SOT-23 MARKING S1A Search Results

3904

Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
Contextual Info: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish

Contextual Info: 3SE D m Ô23fc.320 0 0 1 7 2 3 Ì NPN Silicon Switching Transistor SIEM ENS/ • • • SPCL-, 3 BISIP SMBT 3904 SEM ICO N D S _ High D C current gain: 0.1 to 100 mA Low collector-emltter saturation voltage Complementary type: S M B T 3906 PNP

87C654

Abstract: 80C51 83C654
Contextual Info: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontroller 87C654 DESCRIPTION PIN CONFIGURATIONS The 87C654 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and Is a derivative of the 80C51 microcontroller family. The 87C654 has the

0415C

Abstract: SB7C652-5N40
Contextual Info: Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller PIN CONFIGURATION DESCRIPTION i a K IÜI BUS The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51

SAA 1251

Abstract: saa 1291 SN40 1Ns4 87C652 1251 saa 80C51 MANUAL 80C51 ME 1117 Philips FA 291 AMPLIFIER
Contextual Info: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontroller 87C652 DESCRIPTION PIN CONFIGURATION The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The 87C652 has the

TME 87 9D

Contextual Info: Product specification Philips Semiconductors Microcontroller Products CMOS single-chip 8-bit microcontroller 870654 PIN CONFIGURATIONS DESCRIPTION The 87C654 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51

Contextual Info: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION The P83C654 Single-Chip 8-Bit M icrocontroller is m anufactured in an advanced CM OS process and is a derivative of the 80C51 m icrocontroller family. The 83C654 has the same instruction set as the

80C51 MANUAL

Abstract: 80C51 80C652 83C652 87C652 G107755
Contextual Info: Phlips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers 80C652/83C652 DESCRIPTION PIN CONFIGURATIONS The P80C652/83C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The

"marking s1a" sot-23

Abstract: 1N916 MMBT3904
Contextual Info: DATA SHEET MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) .047(1.20) • Collector current IC = 200mA • Pb free product are available : 99% Sn above can meet Rohs

Contextual Info: DATA SHEET MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 200mA • Both normal and Pb free product are available : .047(1.20)

80C51

Abstract: 80C652 83C652 s87c652-4f40 5K4-4 Q590 p80c652fba s87c652
Contextual Info: Phlips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION 80C652/83C652 PIN CONFIGURATIONS The P80C652/83C652 Single-Chip 8-Bit Microcontroller Is manufactured in an advanced CMOS process and is a derivative

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

cmos oscillator clock 16MHZ 5v

Abstract: 80C51 87C652
Contextual Info: Philips Sem iconductors M icrocontroller P roducts P roduct specification CMOS single-chip 8-bit microcontroller DESCRIPTION 87C652 PIN CONFIGURATION The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

mr852

Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Contextual Info: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

MUR420 diode

Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Contextual Info: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay