SOT 26 DUAL N-CHANNEL MOSFET Search Results

Contextual Info: SPICE MODEL: DMN601DMK DMN601DMK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70

marking code k7k transistor date code 38

Abstract: DMN601DMK DMN601DMK-7 marking code k7k transistor
Contextual Info: DMN601DMK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 Low Input/Output Leakage

DMN2004DMK

Abstract: DMN2004DMK-7
Contextual Info: SPICE MODEL: DMN2004DMK DMN2004DMK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · · · · · · Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60

DMN5L06DMK

Contextual Info: SPICE MODEL: DMN5L06DMK DMN5L06DMK Lead-free Green NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · · · Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60

CMXDM7002A

Abstract: X02A 2N7002
Contextual Info: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

APM2701

Abstract: APM2701C APM27 STD-020C
Contextual Info: APM2701C Dual Enhancement Mode MOSFET N and P-Channel Pin Description Features • N-Channel 20V/3A, RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • Top View of SOT-26 P-Channel -20V/-1.5A, RDS(ON)=145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V

P-Channel MOSFET code L 1A

Abstract: APM2700C STD-020C single P-Channel mosfet sot-26
Contextual Info: APM2700C Dual Enhancement Mode MOSFET N and P-Channel Pin Description Features • N-Channel 20V/1.8A, RDS(ON)=170mΩ(typ.) @ VGS=4.5V RDS(ON)=270mΩ(typ.) @ VGS=2.5V • P-Channel Top View of SOT-26 -20V/-1.2A, RDS(ON)=360mΩ(typ.) @ VGS=-4.5V RDS(ON)=530mΩ(typ.) @ VGS=-2.5V

8205 A mosfet

Abstract: 8205 A battery 8205 mosfet Dual N-Channel MOSFET 8205 8205 dual mosfet 8205* MOSFET FHK8205 8205 A 8205 6 pin mosfet 8205
Contextual Info: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET FHK8205 Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 SOT-26 DESCRIPTION & FEATURES 概述及特點 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻

9926 mosfet

Abstract: F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926
Contextual Info: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 FHK9926 DESCRIPTION & FEATURES 概述及特點 SOT-26 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻

X02A

Abstract: CMXDM7002A 2N7002
Contextual Info: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

WTL2622

Contextual Info: WTL2622 Dual N-Channel Enhancement Mode MOSFET 6 DRAIN P b Lead Pb -Free DRAIN CURRENT 520mAMPERES DRAIN SOURCE VOLTAGE 50 VOLTAGE 1 GATE 5 SOURCE Features: 6 4 DRAIN * Low Gate charge * Surface Mount Package 1 2 5 4 3 SOT-26 3 GATE 2 SOURCE Maximum Ratings (TA

TSM9966D

Abstract: TSM9966DCX6 sot 26 Dual N-Channel MOSFET
Contextual Info: TSM9966D 20V Dual N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 1 6. Source 1 2. Drain 5. Drain 3. Gate 2 4. Source 2 20 Features ID (A) 30 @ VGS = 4.5V 6.0 40 @ VGS = 2.5V 5.2 Block Diagram ● Advance Trench Process Technology

TSM3900D

Abstract: sot 26 Dual N-Channel MOSFET
Contextual Info: TSM3900D 20V Dual N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 20 Features ID (A) 55 @ VGS = 4.5V 2.0 70 @ VGS = 2.5V 1.5 110 @ VGS = 1.8V 1.0 Block Diagram ●

Contextual Info: TSM3900D 20V Dual N-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(m) 20 Features ID (A) 55 @ VGS = 4.5V 2.0 70 @ VGS = 2.5V 1.5 110 @ VGS = 1.8V 1.0 Block Diagram 

Contextual Info: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 25 @ VGS = 4.5V 5.4 33 @ VGS = 2.5V 4.3 Block Diagram ● Advance Trench Process Technology

4800 mosfet

Abstract: esd protect mosfet sot 26 Dual N-Channel MOSFET f 0472 N-Channel MOSFET TSM6988D mosfet 4800
Contextual Info: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 25 @ VGS = 4.5V 5.4 33 @ VGS = 2.5V 4.3 Block Diagram ● Advance Trench Process Technology

TSM6988D

Abstract: N-Channel mosfet sot-26
Contextual Info: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 35 @ VGS = 4.5V 6.0 40 @ VGS = 2.5V 5.0 Block Diagram ● Advance Trench Process Technology

SOT-26 A11

Abstract: TSM2611ED
Contextual Info: TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 Features ID (A) 20 @ VGS = 4.5V 6 28 @ VGS = 2.5V 5 Block Diagram ● Advance Trench Process Technology

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

mgb20n40cl

Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

mgb20n40cl

Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

2N6284 inverter schematic diagram

Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular