SOT 2955 Search Results

44H11

Abstract: A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120
Contextual Info: Bipolar Power Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

Contextual Info: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP

NT 2955 ON transistor

Abstract: Marking 2955 MMFT2955ET1 fr 2955 2N3904 AN569 MMFT2955E MMFT2955ET3 SMD310 2955 DPAK
Contextual Info: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP

2955 sot223

Abstract: NTF2955 NTF2955T1 NTF2955T3 MJ 2955 data 2955 SOT-223 P-channel sot-223
Contextual Info: NTF2955 Power MOSFET −60 V, 2.4 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters

2955G

Abstract: NTF2955P NTF2955T1G NTF2955 NTF2955T1 MS10
Contextual Info: NTF2955, NTF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Packages are Available Applications • • • • Power Supplies

a2955

Abstract: 2955 mosfet 2955 SOT-223
Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes Applications • • • • Power Supplies PWM Motor Control Converters Power Management

NTF2955

Abstract: NTF2955T1 NTF2955T3 50Vds
Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters

2955E

Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.

NTF2955T1G

Contextual Info: NTF2955, NVF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955 These Devices are Pb−Free and are RoHS Compliant

2955E

Abstract: TD 1409
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.

2955E

Abstract: equivalent transistor 2955e microdot assembly instructions AN569 MMFT2955E MMFT2955ET1 MMFT2955ET1G MMFT2955ET3
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.

2955e

Abstract: equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control Power MOSFET 12 Amps, 60 Volts p-Channel h 2n3904 MARKING QG 6 PIN PWM techniques to-261
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.

Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant

2955g

Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant

zt751

Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30

Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET

Marking 2955

Abstract: MMFT2955ET1 MMFT2955E 2955 mosfet
Contextual Info: MOTOROLA O rder this docum ent by M M FT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S medium pow er M O SFET designed to withstand high energy in the avalanche and com m uta­

NT 2955 ON transistor

Abstract: Marking 2955 transistor k 4212 fet FT2955E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t T ran sisto r P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M FT2955E M o to ro la P re fe rre d D e v ic e TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM

U/25/20/TN26/15/850/yd 803 ic

Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520

3055t

Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
Contextual Info: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

T2-955V

Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
Contextual Info: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge