SOT-223 MOSFET Search Results

67A SOT 23 6

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM453NZPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223

Power MOSFET SOT-223

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM456NZPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223

CHM453NZGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM453NZGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223

CHM456NZGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM456NZGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223

CZDM1003N

Abstract: PB CZDM1003N On semiconductor date Code sot-223 100V N-Channel MOSFET
Contextual Info: Product Brief CZDM1003N 3.0A, 100V N-Channel MOSFET in the SOT-223 package SOT-223 Typical Electrical Characteristics Central Semiconductor’s CZDM1003N is a 3.0 Amp, 100 Volt N-Channel enhancement-mode MOSFET, designed for motor control, DC-DC conversion and relay driver applications. This

CHM3252ZGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM3252ZGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

N3NF06

Contextual Info: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description

N3NF06

Abstract: st MARKING E4 JESD97 STN3NF06 N-3-NF
Contextual Info: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description

N3PF06

Abstract: STN3PF06 JESD97
Contextual Info: STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on max ID STN3PF06 60 V < 0.22 Ω 2.5 A • Extremely dv/dt capability ■ 100% avalanche tested ■ 2 1 2 3 SOT-223 Application oriented characterization

NDT453N

Abstract: NDT2955 SOT223 FDT3612 FDT459N FDT439N FDT457N FQT13N06 FQT13N06L NDT452AP HUF75309T3ST
Contextual Info: Discrete MOSFET SOT-223 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-223 N-Channel NDT453N 30 Single 0.028 0.042 - - 28 8 3 FDT439N 30 Single - 0.045 0.058 - 10.7 6.3

JESD97

Abstract: N4NF03L STN4NF03L
Contextual Info: STN4NF03L N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A 2 Low threshold drive 1 Description 2 3 SOT-223 This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

Contextual Info: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223

n1nf10

Abstract: JESD97 STN1NF10
Contextual Info: STN1NF10 N-channel 100V - 0.7Ω -1A SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN1NF10 100V <0.8Ω 1A 2 Exceptional dv/dt capability 1 Description 2 3 SOT-223 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature

N1N20

Abstract: STN1N20 AM01473v1 AM01468v1
Contextual Info: STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STN1N20 200 V < 1.5 Ω 1A 2 100% avalanche tested Application ■ 1 2 3 SOT-223 Switching applications Description Using the latest high voltage MESH OVERLAY™

Contextual Info: STN1NF10 N-channel 100V - 0.7Ω -1A SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN1NF10 100V <0.8Ω 1A 2 Exceptional dv/dt capability 1 Description 2 3 SOT-223 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

Contextual Info: STN1NF20 N-channel 200 V, 1.1 Ω, 1 A SOT-223 STripFET II Power MOSFET Features Order code VDSS RDS on max ID STN1NF20 200 V < 1.5 Ω 1A • 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability 4 1 2 3 SOT-223 Applications ■ Switching applications

N1N20

Abstract: 6772 sot 223 STN1N20
Contextual Info: STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STN1N20 200 V < 1.5 Ω 1A 4 100% avalanche tested 1 Application ■ 2 3 SOT-223 Switching applications Description This device is an N-channel Power MOSFET

4NF20L

Abstract: STN4nf20 4nf20 STN4NF20L
Contextual Info: STN4NF20L N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STN4NF20L 200 V < 1.5 Ω 1A • 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability 2 1 2 3 SOT-223 Application

Contextual Info: STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STN1N20 200 V < 1.5 Ω 1A 100% avalanche tested 3 u d o 1 Application ■ ) s ( ct 4 2 r P e SOT-223 Switching applications t e l o Description

12w SOT 323

Abstract: GENERAL SEMICONDUCTOR SMD DIODES 12w sot-23 12w SOT 23
Contextual Info: Reliability Data - Operating Life Case Products SOD-80 SOD-123 SOD-323 SOD-523 SMA SMB SMC SOIC-16 SOT-23F SOT-23 SOT-26 SOT-89 SOT-143 SOT-223 SOT-323 SOT-343 SOT-363 SOT-523 SOT-563 Switching Diodes, Zener Diodes Switching, Zener & Schottky Diodes Switching, Zener & Schottky Diodes

GENERAL SEMICONDUCTOR SMD DIODES

Abstract: smd transistor yc transistor SMD yc smd transistor yc 121 zener diode t5 SMD DIODE zener SOT89 YC sot 23 T5 SOT 23
Contextual Info: Reliability Data - HTRB Life Case Products SOD-80 SOD-123 SOD-323 SOD-523 SMA SMB SMC SOIC-16 SOT-23F SOT-23 SOT-26 SOT-89 SOT-143 SOT-223 SOT-323 SOT-343 SOT-363 SOT-523 SOT-563 MELF HDDIP SM DIP DPAK D2 PAK Switching Diodes, Zener Diodes Switching, Zener & Schottky Diodes

PHP18NQ10T

Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
Contextual Info: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America

LE2V

Abstract: STN7NF10
Contextual Info: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and