SOT-23-6 MARKING K Search Results

KMA3D0N20SA

Abstract: SOT23 marking j1 marking A1 6 H8 SOT-23
Contextual Info: SEMICONDUCTOR KMA3D0N20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KNC 0 6 2. Marking 2 Item Marking Description Device Mark KNC KMA3D0N20SA - - - * Lot No. 06 2006. 06 Week [0:1st Character, 6:2nd Character] Note * Lot No. marking method

sot-23 MARK KND

Abstract: marking 5B KMB2D0N60SA marking H8 SOT-23 SOT23 MARKING 5B sot-23 MARK e5 marking 5b sot23
Contextual Info: SEMICONDUCTOR KMB2D0N60SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KND 0 6 2. Marking 2 Item Marking Description Device Mark KND KMB2D0N60SA - - - * Lot No. 06 2006. 06 Week [0:1st Character, 6:2nd Character] Note * Lot No. marking method

CS3121

Contextual Info: CS3121 Revision History Rev. No. History Issue Date 1.0 New issue Sep. 10,2012 Add Current Limit=300mA Min. Delete TSOT-23-6 Package 1.1 Add TDFN-6 and SOT-23-6 Package May. 13,2013 Modify Ordering information and Marking information Add ESD Rating

SAS SOT23

Abstract: SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG
Contextual Info: BSS 100 BSS 123 SIPMOS Small-Signal Transistors lD - 100 V = 0 .2 2 /0 .1 7 A ^ D S o n = »os 6 -0 TO -92 (BSS 100) SOT-23 (BSS 123) £3 • N channel • Enhancem ent mode • Packages: TO-92, D SOT-23 ’ ) Type Marking Ordering code for version on

Contextual Info: EDB Schottky Diode ESD Suppressor Package SOT – 23-6 Schematic: 4 3 5 2 6 1 Marking “ EDB “ Characteristics: ( Ta = 25oC ) Symbol Characteristic VBD Diode Brakdown Voltage IL Leakage current CT Capacitance VESD Channel clamp voltage VPV Peak ESD voltage capability

Contextual Info: SMBD 6050 Silicon Switching Diode For high-speed switching applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8-m m tape Package SMBD 6 0 5 0 S5A upon request upon request SOT 23 M axim um ratings Param eter Symbol Reverse voltage

marking sSH sot-23

Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information

SMBD6100C

Contextual Info: Silicon Switching Diode Array SMBD 6100 • For high-speed sw itching applications • Comm on cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8-mm tape Package SM B D 6 1 0 0 S5B upon request upon request SOT 23 Maximum ratings

TP0610K-T1-E

Abstract: TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

VISHAY SOT LOT CODE

Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

marking sSH sot-23

Abstract: E6327 Q67000-S007 marking 119 marking BSs
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

SAs SOT-23 marking

Abstract: marking BSs SAS SOT23 transistor 45 f 123 marking "BSs" E6327 Q62702-S512 Q67000-S245 bss 108 marking SAs SOT23
Contextual Info: BSS 123 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6Ω SOT-23 SAs Type BSS 123 BSS 123 Ordering Code Q62702-S512

Q67000-S007

Abstract: E6327 marking BSs marking sSH sot-23
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

Q67000-S007

Abstract: bss 108 E6327 SOT23 marking GF marking BSs BSS119
Contextual Info: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information

transistor BR A 94

Abstract: E6327 Q62702-S512 Q67000-S245 marking BSs SAs SOT-23 marking
Contextual Info: BSS 123 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6Ω SOT-23 SAs Type BSS 123 BSS 123 Ordering Code Q62702-S512

Contextual Info: BAW56 Silicon Epitaxial Planar Diode F ast sw itc h in g d u al d io d e w ith c o m m o n anode. U.fl Top View Marking JD - - □ 1-N.I 1 Top View — + ; + S3 3.4 i 6 1 — a.45*0-1 SOT-23 Plastic Package W eig h t a p p ro x . 0 .0 0 8 g

e06 marking

Abstract: BF56 a0335 F820S irf 2117
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSEOD^b OOOTMn BF 820 S *BF 822 S ■¡riU ilFM KIM electronic CreatM Ted>noido«s T - 21-17 Silicon NPN Epitaxial Planar Transistors Applications: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power

c 2579 power transistor

Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Contextual Info: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

ALG TRANSISTOR

Abstract: transistor PNP ALG transistor BC 368
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔTSQQTb DOQ'ÎBfl? 7 IÂLG6 BC 369 m ilFW K IM electronic CreativeTechnokjgm _ r - a i- a a Silicon PNP Epitaxial Planar Transistor Applications: Complementary audio amplifier, driver and output stages for low supply voltage

transistor BF 164

Abstract: buv 47 i L61A
Contextual Info: «I TELEFUNKEN ELECTRONIC 17E D WÊ Ô^SOO^fc. QDQTSM? 3 BUV 47 • BUV 47 A m iitPW K iN l electronic CrM lfW Tschnotog*«* T - 3 V 13 Silicon NPN Power Transistors Applications: Switching mods power supply, inverters, motor control and relay driver Features:

transistor BC 245

Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time

transistor BC 575

Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
Contextual Info: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB