SOT R25 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

SOT R23

Abstract: 2SC3356 marking R24 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

STR2550

Abstract: STR1550
Contextual Info: STR2550 High voltage fast-switching PNP power transistor Preliminary data Features • Miniature SOT-23 plastic package for surface mounting circuits ■ Tape and reel packaging ■ The NPN complementary type is STR1550 3 2 1 Applications ■ SOT-23 LED driving

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

sa1117h

Contextual Info: SA1117 1A LDO VOLTAGE REGULATOR DESCRIPTION The SA1117 is a positive low voltage dropout regulator, voltage dropoyut is only 1.2V at 1A. SA1117 has two versions: the fixed version and the adjustable SOT-89-3L SOT-223-3L version. VOUT has a tolerance of less than 1% for fixed versions

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current

transistor R24

Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
Contextual Info: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

2SC3356

Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

1117S

Abstract: 1117s 3.3 1117s adj 1117s 5.0 1117sadj 1117H-1 1117DADJ 1117s33 SA1117 1117-D33
Contextual Info: SA1117 1A LDO 稳压器电路 概述 SA1117是一款正电压输出的低压降三端线性稳压电 路，在1A输出电流下的压降为1.2V。 SOT-223-3L SOT-89-3L SA1117分为两个版本，固定电压输出版本和可调电 压输出版本。固定输出电压1.5V1.8V、2.5V、3.3V、

marking r25 NPN

Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.

Contextual Info: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking

marking r25

Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25
Contextual Info: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

marking r25

Abstract: FJV3105R FJV4105R
Contextual Info: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking

resistor cross reference

Abstract: marking r25 sot23 FJV3105RMTF
Contextual Info: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking

2SC4226

Contextual Info: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View

2SC3356

Abstract: R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q
Contextual Info: 2SC3356 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES    SOT-23 Low Noise Amplifier at VHF, UHF and CATV band Low Noise and High Gain High Power Gain

Contextual Info: STR2550 High voltage fast-switching PNP power transistor Datasheet - production data Features • Excellent hFE linearity up to 50 mA • Miniature SOT-23 plastic package for surface mounting circuits 3 • Tape and reel packaging 2 • The NPN complementary type is STR1550

2sc4226

Abstract: NPN Silicon Epitaxial Planar Transistor 2SC4226 APPLICATION NOTES
Contextual Info: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View