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    SOT 89 MOS FET Search Results

    SOT 89 MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SOT 89 MOS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XP161A01A8PR

    Abstract: No abstract text available
    Text: XP161A01A8PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.18Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A01A8PR is a N-Channel Power MOS FET with low on-state


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    PDF XP161A01A8PR OT-89 XP161A01A8PR OT-89

    XP161A0390PR

    Abstract: No abstract text available
    Text: XP161A0390PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.09Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A0390PR is a N-Channel Power MOS FET with low on-state


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    PDF XP161A0390PR OT-89 XP161A0390PR OT-89

    XP162A01B5PR

    Abstract: No abstract text available
    Text: XP162A01B5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.25Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A01B5PR is a P-Channel Power MOS FET with low on-state


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    PDF XP162A01B5PR OT-89 XP162A01B5PR OT-89

    8A SOT-89

    Abstract: XP162A02D5PR
    Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state


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    PDF XP162A02D5PR OT-89 XP162A02D5PR OT-89 8A SOT-89

    XP162A02D5PR

    Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
    Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state


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    PDF XP162A02D5PR OT-89 XP162A02D5PR OT-89 XP162A11C0PR XP162A12A6PR sot89 fet XP162A11

    XP161A02A1PR

    Abstract: No abstract text available
    Text: XP161A02A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A02A1PR is a N-Channel Power MOS FET with low on-state


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    PDF XP161A02A1PR OT-89 XP161A02A1PR OT-89

    XP162A11C0PR

    Abstract: XP162A11copr
    Text: XP162A11C0PR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.28 Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package • General Description ■ ● ● ● ● Applications


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    PDF XP162A11C0PR XP162A11COPR XP162A11C0PR

    XP161A1355PR

    Abstract: No abstract text available
    Text: XP161A1355PR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.05Ω max Ultra High-Speed Switching SOT-89 Package Gate Protect Diode built-in • General Description ■ ● ● ● ● Applications


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    PDF XP161A1355PR OT-89 XP161A1355PR

    XP162A12A6PR

    Abstract: 3ssot
    Text: XP162A12A6PR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17 Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package • General Description Applications Notebook PCs Cellular and portable phones


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    PDF XP162A12A6PR XP162A12A6PR 3ssot

    XP161A11A1PR

    Abstract: sot 89 MOS FET
    Text: XP161A11A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Gate Protect Diode Built-in ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A11A1PR is a N-Channel Power MOS FET with low on-state


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    PDF XP161A11A1PR OT-89 XP161A11A1PR sot 89 MOS FET

    XP161A1265PR

    Abstract: No abstract text available
    Text: XP161A1265PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.055Ω MAX ◆ Gate Protect Diode Built-in ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A1265PR is a N-Channel Power MOS FET with low on-state


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    PDF XP161A1265PR OT-89 XP161A1265PR

    FET SOT-89

    Abstract: marking JE FET 2SJ288 smd marking JE MARKING JE 2SJ28 RL120 SOT89 FET marking
    Text: MOSFET SMD Type P-Channel MOS Silicon FET 2SJ288 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Low on resistance Very high-speed switching 1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 Low-voltage drive +0.1


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    PDF 2SJ288 OT-89 -250mA --250mA FET SOT-89 marking JE FET 2SJ288 smd marking JE MARKING JE 2SJ28 RL120 SOT89 FET marking

    smd marking JD

    Abstract: MARKING 60 SOT-89 JD FET MARKING KEXIN 2SJ287 SOT89 FET marking
    Text: MOSFET SMD Type P-Channel MOS Silicon FET 2SJ287 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Low on resistance +0.1 2.50-0.1 Very high-speed switching Low-voltage drive 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1


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    PDF 2SJ287 OT-89 -250mA --250mA smd marking JD MARKING 60 SOT-89 JD FET MARKING KEXIN 2SJ287 SOT89 FET marking

