SOT 89 2SD965 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package

Contextual Info: SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR NPN 1. BASE FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR NPN 1. BASE FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD965A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR NPN 1. BASE FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: 2SD965A SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 2.6 4.25 2.4 3.75 Features — 0.8 MIN Audio amplifier Flash unit of camera Switching circuit — — 0.44 0.37 Parameter Value Units VCBO Collector-Base Voltage

2SD965AL-AB3-R

Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89

Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistors 2SD965-Q SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Low collector-emitter saturation voltage VCE sat ● Satisfactory operation performances at high efficiency with

Contextual Info: Product specification 2SD965-Q SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Low collector-emitter saturation voltage VCE sat ● Satisfactory operation performances at high efficiency with 3.00±0.1 0.80±0.1 0.53±0.1

2SD965

Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR 1 SOT-89 FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 1 TO-252

2SD965A

Contextual Info: 2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4  Audio amplifier  Flasg unit of camera  Switching circuit 1 E CLASSIFICATION OF hFE 2

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK