SOI SERIES SHUNT Search Results

Modeling of SOI FET for RF Switch Applications

Contextual Info: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is

ESD Considerations for SOI Switch Design

Contextual Info: ESD Considerations for SOI Switch Design Yuh-Yue Chen, Tzung-Yin Lee, Ed Lawrence, and Jeffrey Woods Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Email: yuhyue.chen@skyworksinc.com, Tel: 949 231-3083 This paper proposes a solution that employs transistor

Contextual Info: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of

Optimized CMOS-SOI Process for High Performance RF Switches

Contextual Info: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in

Contextual Info: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna

Choosing the Right RF Switches for Smart Mobile Device Applications

Contextual Info: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than

900mhz-1800mhz rf frequency amplifier circuit

Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
Contextual Info: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

rf transistors amplifier design and matching network

Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH ISL73128RH 6 "transistor arrays" ic
Contextual Info: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays Introduction ISL73096RH This application note is focused on exploiting the RF design capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design

Contextual Info: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords

900mhz-1800mhz rf frequency amplifier circuit

Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt
Contextual Info: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

Contextual Info: MOLDED NYLON INSULATING 11 T X T RoHS COMPLIANT BUSHING TERMINAL - GOLD PLATED SPRINGS WITH GOLD A L L O Y C ONTACTS ON R I N G S P R I N G S AN D S H U N T S P R I N G S WHEN SHUNTS - ARE BLANK PC USED - - SOLDER 0.078 PCS MOLDED INSULATING NYLON BUSHING

Q545

Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ
Contextual Info: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

stacked transistor shunt switch

Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Contextual Info: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor

rf mems switch spst

Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Contextual Info: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.

Contextual Info: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices the MK3727D and MK3727C offer a wider

Contextual Info: NCR92C120 FUNCTIONAL DESCRIPTION The NCR92C120 functions as an Ethernet LAN controller M AC integrated with a M anchester Encoder/D ecoder (PLS), an A ttachm ent U nit Interface (A U I), and a 10B A SE-T transceiver (PM A). A n o n -ch ip crystal oscillator is also p ro ­

Contextual Info: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider

Contextual Info: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider

sta 512

Contextual Info: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider

Contextual Info: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider

MAN05

Abstract: MK3727 MK3727C MK3727D MK3727DTR MK3727S MK3727SLFTR
Contextual Info: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider

PE42480

Contextual Info: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding

D44C5

Contextual Info: , Una. J. Cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 D45C5 Silicon PNP Power Transistors DESCRIPTION • • • • Low Saturation Voltage Good Linearity of hFE Fast Switching Speeds Complement to Type D44C5

Contextual Info: CXA4420GC SP5T+ SP5T SOI Antenna Switch with MIPI Interface for Qualcomm chipset CXA4420GC Description CXA4420GC is the SP5T+SP5T antenna diversity switch for WCDMA/3G/LTE applications. CXA4420GC has a 1.8 V CMOS compatible decoder with Qualcomm chipset. The SONY Silicon On Insulator SOI technology is used for low insertion loss.