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    SOT-23 MOSFET P-CHANNEL A1 1- MARK Search Results

    SOT-23 MOSFET P-CHANNEL A1 1- MARK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MOSFET P-CHANNEL A1 1- MARK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		PDF Si2301DS O-236 OT-23) Si2301DS-T1 08-Apr-05

    Si2301DS-T1

    Abstract: SI2301DS A1 marking code
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		PDF Si2301DS O-236 OT-23) Si2301DS-T1 18-Jul-08 A1 marking code

    SI2301DS

    Abstract: Si2301DS-T1 70627
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		PDF Si2301DS O-236 OT-23) Si2301DS-T1 S-31990--Rev. 13-Oct-03 70627

    SI2301DS

    Abstract: S5135
    Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96 S5135

    BM2301

    Abstract: SI2301DS
    Text: BM2301 P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF BM2301 O-236 OT-23) Si2301DS BM2301

    SI2301DS

    Abstract: No abstract text available
    Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96

    Si2301DS

    Abstract: No abstract text available
    Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98

    Si2301DS

    Abstract: vishaysiliconix
    Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98 vishaysiliconix

    SI2301DS

    Abstract: No abstract text available
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98

    Untitled

    Abstract: No abstract text available
    Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301ADS O-236 OT-23) Si2301DS S-20221â 01-Apr-02

    marking codes transistors a1 sot-23

    Abstract: G1 SOT-23 MAX8863TEUK A114 MAX8863 MAX8863REUK MAX8863SEUK SOT-23 MOSFET P-CHANNEL a1 1- mark 5pin mosfet mark G4
    Text: MAX8863 Pin-Compatible, Low-Dropout, 120 mA Linear Regulator Delivering up to 120 mA, the MAX8863 is a fixed output, low–dropout linear regulator that operates from a +2.5 V to +6.0 V input range. The 50 µA supply current remains independent of load, making these devices ideal for battery–operated portable equipment.


    Original     		PDF MAX8863 MAX8863 r14525 MAX8863/D marking codes transistors a1 sot-23 G1 SOT-23 MAX8863TEUK A114 MAX8863REUK MAX8863SEUK SOT-23 MOSFET P-CHANNEL a1 1- mark 5pin mosfet mark G4

    marking codes transistors a1 sot-23

    Abstract: A114 MAX8863 MAX8863REUK MAX8863SEUK MAX8863TEUK G1 SOT-23
    Text: MAX8863 Pin-Compatible, Low-Dropout, 120 mA Linear Regulator Delivering up to 120 mA, the MAX8863 is a fixed output, low–dropout linear regulator that operates from a +2.5 V to +6.0 V input range. The 50 µA supply current remains independent of load, making these devices ideal for battery–operated portable equipment.


    Original     		PDF MAX8863 MAX8863 r14525 MAX8863/D marking codes transistors a1 sot-23 A114 MAX8863REUK MAX8863SEUK MAX8863TEUK G1 SOT-23

    NTR4502PT1G

    Abstract: NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G
    Text: NTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features • • • • http://onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS ON for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)


    Original     		PDF NTR4502P OT-23 OT-23 NTR4502P/D NTR4502PT1G NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G

    NTR4502

    Abstract: NVTR4502 NTR4502PT1G NVTR4502PT1G sot-23 marking 113
    Text: NTR4502P, NVTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features • • • • • http://onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS ON for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)


    Original     		PDF NTR4502P, NVTR4502P OT-23 OT-23 NTR4502P/D NTR4502 NVTR4502 NTR4502PT1G NVTR4502PT1G sot-23 marking 113

    marking code TR4 sot23

    Abstract: NTR4101P NTR4101PT1 NTR4101PT1G
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original     		PDF NTR4101P OT-23 OT-23 NTR4101P/D marking code TR4 sot23 NTR4101P NTR4101PT1 NTR4101PT1G

    marking code TR4 sot23

    Abstract: marking code tr4 SOT-23 tr4 NTR4101PT1G NTR4101PT1 NTR4101P 302 SOT-23 DIODE
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original     		PDF NTR4101P OT-23 OT-23 NTR4101P/D marking code TR4 sot23 marking code tr4 SOT-23 tr4 NTR4101PT1G NTR4101PT1 NTR4101P 302 SOT-23 DIODE

    Untitled

    Abstract: No abstract text available
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint AEC Q101 Qualified − NTRV4101P


    Original     		PDF NTR4101P, NTRV4101P NTR4101P/D

    NTR4171PT1G

    Abstract: NTR4171PT3G TRF marking sot23
    Text: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications


    Original     		PDF NTR4171P OT-23 NTR4171P/D NTR4171PT1G NTR4171PT3G TRF marking sot23

    Untitled

    Abstract: No abstract text available
    Text: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications


    Original     		PDF NTR4171P NTR4171P/D

    NTR4171PT1G

    Abstract: NTR4171PT3G TRF marking sot23
    Text: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications


    Original     		PDF NTR4171P OT-23 NTR4171P/D NTR4171PT1G NTR4171PT3G TRF marking sot23

    NTRV4101P

    Abstract: marking code tr4 sot 23 tr4 NTRV4101PT1G
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint AEC Q101 Qualified − NTRV4101P


    Original     		PDF NTR4101P, NTRV4101P OT-23 OT-23 NTR4101P/D marking code tr4 sot 23 tr4 NTRV4101PT1G

    marking code tr4

    Abstract: SOT-23 tr4 NTR4101P NTR4101PT1 NTR4101PT1G
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original     		PDF NTR4101P OT-23 OT-23 NTR4101P/D marking code tr4 SOT-23 tr4 NTR4101P NTR4101PT1 NTR4101PT1G

    marking code TR4 sot23

    Abstract: SOT-23 tr4 NTR4101P 2416w
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTR4101P, NTRV4101P OT-23 OT-23 AEC-Q101 NTR4101P/D marking code TR4 sot23 SOT-23 tr4 NTR4101P 2416w

    marking code TR4 sot23

    Abstract: sot 23 tr4
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTR4101P, NTRV4101P OT-23 OT-23 AEC-Q101 NTR4101P/D marking code TR4 sot23 sot 23 tr4