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    SOT-25 MARKING AF Search Results

    SOT-25 MARKING AF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-25 MARKING AF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSP324

    Abstract: E6327 Q67000-S215
    Text: Rev. 1.0 SIPMOS  Power-Transistor BSP324 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 400 V 25 Ω 0.17 A SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP324 SOT-223 Q67000-S215


    Original     		PDF BSP324 OT-223 Q67000-S215 E6327: BSP324 E6327 Q67000-S215

    MARKING CODE G3

    Abstract: AF MARKING CODE marking AF marking AF SOT marking G3
    Text: MMBTBC337-40 NPN Silicon Epitaxial Planar Transistor for switching, AF driver and amplifier application, especially suited for automatic insertion in thick and thin-film circuits. Marking Code: “G3” SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBTBC337-40 OT-23 500mA, 300mA 50MHz MARKING CODE G3 AF MARKING CODE marking AF marking AF SOT marking G3

    2N603L

    Abstract: Q67060-S7213 BSP603S2L
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 33 mΩ ID 5.2 A SOT 223 Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L

    2N615L

    Abstract: Q67060-S7211 BSP615S2L
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2003-10-2y 2N615L Q67060-S7211 BSP615S2L

    2N615L

    Abstract: 55B5 BSP615S2L 2N615
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2N615L 55B5 BSP615S2L 2N615

    2N603L

    Abstract: Q67060-S7213 BSP603S2L d52a
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L d52a

    2tk transistor

    Abstract: No abstract text available
    Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4403K MMBT4403K OT-23 2tk transistor

    2FK transistor

    Abstract: No abstract text available
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23

    SOT-23 2xk

    Abstract: 2xk transistor npn
    Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4401K MMBT4401K OT-23 SOT-23 2xk 2xk transistor npn

    marking SH SOT23 mosfet

    Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5
    Text: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501


    Original     		PDF DMN5501/DMZ5501 200mA DMN5501 DMZ5501 OT-23 74tten marking SH SOT23 mosfet DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5

    2FK transistor

    Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor

    transistor 1AK

    Abstract: 1AK marking transistor MMBT3904K 1ak transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23 transistor 1AK 1AK marking transistor 1ak transistor

    smd marking code sot-23 infineon

    Abstract: SM 226 6V
    Text: BSS670S2L OptiMOS Power-Transistor Product Summary Feature 55 VDS  N-Channel  Enhancement mode  Logic Level V RDS on 650 m ID 0.54 A SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L SOT 23 Q67042-S4052 BSs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSS670S2L BSS670S2L Q67042-S4052 smd marking code sot-23 infineon SM 226 6V

    Untitled

    Abstract: No abstract text available
    Text: BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 30 V


    Original     		PDF BCX20 OT-23

    fairchild sot-23 Device Marking 2xk

    Abstract: MMBT4401K
    Text: MMBT4401K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage


    Original     		PDF MMBT4401K OT-23 MMBT4401K fairchild sot-23 Device Marking 2xk

    5463003

    Abstract: 54630 SB29003 sot223 device Marking
    Text: SB29003 High Voltage Transistor SB29003 High Voltage Transistor 1 SOT-223 Marking: 5463003 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage


    Original     		PDF SB29003 SB29003 OT-223 5463003 54630 sot223 device Marking

    Untitled

    Abstract: No abstract text available
    Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3904 OT-23

    Untitled

    Abstract: No abstract text available
    Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3904 OT-23

    MARKING 1PK

    Abstract: 1PK transistor MMBT2222AK fairchild sot-23 Device Marking pc
    Text: MMBT2222AK NPN Epitaxial Silicon Transistor MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT2222AK MMBT2222AK OT-23 MARKING 1PK 1PK transistor fairchild sot-23 Device Marking pc

    Untitled

    Abstract: No abstract text available
    Text: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 2 1 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage


    Original     		PDF BAT54SWT1G/BAT54CWT1G BAT54SWT1G BAT54CWT1G OT-323 BAT54SWT1G/BAT54CWT1G

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT3906K MMBT3906K OT-23

    5463003

    Abstract: sot223 device Marking SB29003
    Text: SB29003 High Voltage Transistor SB29003 High Voltage Transistor 1 SOT-223 Marking: 5463003 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage


    Original     		PDF SB29003 SB29003 OT-223 5463003 sot223 device Marking

    BAT54CWT1G

    Abstract: BAT54SWT1G
    Text: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage


    Original     		PDF BAT54SWT1G/BAT54CWT1G BAT54SWT1G BAT54CWT1G OT-323 BAT54SWT1G/BAT54CWT1G BAT54CWT1G BAT54SWT1G