SOT 228 MARKING Search Results

TR13

Abstract: 20x20x10
Contextual Info: Package Details - SOT-228 Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (11-March 2005) Package Details - SOT-228

EIA-481-1-A

Abstract: Standard EIA-481-1-A
Contextual Info: Package Details SOT-228 Case Mechanical Drawing Lead Code: Part Marking: Full Part Number Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R1 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details SOT-228 Case Tape Dimensions and Orientation (Dimensions in mm)

MARKING 67 SOT89

Abstract: transistor 5551 sot-89 marking code transistor sot code amplifier marking code D amplifier marking code a transistor sot sot-223 code marking 5551 datasheet SOT89 MARKING CODE
Contextual Info: PRODUCT announcement Higher Current, High Voltage NPN Transistors SOT-228 SOT-223 SOT-89 SOT-23 SOT-563 Dual Single Single Single Single Sample Devices features • Higher current than standard 5551 available 1.0 Amp vs. standard current 600mA • Single and Dual configurations

SOT89 transistor marking

Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Contextual Info: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications

by 228 v

Contextual Info: Central CYTA94D TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED PNP HIGH VOLTAGE SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA94D type consists of two 2 isolated PNP high voltage silicon transistors packaged in an epoxy molded SOT-228 surface mount case.

by 228 v

Abstract: CYTA44D SOT228 11-Au
Contextual Info: CYTA44D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA44D type consists of two 2 isolated NPN high voltage silicon transistors packaged in an epoxy molded SOT-228 surface mount case.

by 228 v

Contextual Info: CYTA44D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA44D type consists of two 2 isolated NPN high voltage silicon transistors packaged in an epoxy molded SOT-228 surface mount case.

Contextual Info: CYT5551D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two 2 isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial

CYT5551D

Contextual Info: CYT5551D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two 2 isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial

Contextual Info: Central CYT5401D TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED PNP HIGH VOLTAGE SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5401D type consists of two 2 isolated PNP high voltage silicon transistors packaged in an epoxy molded SOT-228 surface mount case.

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

Contextual Info: CYTA94D SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA94D type consists of two 2 isolated PNP high voltage silicon transistors packaged in an epoxy molded SOT-228

Contextual Info: CYTA44D SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA44D type consists of two 2 isolated NPN high voltage silicon transistors packaged in an epoxy molded SOT-228

Contextual Info: CYT5401D SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5401D type consists of two 2 isolated PNP high voltage silicon transistors packaged in an epoxy molded SOT-228

Contextual Info: CYT7090LD SURFACE MOUNT DUAL, ISOLATED LOW VCE SAT PNP SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT7090LD consists of two (2) isolated Low VCE(SAT) PNP Power Transistors packaged in an epoxy molded SOT-228

CYT5551D

Contextual Info: CYT5551D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two 2 isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process,

Contextual Info: CYT3019D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT3019D type consists of two 2 isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. This SUPERmini device is manufactured by

Contextual Info: CYT4033D SURFACE MOUNT DUAL, ISOLATED PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT4033D type consists of two 2 isolated PNP silicon transistors packaged in an epoxy molded SOT-228 surface mount case. This SUPERmini device is manufactured by

Contextual Info: Plastic Packaged 0 Alpha Surface Mount PIN Diodes SMP1300 Series Features • Industry Standard Outlines ■ Designed for High Performance Switches & Attenuators ■ Single and Dual Diode Configurations ■ Low Inductance Designs for Microwave Applications

Contextual Info: NL27WZ16 Dual Buffer The NL27WZ16 is a high performance dual buffer operating from a 2.3 to 5.5 V supply. At VCC = 3 V, high impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance.

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

marking code vf

Abstract: LM1MA142K diode IR 100 2K
Contextual Info: FM120-M+ LM1MA141K THRU LM1MA142K Single Silicon Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

mosfet SOD 23

Contextual Info: WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ 200 mAmps, 50 Volts Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ THRU BSS84WT1 FM1200-M+ Power MOSFET mAmps, 50 Volts 130 BARRIER 1.0A SURFACE MOUNT SCHOTTKY RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.