SOT-23-6 MARKING 1A Search Results

MARKING CODE DG SOT 23

Abstract: TP2106N3
Contextual Info: TP2106 inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / R[>S ON ^ G S flh ) B V Dg s (max) (max) -60V 6£i -2.0V Order Number/Package SOT-231 TO-92 TP2106K1 TP2106N3 Product marking for SOT-23: P1L*

On semiconductor date Code sot-23

Abstract: sot-23 body marking C 1 sot-23 body marking A 4 BC847BLT1G MARKING A1 SOT-23 SOT-23 marking 2F sot-23 body marking A c marking code SOT-23 2F Code sot-23 on semiconductor MARKING 1L SOT-23
Contextual Info: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • COLLECTOR 3 ESD Rating − Machine Model: >400 V Pb−Free Packages are Available

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

transistor 1f sot-23

Abstract: transistor 2F to-236 BC847 sot package sot-23 transistors sot-23 "Marking code 26" sot-23 body marking A 4 marking codes transistors a1 sot-23 marking codes transistors sot-23 MARKING bc847 SOT-23 BC850CLT1G BC847BLT1G
Contextual Info: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • COLLECTOR 3 ESD Rating − Machine Model: >400 V

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

Contextual Info: LM2734 www.ti.com SNVS288I – SEPTEMBER 2004 – REVISED APRIIL 2013 LM2734 Thin SOT 1A Load Step-Down DC-DC Regulator Check for Samples: LM2734 FEATURES DESCRIPTION • • • • • The LM2734 regulator is a monolithic, high frequency, PWM step-down DC/DC converter in a 6-pin Thin

V = Device Code

Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

marking CODE W2D

Abstract: marking w2d
Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

V = Device Code

Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS

V = Device Code

Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

diode Marking code v3

Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.

Wafer Fab Plant Codes ST

Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

V = Device Code

Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
Contextual Info: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

V = Device Code

Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
Contextual Info: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

PC 74 HCT 32 P

Abstract: U-046 V = Device Code
Contextual Info: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low

V = Device Code

Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
Contextual Info: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky

MC74HC

Abstract: marking t132 marking code V6 diode V = Device Code
Contextual Info: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

marking H5 sot 23-5

Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
Contextual Info: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
Contextual Info: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

AND8004/D

Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
Contextual Info: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

t08 sot-23

Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
Contextual Info: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

T138A

Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
Contextual Info: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

SOT23 "Marking Code" t04

Abstract: marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode
Contextual Info: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power