SOT-23 MARKING 050 TRANSISTOR Search Results

MC33761

Abstract: MC33761 D MARKING L50 SOT23-5 BRD8011/D L30 dual diode Tape and Reel Packaging Specifications BRD8011/D l30 sot 23 Low Dropout Positive marking codes LXX 05 MC33762
Contextual Info: MC33761 Ultra Low−Noise Low Dropout Voltage Regulator with 1.0 V ON/OFF Control The MC33761 is an Low DropOut LDO regulator featuring excellent noise performances. Thanks to its innovative design, the circuit reaches an impressive 40 mVRMS noise level without an

Contextual Info: MC33761 Ultra Low−Noise Low Dropout Voltage Regulator with 1.0 V ON/OFF Control The MC33761 is an Low DropOut LDO regulator featuring excellent noise performances. Thanks to its innovative design, the circuit reaches an impressive 40 mVRMS noise level without an

RETU 3.02

Abstract: lp2981 3,3v marking loda
Contextual Info: tß Semiconductor LP2981 M icropow er SOT, 100 m A Ultra Low -D ropout Regulator General Description Features The LP2981 is a 100 mA, 1ixed-output voltage regulator de­ signed specifically to meet the requirements ot battery-powered applications. • ■

TRANSISTOR 2N338

Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Contextual Info: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.

L03A

Abstract: L04A L03B LP2981I-XX LP2981AI-XX C1996 LP2981 MA05A l05a l04b
Contextual Info: LP2981 Micropower SOT 100 mA Ultra Low-Dropout Regulator General Description Features The LP2981 is a 100 mA fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications Using an optimized VIPTM Vertically Integrated PNP process the LP2981 delivers unequaled performance in all

l01B

Abstract: l00a L00B l02B SOT L01A marking L01B L02A marking l01b regulator marking L00B L02B
Contextual Info: LP2980 Micropower SOT 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications Using an optimized VIPTM Vertically Integrated PNP process the LP2980 delivers unequaled performance in all

L19a

Abstract: 12679 L20B C1996 LP2982 MA05A LP2982AI-X
Contextual Info: LP2982 Micropower SOT 50 mA Ultra Low-Dropout Regulator General Description Features The LP2982 is a 50 mA fixed-output voltage regulator designed to provide ultra low dropout and lower noise in battery powered applications Using an optimized VIPTM Vertically Integrated PNP process the LP2982 delivers unequaled performance in all

transistor marking A9

Abstract: A9 marking diode sot23 MARKING 33A DIODE SOT23 14a 15a 16a 17a 18a 19a 20a sot23 32BX diode MARKING CODE A9 a9 sot 23 diode diode A9 sot 23 diode A9 sot23 t894
Contextual Info: APL5301/2 Low IQ, Low Dropout 300mA Fixed Voltage Regulator Features • • • • • Low Noise : 60uVRMS 100Hz to 100kHz Low Quiescent Current : 50uA (No load) Low Dropout Voltage : 400mV (VOUT(Nominal)=3.0V Version @300mA) Very low Shutdown Current : < 0.5uA

transistor bf 968

Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O

mje 1303

Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

transistor marking A9

Abstract: diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX
Contextual Info: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features APL5501 BP 5 1 2 3 V IN GND Notebook Computer PDA or Portable Equipments Noise-Sensitive Instrumentation Systems General Description IN 1 8 OU T GND 2 7 GN D GND 3 6 GN D SHDN 4 5 BY P

014e1

Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

BJT BF 331

Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

Contextual Info: MTB52N06VL Preferred Device Power MOSFET 52 Amps, 60 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

327X

Abstract: 30A sot-89 319X 14a 15a 16a 17a 18a 19a 20a sot23 Diode SOT-23 marking L5 APL5301 32BX MARKING 33A 3PIN diodes sc62 MARKING CODE MARKING CODE 10c sc-62
Contextual Info: APL5301/2 Low IQ, Low Dropout 300mA Fixed Voltage Regulator Features General Description • • The APL5301/2 series are micropower, low noise, low dropout linear regulators, which operate from 3V to 6V input voltage and deliver up to 300mA. Typical dropout voltage is only 260mV at 300mA loading. Designed for use in battery-powered system, the low 50uA

A11 MARKING SOT23-5

Contextual Info: APL5301/2 Low IQ, Low Dropout 300mA Fixed Voltage Regulator Features General Description • • The APL5301/2 series are micropower, low noise, low dropout linear regulators, which operate from 3V to 6V input voltage and deliver up to 300mA. Typical dropout voltage is only 260mV at 300mA loading. Designed for use in battery-powered system, the low 50uA

AN569

Abstract: MTB52N06VL MTB52N06VLT4 550 SOT143 Thermal Resistance to ambient SMB Case
Contextual Info: MTB52N06VL Preferred Device Power MOSFET 52 Amps, 60 Volts, Logic Level N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

0118B

Abstract: L5901 APL5901 APL5902 marking 51 "SC-62" regulator
Contextual Info: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current : < 1µA

Contextual Info: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current : < 1µA

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

196325

Abstract: LT1963-ADJ 809RL scr preregulator LT1963 LT1963EQ LT196325 lt1963-2.5 LT1963-3.3 LT1963-2
Contextual Info: LT1963 Series 1.5A, Low Noise, Fast Transient Response LDO Regulators U FEATURES DESCRIPTIO • The LT 1963 series are low dropout regulators optimized for fast transient response. The devices are capable of supplying 1.5A of output current with a dropout voltage of

Contextual Info: LT1963 Series 1.5A, Low Noise, Fast Transient Response LDO Regulators FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Optimized for Fast Transient Response Output Current: 1.5A Dropout Voltage: 340mV Low Noise: 40µVRMS 10Hz to 100kHz

LT6230-10

Abstract: LT6202 LT6230 LT6231 LT6232 LT6231C/LT6231I
Contextual Info: LT6230/LT6230-10 LT6231/LT6232 215MHz, Rail-to-Rail Output, 1.1nV/√Hz, 3.5mA Op Amp Family Features Description Low Noise Voltage: 1.1nV/√Hz n Low Supply Current: 3.5mA/Amp Max n Low Offset Voltage: 350µV Max n Gain Bandwidth Product: LT6230: 215MHz; AV ≥ 1