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    SOT-23 MOSFET P-CHANNEL A1 1- MARK Search Results

    SOT-23 MOSFET P-CHANNEL A1 1- MARK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    		Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    SSM3J332R
    		Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -30 V, -6 A, 0.042 Ω@-10 V, SOT-23F Visit Toshiba Electronic Devices & Storage Corporation
    SSM3J356R
    		Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -2 A, 0.3 Ω@-10 V, SOT-23F Visit Toshiba Electronic Devices & Storage Corporation
    SSM3J351R
    		Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@-10 V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MOSFET P-CHANNEL A1 1- MARK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		Si2301DS O-236 OT-23) Si2301DS-T1 08-Apr-05 PDF

    Si2301DS-T1

    Abstract: SI2301DS A1 marking code
    Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		Si2301DS O-236 OT-23) Si2301DS-T1 18-Jul-08 A1 marking code PDF

    SI2301DS

    Abstract: Si2301DS-T1 70627
    Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		Si2301DS O-236 OT-23) Si2301DS-T1 S-31990--Rev. 13-Oct-03 70627 PDF

    SI2301DS

    Abstract: S5135
    Contextual Info: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96 S5135 PDF

    BM2301

    Abstract: SI2301DS
    Contextual Info: BM2301 P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		BM2301 O-236 OT-23) Si2301DS BM2301 PDF

    SI2301DS

    Contextual Info: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96 PDF

    Si2301DS

    Contextual Info: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98 PDF

    Si2301DS

    Abstract: vishaysiliconix
    Contextual Info: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98 vishaysiliconix PDF

    SI2301DS

    Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98 PDF

    Contextual Info: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2301ADS O-236 OT-23) Si2301DS S-20221â 01-Apr-02 PDF

    marking codes transistors a1 sot-23

    Abstract: G1 SOT-23 MAX8863TEUK A114 MAX8863 MAX8863REUK MAX8863SEUK SOT-23 MOSFET P-CHANNEL a1 1- mark 5pin mosfet mark G4
    Contextual Info: MAX8863 Pin-Compatible, Low-Dropout, 120 mA Linear Regulator Delivering up to 120 mA, the MAX8863 is a fixed output, low–dropout linear regulator that operates from a +2.5 V to +6.0 V input range. The 50 µA supply current remains independent of load, making these devices ideal for battery–operated portable equipment.


    Original     		MAX8863 MAX8863 r14525 MAX8863/D marking codes transistors a1 sot-23 G1 SOT-23 MAX8863TEUK A114 MAX8863REUK MAX8863SEUK SOT-23 MOSFET P-CHANNEL a1 1- mark 5pin mosfet mark G4 PDF

    marking codes transistors a1 sot-23

    Abstract: A114 MAX8863 MAX8863REUK MAX8863SEUK MAX8863TEUK G1 SOT-23
    Contextual Info: MAX8863 Pin-Compatible, Low-Dropout, 120 mA Linear Regulator Delivering up to 120 mA, the MAX8863 is a fixed output, low–dropout linear regulator that operates from a +2.5 V to +6.0 V input range. The 50 µA supply current remains independent of load, making these devices ideal for battery–operated portable equipment.


    Original     		MAX8863 MAX8863 r14525 MAX8863/D marking codes transistors a1 sot-23 A114 MAX8863REUK MAX8863SEUK MAX8863TEUK G1 SOT-23 PDF

    NTR4502PT1G

    Abstract: NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G
    Contextual Info: NTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features • • • • http://onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS ON for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)


    Original     		NTR4502P OT-23 OT-23 NTR4502P/D NTR4502PT1G NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G PDF

    NTR4502

    Abstract: NVTR4502 NTR4502PT1G NVTR4502PT1G sot-23 marking 113
    Contextual Info: NTR4502P, NVTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features • • • • • http://onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS ON for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)


    Original     		NTR4502P, NVTR4502P OT-23 OT-23 NTR4502P/D NTR4502 NVTR4502 NTR4502PT1G NVTR4502PT1G sot-23 marking 113 PDF

    marking code TR4 sot23

    Abstract: NTR4101P NTR4101PT1 NTR4101PT1G
    Contextual Info: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original     		NTR4101P OT-23 OT-23 NTR4101P/D marking code TR4 sot23 NTR4101P NTR4101PT1 NTR4101PT1G PDF

    marking code TR4 sot23

    Abstract: marking code tr4 SOT-23 tr4 NTR4101PT1G NTR4101PT1 NTR4101P 302 SOT-23 DIODE
    Contextual Info: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original     		NTR4101P OT-23 OT-23 NTR4101P/D marking code TR4 sot23 marking code tr4 SOT-23 tr4 NTR4101PT1G NTR4101PT1 NTR4101P 302 SOT-23 DIODE PDF

    Contextual Info: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint AEC Q101 Qualified − NTRV4101P


    Original     		NTR4101P, NTRV4101P NTR4101P/D PDF

    NTR4171PT1G

    Abstract: NTR4171PT3G TRF marking sot23
    Contextual Info: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications


    Original     		NTR4171P OT-23 NTR4171P/D NTR4171PT1G NTR4171PT3G TRF marking sot23 PDF

    Contextual Info: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications


    Original     		NTR4171P NTR4171P/D PDF

    NTR4171PT1G

    Abstract: NTR4171PT3G TRF marking sot23
    Contextual Info: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications


    Original     		NTR4171P OT-23 NTR4171P/D NTR4171PT1G NTR4171PT3G TRF marking sot23 PDF

    NTRV4101P

    Abstract: marking code tr4 sot 23 tr4 NTRV4101PT1G
    Contextual Info: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint AEC Q101 Qualified − NTRV4101P


    Original     		NTR4101P, NTRV4101P OT-23 OT-23 NTR4101P/D marking code tr4 sot 23 tr4 NTRV4101PT1G PDF

    marking code tr4

    Abstract: SOT-23 tr4 NTR4101P NTR4101PT1 NTR4101PT1G
    Contextual Info: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original     		NTR4101P OT-23 OT-23 NTR4101P/D marking code tr4 SOT-23 tr4 NTR4101P NTR4101PT1 NTR4101PT1G PDF

    marking code TR4 sot23

    Abstract: SOT-23 tr4 NTR4101P 2416w
    Contextual Info: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring


    Original     		NTR4101P, NTRV4101P OT-23 OT-23 AEC-Q101 NTR4101P/D marking code TR4 sot23 SOT-23 tr4 NTR4101P 2416w PDF

    marking code TR4 sot23

    Abstract: sot 23 tr4
    Contextual Info: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring


    Original     		NTR4101P, NTRV4101P OT-23 OT-23 AEC-Q101 NTR4101P/D marking code TR4 sot23 sot 23 tr4 PDF