Si2309DS
Abstract: Si2309DS-T1
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code
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Si2309DS
O-236
OT-23)
Si2309DS-T1
Si2309DS-T1-E3
18-Jul-08
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Si2309DS
Abstract: Si2309DS-T1 7083
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code
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Si2309DS
O-236
OT-23)
Si2309DS-T1
Si2309DS-T1-E3
08-Apr-05
7083
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2N603L
Abstract: Q67060-S7213 BSP603S2L
Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 33 mΩ ID 5.2 A SOT 223 Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified
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BSP603S2L
Q67060-S7213
2N603L
2N603L
Q67060-S7213
BSP603S2L
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2N615L
Abstract: Q67060-S7211 BSP615S2L
Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified
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BSP615S2L
Q67060-S7211
2N615L
2003-10-2y
2N615L
Q67060-S7211
BSP615S2L
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2N615L
Abstract: 55B5 BSP615S2L 2N615
Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified
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BSP615S2L
Q67060-S7211
2N615L
2N615L
55B5
BSP615S2L
2N615
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2N603L
Abstract: Q67060-S7213 BSP603S2L d52a
Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified
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BSP603S2L
Q67060-S7213
2N603L
2N603L
Q67060-S7213
BSP603S2L
d52a
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Untitled
Abstract: No abstract text available
Text: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic
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CM1218
MIL-STD-883D
OT23-3
419AH
CM1218/D
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Untitled
Abstract: No abstract text available
Text: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic
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CM1218
CM1218
CM1218/D
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Marking L2 Packaging SOT23-6
Abstract: D237 DIODE MF SOT23-3 D231 diode marking L2 SOT23 6 D234 DIODE s7 sot23 marking code D234 1A sot143 usb tvs d232
Text: CM1213A 1, 2 and 4-Channel Low Capacitance ESD Protection Arrays Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting
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CM1213A
CM1213A/D
Marking L2 Packaging SOT23-6
D237 DIODE
MF SOT23-3
D231 diode
marking L2 SOT23 6
D234 DIODE
s7 sot23 marking code
D234 1A
sot143 usb tvs d232
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Untitled
Abstract: No abstract text available
Text: CM1213A 1, 2 and 4-Channel Low Capacitance ESD Protection Arrays Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting
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CM1213A
CM1213A
CM1213A/D
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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D232 sot143
Abstract: D232 CM1213A-01SO MARKING 318 SC70-6 marking D232 s7 sot23 marking code CM1213A-02SR sot143 usb tvs d232 .318 SC70-6
Text: CM1213A 1, 2 and 4-Channel Low Capacitance ESD Protection Arrays Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting
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CM1213A
CM1213A/D
D232 sot143
D232
CM1213A-01SO
MARKING 318 SC70-6
marking D232
s7 sot23 marking code
CM1213A-02SR
sot143 usb tvs d232
.318 SC70-6
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Untitled
Abstract: No abstract text available
Text: CM1213A 1, 2 and 4-Channel Low Capacitance ESD Protection Arrays Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting
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CM1213A
CM1213A
CM1213A/D
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sot143 usb tvs d232
Abstract: 318 SC70-6 .318 SC70-6
Text: CM1213A 1, 2 and 4-Channel Low Capacitance ESD Protection Arrays Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting
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CM1213A
CM1213A/D
sot143 usb tvs d232
318 SC70-6
.318 SC70-6
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SI3016
Abstract: No abstract text available
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D D D D D D D D D D D D D D D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
SI3016
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intel 845 MOTHERBOARD pcb CIRCUIT diagram
Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
Text: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL128/D
Mar-2002
r14525
DL128
intel 845 MOTHERBOARD pcb CIRCUIT diagram
200D6 SMD DIP-8
marking code E5 SMD ic sot23-5
4256 bwp
TRANSISTOR SMD 6CW
TL494 car charger schematic diagram
SMD 6cw
LM385 1.25V zener
6cw smd code marking
mc7812a
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Si3016
Abstract: diode sod-123 marking code l8 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
Si3016
diode sod-123 marking code l8
TMS320C54V90
TMS320C54V90BGGU
TMS320C54V90BPGE
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Si3016
Abstract: DQ1 relay dec BLM21B102S H8 SOT-23 bav99 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE n5 s101 transistor Schottky Diode 5V 6A atx 203 relay
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
Si3016
DQ1 relay dec
BLM21B102S
H8 SOT-23 bav99
TMS320C54V90
TMS320C54V90BGGU
TMS320C54V90BPGE
n5 s101 transistor
Schottky Diode 5V 6A
atx 203 relay
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Si3016
Abstract: BCP56T1 BLM21B102S TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE TOP MARKING C1 ROHM sot23-4 marking a1
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D D D D D D D D D D D D D D D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
Si3016
BCP56T1
BLM21B102S
TMS320C54V90
TMS320C54V90BGGU
TMS320C54V90BPGE
TOP MARKING C1 ROHM
sot23-4 marking a1
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SI3016
Abstract: No abstract text available
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D D D D D D D D D D D D D D D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
SI3016
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel PinCtonfigu ation 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter
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Q62702-F1132
OT-23
T073H
400Mh
fl235b05
PlS174fl
fl235bGS
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c 879 transistor
Abstract: Transistor bc 879 S879T transistors BC 293 low noise transistors vhf bc238C S779T
Text: TELEFUNKEN ELECTRONIC file D • fi'JSOO'lb 0005432 T H A L 6 6 i Marked with: 779 T n ilL itF IU lK lK iK l electronic Creative Technologies Marked with: 879 S 779 T S 879 T Silicon PNP RF Transistor Applications: UHF/VHF high current input and mixer stages
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S779T
S879T
569-GS
c 879 transistor
Transistor bc 879
S879T
transistors BC 293
low noise transistors vhf
bc238C
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0415C
Abstract: SB7C652-5N40
Text: Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller PIN CONFIGURATION DESCRIPTION i a K IÜI BUS The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51
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87C652
87C652
80C51
80C51.
16-bit
80C51)
0415C
SB7C652-5N40
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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