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    SOFT DRIVING Search Results

    SOFT DRIVING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCJ32DR7LV104KW01L
    		Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCJ55DR7LV474KW01L
    		Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV474KW01L
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GCJ31CR7LV473KW01K
    		Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCJ55DR7LV334KW01K
    		Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SOFT DRIVING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MBN1200E33E

    Abstract: gate turn-off igbt control
    Contextual Info: IGBT MODULE MBN1200E33E FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.


    Original     		MBN1200E33E 000cycles) MBN1200E33E gate turn-off igbt control PDF

    mbn1000e33e2

    Abstract: MBN1000
    Contextual Info: IGBT MODULE MBN1000E33E2 Preliminary Specification FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.


    Original     		MBN1000E33E2 000cycles) mbn1000e33e2 MBN1000 PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R3 MBN1500E33E3 FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.


    Original     		IGBT-SP-10002 MBN1500E33E3 000cycles) PDF

    z7my

    Abstract: Z7my7g7 MBM1200E17E z7m-y7g7 z7m-y7g7# T61200
    Contextual Info: IGBT MODULE MBM1200E17E Preliminary SPEC. OUTLINE DRAWING Unit in mm FEATURES * Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. * Low driving power: Low input capacitance advanced trench gate. * Low noise recovery: Ultra soft fast recovery diode.


    Original     		MBM1200E17E 000cycles) z7my Z7my7g7 MBM1200E17E z7m-y7g7 z7m-y7g7# T61200 PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08020 R4 MBM500E33E2 Preliminary Specification FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.


    Original     		IGBT-SP-08020 MBM500E33E2 000cycles) PDF

    QT10031U21MS

    Abstract: QT10044U21MS QT10210U21MS 3 phase, 415v and 11 kw induction motor QT20058 QT10017U21MS QT1010 QT10310N21MS 18S-G QT10210N21MS
    Contextual Info: GE Consumer & Industrial Power Protection New ASTAT XT Digital soft starters for 3ph standard induction motors GE imagination at work ASTAT XT ASTAT XT D Digital soft starters for 3ph standard induction motors in Digital Soft Starters G new ASTAT XT solid state soft starter features microprocessor control


    Original     		H-1340 B-9000 C/4594/E/EX QT10031U21MS QT10044U21MS QT10210U21MS 3 phase, 415v and 11 kw induction motor QT20058 QT10017U21MS QT1010 QT10310N21MS 18S-G QT10210N21MS PDF

    DIODE A112

    Abstract: ph-77d diode 71DH acc8
    Contextual Info: Spec.No.IGBT-SP-06039R3 P 1 IGBT MODULE MBN3600E17E Preliminary SPECIFICATION FEATURES OUTLINE DRAWING ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		IGBT-SP-06039R3 MBN3600E17E 000cycles) DIODE A112 ph-77d diode 71DH acc8 PDF

    MBN1500E33E2

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2 PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-05004 MBN1200E33E 000cycles) PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-09008 MBN750H65E2 000cycles) PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-05015 MBN800E33E 000cycles) PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08006 R2 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-08006 MBN1000E33E2 000cycles) PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-09008 MBN750H65E2 000cycles) PDF

    mbn1000e33e2

    Abstract: Hitachi DSA00281
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08006 R1 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-08006 MBN1000E33E2 000cycles) mbn1000e33e2 Hitachi DSA00281 PDF

    95020

    Abstract: PA4201 019 dfn 5.1 home theatre circuit diagram home theater 5.1 circuit diagram
    Contextual Info: PA4201-PUNK POP-UP NOISE KILLER FEATURES Extremely low supply current <1µA >45dB mute attenuation Shunt operation. SOFT mute during normal operation. Built-in expansion capability. Soft Mute out for driving additional channels. Instant Power UP and Power DOWN muting.


    Original     		PA4201-PUNK PA4201 EIA-481. Suffix-T13 95020 PA4201 019 dfn 5.1 home theatre circuit diagram home theater 5.1 circuit diagram PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-05004 MBN1200E33E 000cycles) PDF

    MBN1500E33E2

    Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2 ls290 MBN1500E33E nff 16-102 IC1500 GC 72 PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-08002 MBN1500E33E2 000cycles) PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-05015 MBN800E33E 000cycles) PDF

    shin-etsu g747

    Abstract: silicon thermal grease g747
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-08038 MBL800E33E 000cycles) shin-etsu g747 silicon thermal grease g747 PDF

    Hitachi DSA00281

    Abstract: 330nf 250 v
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-10002 MBN1500E33E3 000cycles) Hitachi DSA00281 330nf 250 v PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08006 R3 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-08006 MBN1000E33E2 000cycles) PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R5 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-10002 MBN1500E33E3 000cycles) PDF

    silicon thermal grease g747

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		IGBT-SP-08038 MBL800E33E 000cycles) silicon thermal grease g747 PDF