    MXR9745RT1

    Abstract: FET SOT-89 N-Channel MXR9745T1 small signal transistor MOTOROLA motorola power fet rf High Dynamic Range FET sot-89
    Text: MOTOROLA Order this document by MXR9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T1 MXR9745RT1 N–Channel Enhancement–Mode MOSFET 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET


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    PDF MXR9745T1/D MXR9745T1 MXR9745RT1 MXR9745RT1 MXR9745T1 FET SOT-89 N-Channel small signal transistor MOTOROLA motorola power fet rf High Dynamic Range FET sot-89

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


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    PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    full bridge pwm controller sg3526

    Abstract: tl494 smps battery charger SOLUTION FOR SMPS USING TL494 MC78LC00H MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 full bridge sg3526 application notes uc3844 smps power supply converter ic tl494 mosfet tl494 PWM dc to dc boost regulator SG3525A application note
    Text: Power Supply Circuits In Brief . . . In most electronic systems, some form of voltage regulation is required. In the past, the task of voltage regulator design was tediously accomplished with discrete devices, and the results were quite often complex and costly.


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    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


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    PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    tl494 PWM dc to dc boost regulator

    Abstract: full bridge sg3526 application notes trickle battery charger circuit using scr uc3845 half bridge LM317 0 to 12 volts voltage regulator MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 forward converter uc3844 Buck converter with tl494 dc voltage regulator circuit using SCR full bridge pwm controller sg3526
    Text: Linear Voltage Regulators Fixed Output These low cost monolithic circuits provide positive and/or negative regulation at currents from 100 mA to 3.0 A. They are ideal for on–card regulation employing current limiting and thermal shutdown. Low VDiff devices are offered for battery


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    PDF LM2931 tl494 PWM dc to dc boost regulator full bridge sg3526 application notes trickle battery charger circuit using scr uc3845 half bridge LM317 0 to 12 volts voltage regulator MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 forward converter uc3844 Buck converter with tl494 dc voltage regulator circuit using SCR full bridge pwm controller sg3526

    n06hd

    Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
    Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and


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    PDF TND310 TND310/D n06hd N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220

    2kW flyback PFC

    Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
    Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg


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    PDF D-90439 D-70499 D-81679 B-1060 N60S5 O-220 OT-223 2kW flyback PFC transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter

    UC3842 smps design with TL431

    Abstract: atx power supply UC3842 diagram controller for PWM fan tl494 design smps 500 watt TL494 differences uc3842a uc3842b 250 watt uc3844 smps schematic TL494 AC-DC 150W application P6N60 600 watt uc3844 smps schematic MC34063 boost step up 24v
    Text: SMPSRM/D Rev. 2, Apr-2000 ON Semiconductor PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    PDF Apr-2000 UC3842 smps design with TL431 atx power supply UC3842 diagram controller for PWM fan tl494 design smps 500 watt TL494 differences uc3842a uc3842b 250 watt uc3844 smps schematic TL494 AC-DC 150W application P6N60 600 watt uc3844 smps schematic MC34063 boost step up 24v

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    marking code v6 SOT23

    Abstract: ANALOG DEVICES MARKING DATE CODE marking L5 sot363 marking code v6 29 DIODE SOT-363 marking h2 H2 sc-88a ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information
    Text: MC74VHC1G66 Analog Switch The MC74VHC1G66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This bilateral switch controls analog


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    PDF MC74VHC1G66 MC74VHC4066. marking code v6 SOT23 ANALOG DEVICES MARKING DATE CODE marking L5 sot363 marking code v6 29 DIODE SOT-363 marking h2 H2 sc-88a ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information

    Untitled

    Abstract: No abstract text available
    Text: VP3203 yjß S u p e rte x in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering nformation Order Number / Package BV0SS/ ^ D S O N ' d (ON ) BVDgs (max) (min) TO-92 TO-243AA* Dice* -30V 0.6Q 4.0A VP3203N3 VP3203N8 VP3203ND * Sam e as SOT«89. * MIL visual screening available.


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    PDF VP3203 VP3203N3 O-243AA* VP3203N8 VP3203ND