.1 P6KE9.1 A P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A