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    SOD-123 MARKING L2 Search Results

    SOD-123 MARKING L2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation
    CEZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation
    CEZ16V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation
    CEZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation
    CEZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation

    SOD-123 MARKING L2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING 43W

    Abstract: sod-123 marking L2 BAT42W BAT43W continental SOD123
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT42W / BAT43W SOD-123 PLASTIC PCAKAGE Marking Codes: BAT42W= L2 with cathode band BAT43W= L3 with cathode band These Diodes Feature Very Low Turn-on Voltage and Fast Switching


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    BAT42W BAT43W OD-123 BAT42W= BAT43W= C-120 Rev020310E MARKING 43W sod-123 marking L2 BAT43W continental SOD123 PDF

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT42W / BAT43W SOD-123 PLASTIC PCAKAGE Marking Codes: BAT42W= L2 with cathode band BAT43W= L3 with cathode band These Diodes Feature Very Low Turn-on Voltage and Fast Switching


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    BAT42W BAT43W OD-123 BAT42W= BAT43W= C-120 Rev020310E PDF

    Contextual Info: SIEMENS BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB619C yellow S 1 =C SOD-123 Q62702-B683 2 =A Maximum Ratings Parameter Symbol Values


    OCR Scan
    BB619C OD-123 Q62702-B683 fl235hOS j2/Cj25 /CT28 023Sfc PDF

    3PHA 20

    Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
    Contextual Info: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は,次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様


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    TYPE/SOD-123 10DDA EP05DA EP05DA40 10JDA 10EDA 10EDB EC10DS 3PHA 20 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra PDF

    SOD-123LF

    Abstract: MBR120VLSFT1 MBR120VLSFT1G MBR120VLSFT3 MBR120VLSFT3G
    Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120VLSFT1 OD-123 SOD-123LF MBR120VLSFT1 MBR120VLSFT1G MBR120VLSFT3 MBR120VLSFT3G PDF

    MBR120

    Abstract: SOD123FL MBR120LSFT1 MBR120LSFT3
    Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120LSFT1 r14525 MBR120LSFT1/D MBR120 SOD123FL MBR120LSFT1 MBR120LSFT3 PDF

    SOD-123LF

    Abstract: MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G SOD-123FL
    Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120LSFT1 OD-123 SOD-123LF MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G SOD-123FL PDF

    L2ED

    Abstract: MBR120ESFT1 MBR120ESFT3
    Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120ESFT1 r14525 MBR120ESFT1/D L2ED MBR120ESFT1 MBR120ESFT3 PDF

    NRVB2H100SFT3G

    Abstract: ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
    Contextual Info: MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR2H100SFT3G, NRVB2H100SFT3G OD-123FL MBR2H100SF/D ON SEMICONDUCTOR MARKING DIAGRAM SOD-123 PDF

    Contextual Info: MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR2H100SFT3G, NRVB2H100SFT3G 123FL MBR2H100SF/D PDF

    Contextual Info: MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR2H100SFT3G, NRVB2H100SFT3G 123FL MBR2H100SF/D PDF

    Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120ESFT1 OD-123 38x38 PDF

    Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120VLSFT1 OD-123 38x38 PDF

    Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120LSFT1 OD-123 38x38 PDF

    MBR120VLSFT1G

    Abstract: MBR120VLSFT3G MBR120VLSFT1 MBR120VLSFT3
    Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120VLSFT1 OD-123 MBR120VLSFT1/D MBR120VLSFT1G MBR120VLSFT3G MBR120VLSFT1 MBR120VLSFT3 PDF

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


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    ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 PDF

    Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high


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    MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G MBR120ESFT1/D PDF

    MBR120LSFT1

    Abstract: MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu
    Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120LSFT1 OD-123 MBR120LSFT1/D MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu PDF

    Contextual Info: MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120ESF, NRVB120ESF OD-123 MBR120ESFT1/D PDF

    MBR120

    Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high


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    MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G OD-123 MBR120ESFT1/D MBR120 PDF

    sod marking L2E

    Abstract: MBR120ESFT1 MBR120ESFT1G MBR120ESFT3 MBR120ESFT3G MBR120 MBR120ESF
    Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120ESFT1 OD-123 MBR120ESFT1/D sod marking L2E MBR120ESFT1 MBR120ESFT1G MBR120ESFT3 MBR120ESFT3G MBR120 MBR120ESF PDF

    Contextual Info: MBR120LSF, NRVB120LSF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120LSF, NRVB120LSF MBR120LSFT1/D PDF

    Contextual Info: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high


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    MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G MBR120LSFT1/D PDF

    MBR120

    Abstract: L2L SOD-123FL
    Contextual Info: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high


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    MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G OD-123 MBR120LSFT1/D MBR120 L2L SOD-123FL PDF