SOT-223 KD Search Results

EDSD-1L8MM-REEL

Abstract: QFn 64 tape carrier
Contextual Info: TAPE AND REEL TAPE AND REEL SPECIFICATIONS—SURFACE MOUNT Tape and Reel Packing Tape and reel packing is available for all SO, TSOT thin SOT23 , SOT-23 3L/4L, SOT-223, SSOP, TSSOP, QFN, DFN and DD packages in accordance with EIA Specification 481-D with the following exceptions: (DFN(DCB), TSOT and SC70

P2T65

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P2T651T1 NPN Silicon Planar E pitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is

NPN BH RE

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon E pitaxial TVansistor M otorola Preferred Dev tee These NPN Silicon Epitaxial transistors are designed tor use in audio amplifier applications. The device is housed in the SOT-223 package, which is

KT 117A

Abstract: SMD CODE HBA
Contextual Info: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking

Contextual Info: Order this document by MC33375/D M MOTOROLA Advance Information Low Dropout 300 mA Voltage Regulator w ith ON/OFF Control The MC33375 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT-223,

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for

motorola 5118

Abstract: SOT-223 KD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7005T1 Silicon Epicap Diode Motorola Preferred Device This silicon epicap diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

pm2222a

Abstract: pm2222 pzt222a PZT2222AT1 PZT2222AT3 PZT2907AT1 QS 100 NPN Transistor MARK WAW
Contextual Info: MOTOROU Order this document by P~2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Siiicon Planar Epitmia[ Transistor PzT222aTl Motorola PrsferredDevlcs This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

2n06v

Contextual Info: SGS-THOMSON * 7 # [MOeiMillLieraeiDIgS STN2N06 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR ADVANCE DATA TYPE S TN 2N 06 V dss RDS on I dcont 60 V < 0.2 50 Q. 2 A . TYPICAL RDs(on) = 0.21 C2 . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW

Contextual Info: STN2NE06 N-CHANNEL 60V - 0.18ß - 2A - SOT-223 STripFET POWER MOSFET TYPE V dss R d S oii Id S TN 2N E06 60 V < 0.2 5 Q. 2 A • . . . . TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STN2NF06 N - CHANNEL 60V - 0.120 - 2A - SOT-223 STripFET POWER MOSFET TYP E STN2N F06 V dss 60 V R d S oii Id < 0 .1 5 Q. 2 A . . TYPICAL RDs(on) =0.12 £2 EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100 % AVALANCHE TESTED . APPLICATION ORIENTED

Contextual Info: STN3NE06 N - CHANNEL 60V - 0.08CI - 3A - SOT-223 STripFET POWER MOSFET TYP E STN 3N E06 • . . . . V dss 60 V R d S oii Id < 0 .1 0 0 Q. 3 A TYPICAL RDS(on) = 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STN4NE03L N - CHANNEL 30V - 0.037^ - 4A - SOT-223 STripFET POWER MOSFET TYP E V S TN 4N E03L dss 30 V R D S o n Id < 0 .0 5 Q. 4 A . TYPICAL Ros(on) =0.037 £2 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

FT960

Contextual Info: Order this data sheet by MMFT960T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent-M ode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as

2n10l

Abstract: n10l
Contextual Info: * 7# TYPE STN 2N 10L SGS-THOMSON [MOeiMillLieraeiDIgS S T N 2 N1 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0.5 Ç1 2 A • TYPICAL RDS(on) = 0.35 £2 . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW SOLDERED

Contextual Info: STN4NE03 N - CHANNEL 30V - 0.045ft - 4A - SOT-223 STripFET POWER MOSFET TYPE V dss R D S o n Id STN 4N E03 30 V < 0 .0 6 Q 4 A . TYPICAL R d s (oh) = 0.045 £1 m EXCEPTIO NALdv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

FAIRCHILD SOT-223 MARK

Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
Contextual Info: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.

1N10

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ransistor Medium Power Field Effect N-Channel Enhancement Mode Silicon Gate TMOS E-FET “ SOT-223 for Surface Mount M o to ro la P r e fe r re d D e v ic e M E D IU M P O W E R T M O S FET 1 AMP 100 V O LTS T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T

neas7

Contextual Info: SIEMENS Mini PROFET BSP 350 MiniPROFET • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse battery protection1 Switching inductive load

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

BSP603S2L

Contextual Info: BSP603S2L 2SWL026£ 3RZHU7UDQVLVWRU 3URGXFW 6XPPDU\ HDWXUH • 1&KDQQHO • QKDQFHPHQW PRGH • /RJLF /HYHO 9'6  9 5 '6 RQ  PΩ ,'  $ 627  • Green Product (RoHS Compliant) • AEC Qualified 7\SH %636/ 3DFNDJH 627  0D[LPXP 5DWLQJV DW 7M

Contextual Info: SIEM EN S Preliminary Data BSP 350 PROFET • • • • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Reverse battery protection Switching inductive load Clamp of negative output voltage with inductive loads

QM5HL-24

Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
Contextual Info: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer

BSP450

Abstract: GGfllb3b Q67000-S266
Contextual Info: ô23Sb05 GGfllbBti ET? SIEM EN S BSP 450 MiniSmart • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load