SOT-23 SINGLE DIODE MARK PD Search Results

ln2312

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

LN2312LT1G

Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

sot-23 single diode mark PD

Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

LP4101LT1G

Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

LP2301LT1G

Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

SC-75

Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit

marking code C4 Sot 23-5

Abstract: EIAJ-SC74A sot23-5 marking code LDC MAX828 Marking C4 SOT23-5 INVERTER 10kW sot 23-5 mark c2 marking code AC sot 23-5 1N4148 1N5817
Contextual Info: MAX828 MAX829 Switched Capacitor Voltage Converters The MAX828/829 are CMOS “charge–pump” voltage converters in ultra–small SOT–23 5 lead packages. They invert and/or double an input voltage which can range from +1.5V to +5.5V. Conversion efficiency is typically >95%. Switching frequency is 12kHz for the

7s14

Abstract: a25 sot23-5 national semiconductor databook mark a7 sot23 mark a7 sot23 DIODE SOT23-5 VH 12135 NC7S14 NC7S14M5 NC7S14M5X
Contextual Info: NC7S14 Tiny Inverter with Schmitt Trigger Input General Description Features The NC7S14 is a single high performance CMOS Inverter with Schmitt Trigger input in National’s TinyPakTM package The circuit design provides hysteresis between the positivegoing and negative going input thresholds thereby improving noise margins

LP2307LT1G

Abstract: LP2307
Contextual Info: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4A = 60mΩ RDS(ON), Vgs@-2.5V, Ids@-3A = 70 mΩ LP2307LT1G 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance

Unitrode Semiconductor

Contextual Info: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W

UM7108

Abstract: MICROWAVE DIODE CORP UM7006 UM7000 UM7001 UM7002 UM7100 UM7101 UM7102 UM7200
Contextual Info: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

MAX4242

Contextual Info: 19-1343; Rev 3; 9/06 Single/Dual/Quad, +1.8V/10µA, SOT23, Beyond-the-Rails Op Amps The MAX4240–MAX4244 family of micropower op amps operate from a single +1.8V to +5.5V supply or dual ±0.9V to ±2.75V supplies and have Beyond-the-Rails inputs and rail-to-rail output capabilities. These amplifiers provide a 90kHz gain-bandwidth product while

MC145406

Abstract: motorola c520 CDA 6.0 MC TX 2E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C I45406 Driver/Receiver EIA-232-E and CCITT V.28 Formerly RS-232-D The MC145406 is a silicon-gate CMOS IC that combines three drivers and three receivers to fulfill the electrical specifications of standards E IA -2 3 2 -E and C C IT T V.28. The d riv e rs fe a tu re tru e T TL in p u t

NTR 606

Contextual Info: January 1999 S E M IC O N D U C T O R NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: MB91550 Series 32-bit Microcontroller FR Family FR81S MB91F552 Data Sheet Full Production Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume

465Z

Abstract: mts 300
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1854A I2C BUS-COMPATIBLE US MTS PROCESSING LSI The µPC1854A is an integrated circuit for US MTS Multichannel Television Sound system with the addition of the I2C bus interface. All functions required for US MTS system are incorporated on a single chip.

TEF110-95F136MB

Abstract: MB95130MB MB95136MB MB95F136MBWPFV F136MBS
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12621-1E 8-bit Microcontrollers CMOS F2MC-8FX MB95130MB Series / /

MB95F134JBS

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-12621-1Ea 8-bit Microcontrollers CMOS F2MC-8FX MB95130MB Series / /

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12612-1E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95130M Series / • DESCRIPTION The MB95130M series is general-purpose, single-chip microcontrollers. In addition to a compact instruction set,

L0910

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12612-2E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95130M Series / • DESCRIPTION The MB95130M series is general-purpose, single-chip microcontrollers. In addition to a compact instruction set,

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid