SONY SRF Search Results

STM-0028

Abstract: tDa 8221 DIODE marking 7BA TDA6120Q SOT110 DBS13P SS-00259 TDA6120 PEAK tray drawing sot193
Contextual Info: SONY M nu$=t * 1. Type No. / Manufacturer’s Name TDA6120 2. Structure Series / / }& PHILIPS SEMICONDUCTORS ifii MIXED BIP / 3. Use —1 DMOS Function ffliÉ • W M 30MHz / 125Vpp Video Output Amplifier 4. Package / Materials DBS 13P / Plastic 4.1 Dimensions

ITT shg 1 diode

Abstract: ITT Diode SHG 2 ITT shg 1.5 diode ICX098BQ ITT SHG 1,5 sony kv sony ICX098BQ ICX098BQ-F
Contextual Info: SONY ICX098BQ &fÄ4.5mm 1/4SÜ 7 fritti; Jjÿ il IC X098BQ fä, M M 4.5mm ( l / 4 S I ) VGA*ÎJft<£>IE > M c c D [ H f « i» :f-'eto «t I9 , f à l / 3 0 & " C £ X < D 1 & z.ktfñtí%Tto ttz, \z* •i - ? i; $ e L T 7 ;i/ 7 i / - A < ^ l# ib ïl£ # à £ t ^ T r è î i " 0

ICX229AL

Abstract: BFM 17A CXD1267 ICX209AL LTCM500S
Contextual Info: SONY ICX229 A L f i , ICX229AL CCIR1j ^ D ÔH t itzj ? a y m c c o m m t i f ä r n ^ t « pdb ICX209 A L K 2 Í U * 5 7 # 1É £ ; f c i] K [ p J ± L , Tñ £ |IM L T V ' I t o ' i fc, Super HAD CCD m ^ x io m ïÈ M , hT'^ & H i* /ïy V -V y * ^ L í 1"o

ICX227AL

Abstract: LTCM500S sony ilx CCD S HJ62
Contextual Info: SONY ICX227AL ICX227ALÜ, C C Ï R j î ^ C O É l t í f t A ^ 7 hZM L f z 'O ÿ ÿ 't y w .c c D m m m m ^ 'to ICX207ALHM L , #14 è ttz, #£<£ ç ® *, K « nnn K Iß] ± L , tñ Super HAD CCD n m u in ^ - z m Ä L x ^ ito jg a j if L t ö v , m fâ w é ftiïv

CXA1951AQ

Abstract: 331J04 16MHZ
Contextual Info: SONY C X A 1 9 5 1 A Q G P S £ ^ > = l> A —£ CXA1951AQÍÍ, X W i m W i i t, / h m * v >r ~ V T & * ,& W }fàG P SizM L f a c e t o t ixm * H il L H GPS3 L X .< D fâ M & & X l2ï f r £ t o Y - Ï i V Y ' i > H lO Q ä B & ± .$ : f ä i % L X \ / '£ t a

SSL0804T-4R7

Abstract: ssl 110 sn
Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS SMD Power Inductors SSL0618 Series For SSL series provide excellent current carrying capabilities in a small footprint. They have a flat top for reliable pick and place operations and features robust temperature deflection. In addition

Contextual Info: AO4720 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side

Contextual Info: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7700 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product

AO4714

Contextual Info: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AO4720

Abstract: SRFE
Contextual Info: AO4720 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side

AO4714

Contextual Info: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

Contextual Info: AO4716 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is

Contextual Info: AO4718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in

AO4722

Contextual Info: AO4722 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in

Contextual Info: AON7702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7702 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product

Contextual Info: AON7704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7704 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in general purpose applications. Standard Product AON7704 is

SL1016

Abstract: SONY CHOKE SL06 472K sl0608 SL0609 B 80 SL0406 d2-3339
Contextual Info: Leaded Choke Coils – SL Series SL Series Features � Low cost � Wide range of inductance � High reliability Product Identification Electrical Parameters Material D2 Tolerance (J:± 5 %.K:±10%.M:±20%) Item Inductance T:UL tube C:Clear coating core HT

AO4724

Contextual Info: AO4724 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4724 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in

Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS SMD Power Inductors SDS0402 Series These shielded ultra-miniature inductors can help designers achieving significantly longer battery life in handheld communication devices and other portable products. The SDS0402 Series offers the highest efficiency, smallest size and lowest cost of any comparable

SSL0503HC-1R2

Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS SMD Power Inductors SSL0503HC Series These series have been specially designed for high current, low voltage DC-DC converter applications. This simple, rugged design provides current ratings normally available only in much larger packages

24v 5a smps

Abstract: AO4716
Contextual Info: AO4716 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is

AON6712

Contextual Info: AON6712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON6712 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

Contextual Info: AON3702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

Contextual Info: AOD492 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,